1
Edition 1.1
August 2004
FHX76LP
Super Low Noise HEMT
DESCRIPTION
The FHX76LP is a low noise SuperHEMT
TM
product designed for DBS
applications. This device uses a small ceramic package that is optimized
for high volume cost driven requirements.
Eudyna's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
Low Noise Figure: NF=0.40dB (Typ.)@f=12GHz
High Associated Gain: Gas=13.5dB (Typ.)@f=12GHz
High Reliability
Small Size SMT Package
Tape and Reel Packaging Available
Parameter
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
V
mW
C
C
VGS
Pt
TSTG
TCH
VDS
Rating
Condition
Unit
3.5
-3.0
180
Note
-65 to 150
150
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25
C)
Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with
gate resistance of 4000
.
3. The operating channel temperature (Tch) should not exceed 80C.
Item
Saturated Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Noise Figure
Associated Gain
Symbol
I
DSS
V
GSO
35
50
-
10
30
60
-0.1
-0.7
-1.5
-3.0
-
-
-
0.40
0.50
12.0
13.5
-
V
DS
= 2V, V
GS
=0V
V
DS
= 2V, I
DS
=10mA
V
DS
= 2V, I
DS
=1mA
I
GS
= -10
A
V
DS
= 2V,
I
DS
= 10mA,
f=12GHz
mA
mS
V
dB
dB
V
gm
V
p
NF
G
as
Conditions
Unit
Limits
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
C)
Note: RF parameters for LP devices are measured on a sample basis as follows:
Lot qty.
Sample qty.
Accept/Reject
1200
or
less
125
(0,1)
1201
to
3200
200
(0,1)
3201
to
10000
315
(1,2)
10001
or
over
500
(1,2)
CASE STYLES: LP
Channel to Case
Thermal Resistance
-
300
400
C/W
Rth
3
FHX76LP
Super Low Noise HEMT
opt
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
50
25
10
100
250
TYPICAL NOISE FIGURE CIRCLE
f=12GHz
VDS=2V
IDS=10mA
opt=0.32153.8
Rn/50=0.06
NFmin=0.40dB
Freq.
(GHz)
(MAG)
(ANG)
NFmin
(dB)
Rn/50
opt
2
4
6
8
10
12
14
16
18
20
0.79
0.62
0.50
0.41
0.35
0.32
0.30
0.29
0.29
0.29
12.5
30.0
54.1
83.6
117.3
153.8
-168.0
-129.5
-91.8
-56.3
0.28
0.29
0.30
0.32
0.35
0.40
0.48
0.60
0.72
0.91
.24
.20
.16
.12
.08
.06
.06
.09
.14
.19
NOISE PARAMETERS
VDS=2V, IDS=10MA
Ga(max) AND |S21| vs. FREQUENCY
25
20
15
10
5
0
4
6
8 10 12
20
Frequency (GHz)
Gain (dB)
VDS=2V
IDS=10mA
|S21|
2
Ga(max)
1.0
1.5
2.0
3.0dB
0.5
4
S-PARAMETERS
VDS = 2V, IDS = 10mA
FREQUENCY
S11
S21
S12
S22
(MHZ)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
1000
.987
-14.8
5.535
164.2
.014
80.2
.585
-11.4
2000
.965
-29.4
5.463
148.8
.027
70.2
.567
-22.9
3000
.925
-44.6
5.334
133.2
.041
57.7
.538
-34.7
4000
.878
-58.3
5.154
118.8
.049
50.0
.511
-45.2
5000
.828
-72.9
5.019
104.3
.059
40.6
.480
-56.4
6000
.776
-87.8
4.825
89.8
.067
32.4
.446
-68.4
7000
.719
-102.8
4.606
75.6
.075
23.2
.413
-80.6
8000
.669
-116.6
4.354
61.9
.079
15.2
.394
-92.6
9000
.631
-129.4
4.130
49.5
.083
6.3
.374
-102.4
10000
.590
-141.7
3.982
37.0
.086
.2
.365
-112.5
11000
.548
-155.3
3.849
24.7
.088
-7.6
.335
-121.9
12000
.507
-169.6
3.689
12.4
.091
-14.2
.323
-134.1
13000
.482
177.0
3.545
-.2
.095
-20.8
.313
-145.0
14000
.459
164.7
3.425
-11.9
.096
-28.7
.315
-155.9
15000
.439
152.3
3.330
-24.4
.098
-36.4
.324
-165.4
16000
.419
138.7
3.264
-37.1
.102
-44.1
.322
-174.3
17000
.404
123.9
3.238
-50.3
.103
-54.6
.321
175.4
18000
.383
107.3
3.176
-63.5
.108
-63.4
.316
165.3
19000
.377
93.2
3.101
-78.0
.105
-74.5
.320
153.2
20000
.348
76.5
3.028
-92.3
.110
-87.6
.301
146.1
NOTE:*
The data includes bonding wires.
n: number of wires
Gate
n=1 (0.1mm length, 25m Dia Au wire)
Drain n=1 (0.1mm length, 25m Dia Au wire)
Source n=4 (0.2mm length, 25m Dia Au wire)
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
1
2
3
4
Drain-Source Voltage (V)
40
30
20
0
10
Drain Current (mA)
VGS =0V
-0.2V
-0.4V
-0.6V
-0.8V
POWER DERATING CURVE
100
150
50
200
0
0
50
100
150
200
Ambient Temperature (
C)
Total Power Dissipation (mW)
FHX76LP
Super Low Noise HEMT
5
1.78+0.15
(0.07)
(0.039)
(0.07)
1.78
0.15
1.3 Max
(0.051)
0.1
(0.004)
1.5 0.5
(0.059)
1.5 0.5
(0.059)
1
2
3
0.5
(0.02)
1.0 Min
1: Gate
2: Source (Flange)
3: Drain
4: Source (Flange)
Unit: mm (Inches)
Case Style "LP"
Metal-Ceramic Package
1.78
0.15
(0.07)
1.5
0.5
(0.059)
1.5
0.5
(0.059)
4.78
0.5
(0.188)
1.78+0.15
(0.07)
4.78
0.5
(0.188)
4
FHX76LP
Super Low Noise HEMT
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put this product into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
2004 Eudyna Devices USA Inc.
Printed in U.S.A.
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