1
Edition 1.1
July 1999
FLK027WG
X, Ku Band Power GaAs FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
1.875
-65 to +175
175
Tc = 25C
V
V
W
C
C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 2.2 and -0.1 mA respectively with
gate resistance of 2000.
3. The operating channel temperature (Tch) should not exceed 145C.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
-
100
150
-
50
-
-1.0
-2.0
-3.5
-5
-
-
6.0
7.0
-
-
32
-
23.0
24.0
-
VDS = 5V, IDS = 5mA
VDS = 5V, IDS = 65mA
VDS = 5V, VGS = 0V
IGS = -5A
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 14.5 GHz
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 12 GHz
mA
mS
V
dB
%
dBm
V
gm
Vp
VGSO
P1dB
G1dB
add
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
Power-added Efficiency
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
-
8
-
-
34
-
-
24
-
dB
%
dBm
P1dB
G1dB
add
Channel to Case
Thermal Resistance
-
40
80
C/W
Rth
G.C.P.: Gain Compression Point
CASE STYLE: WG
DESCRIPTION
The FLK027WG is a power GaAs FET that is designed for general
purpose applications in the Ku-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
High Output Power: P1dB = 24.0dBm(Typ.)
High Gain: G1dB = 7.0dB(Typ.)
High PAE: add = 32%(Typ.)
Proven Reliability
Hermetic Metal/Ceramic Package
2
FLK027WG
X, Ku Band Power GaAs FET
-1.5V
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
1
2
0
50
100
150
200
2
0
4
6
8
10
Case Temperature (C)
Drain-Source Voltage (V)
Total Power Dissipation (W)
75
25
50
100
Drain Current (mA)
VGS =0V
-0.5V
-2.0V
-1.0V
OUTPUT POWER vs. INPUT POWER
7
9 11 13 15 17
Input Power (dBm)
24
22
20
18
16
14
40
20
Output Power (dBm)
add
Pout
add
(%)
add
(%)
P1dB & add vs. VDS
f = 14.5 GHz
IDS 0.6 IDSS
8
9
10
Drain-Source Voltage (V)
25
24
22
20
23
21
20
30
40
10
P
1dB
(dBm)
add
P1dB
f = 14.5GHz
IDS 0.6 IDSS
VDS=10V
VDS=8.5V
3
FLK027WG
X, Ku Band Power GaAs FET
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180
+90
0
-90
S21
S12
SCALE FOR |S
12
|
15
15
14
14
12
12
13
13
11
11
9
9
250
100
10
25
50
SCALE FOR |S21|
8GHz
8GHz
16GHz
16GHz
10
10
1
2
3
4
15
15
14
14
12
12
13
13
11
11
9
9
8GHz
8GHz
16GHz
16GHz
10
10
0.1
0.2
S-PARAMETERS
VDS = 10V, IDS = 60mA
FREQUENCY
S11
S21
S12
S22
(MHZ)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
500
.985
-31.8
4.381
156.3
.011
67.8
.758
-13.7
1000
.965
-60.1
3.965
134.7
.021
48.5
.748
-27.2
8000
.819
165.4
1.204
-8.3
.041
-54.3
.825
-123.9
8500
.804
159.8
1.177
-16.6
.043
-56.1
.832
-130.0
9000
.787
155.0
1.161
-24.5
.046
-58.6
.838
-135.6
9500
.766
150.1
1.164
-32.1
.049
-61.0
.842
-140.2
10000
.735
144.2
1.197
-40.4
.053
-63.6
.853
-144.8
10500
.689
137.4
1.248
-49.7
.058
-68.7
.864
-149.6
11000
.623
128.7
1.309
-60.3
.065
-74.0
.871
-155.0
11500
.534
118.5
1.364
-72.9
.072
-81.9
.878
-161.4
12000
.423
106.5
1.407
-86.4
.078
-90.5
.885
-167.8
12500
.290
93.9
1.413
-101.2
.082
-101.5
.886
-174.6
13000
.139
82.0
1.380
-116.8
.083
-112.3
.882
178.7
13500
.036
-123.8
1.304
-133.2
.080
-123.7
.875
173.0
14000
.223
-131.8
1.190
-149.4
.075
-136.1
.861
169.2
14500
.395
-144.2
1.041
-164.5
.068
-145.6
.849
167.8
15000
.542
-155.7
.893
-177.4
.061
-152.8
.842
167.4
15500
.652
-164.2
.757
172.1
.054
-156.1
.832
167.6
16000
.734
-170.9
.655
163.3
.052
-160.8
.829
167.3
Download S-Parameters, click here
4
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
FLK027WG
X, Ku Band Power GaAs FET
2-1.60.01
(0.063)
0.5
(0.020)
6.10.1
(0.240)
1.0 Min.
(0.039)
1.0 Min.
(0.039)
0.03
0.6
2.5
0.15
(0.098)
Case Style "WG"
Metal-Ceramic Hermetic Package
Unit: mm(inches)
1. Gate
2. Source
3. Drain
4. Source
1
2
3
8.50.2
(0.335)
2.8
(0.11)
0.80.1
(0.031)
0.10.05
(0.004)
2.5 Max.
(0.098)
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