1
Edition 1.3
July 1999
FLC157XP
GaAs FET & HEMT Chips
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
Output Power at 1dB
Gain Compression Point
Power Gain at 1dB
Gain Compression Point
Symbol
IDSS
-
600
900
150
300
-
-1.0
-2.0
-3.5
-5
-
-
5.0
6.0
-
-
29.5
-
30.5
31.5
-
VDS = 5V, IDS = 30mA
VDS = 5V, IDS = 400mA
VDS = 5V, VGS = 0V
IGS = -30A
VDS = 10V
IDS 0.6IDSS
f = 8GHz
mA
mS
V
dB
%
dBm
V
gm
Vp
VGSO
P1dB
G1dB
add
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
Channel to Case
-
15
18
C/W
Thermal Resistance
Rth
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
DESCRIPTION
The FLC157XP chip is a power GaAs FET that is designed for
general purpose applications in the C-Band frequency range as it
provides superior power, gain, and efficiency.
Fujitsu's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
Gate
Drain
Drain
Gate
Source
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
8.3
-65 to +175
175
Tc = 25C
V
V
W
C
C
Ptot
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 9.6 and -1.0 mA respectively with
gate resistance of 200.
3. The operating channel temperature (Tch) should not exceed 145C.
FEATURES
High Output Power: P1dB = 31.5dBm (Typ.)
High Gain: G1dB = 6.0dB(Typ.)
High PAE: add = 29.5%(Typ.)
Proven Reliability
2
FLC157XP
GaAs FET & HEMT Chips
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
6
8
10
4
2
0
50
100
150
200
2
4
6
8
10
Case Temperature (C)
Drain-Source Voltage (V)
Total Power Dissipation (W)
600
400
200
Drain Current (mA)
VGS =0V
-0.5V
-1.5V
-2.0V
-1.0V
OUTPUT POWER vs. INPUT POWER
P1dB & add vs. VDS
VDS=10V
IDS0.6IDSS
f=8GHz
IDS0.6IDSS
f=4GHz
f=4GHz
8GHz
8GHz
add
Pout
add
P1dB
30
32
26
15 17
20
19
22
21
24
30
20
10
23 25
27
28
Input Power (dBm)
Output Power (dBm)
33
34
31
8
9
10
30
32
Drain-Source Voltage (V)
P
1dB
(dbm)
add (%)
30
20
10
add (%)
3
FLC157XP
GaAs FET & HEMT Chips
S-PARAMETERS
VDS = 10V, IDS = 400mA
FREQUENCY
S11
S21
S12
S22
(MHZ)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
.993
-25.9
15.864
165.0
.013
76.4
.185
-39.7
500
.918
-98.4
10.322
123.1
.041
40.2
.293
-115.6
1000
.881
-134.6
6.162
100.0
.049
24.2
.337
-139.9
2000
.868
-159.5
3.250
77.3
.051
15.8
.375
-150.6
3000
.868
-169.8
2.178
61.7
.051
14.8
.413
-152.6
4000
.871
-176.3
1.625
48.3
.050
16.3
.456
-153.5
5000
.875
178.9
1.284
36.0
.050
19.3
.503
-154.9
6000
.881
174.8
1.051
24.6
.050
23.3
.550
-156.8
7000
.886
171.2
.878
13.8
.052
27.9
.597
-159.3
8000
.892
167.8
.743
3.7
.054
32.5
.641
-162.2
9000
.897
164.6
.633
-5.8
.057
36.7
.682
-165.4
10000
.903
161.5
.541
-14.6
.061
40.2
.720
-168.7
11000
.907
158.4
.462
-22.9
.067
42.8
.753
-172.1
12000
.912
155.5
.393
-30.5
.072
44.6
.783
-175.6
NOTE:*
The data includes bonding wires.
n: number of wires
Gate
n=2 (0.3mm length, 25m Dia Au wire)
Drain n=2 (0.3mm length, 25m Dia Au wire)
Source n=4 (0.3mm length, 25m Dia Au wire)
Download S-Parameters, click here
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
4
CHIP OUTLINE
(Unit: m)
Source electrodes are electrically
insulated from the bottom of the
chip (PHS)
Die Thickness: 6020m
610
30
500
155
60
106030
70
65
170
Gate
950
270
50
Drain
Drain
Gate
Source
FLC157XP
GaAs FET & HEMT Chips
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