1
Edition 1.1
July 1999
FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
83.3
-65 to +175
175
Tc = 25C
V
V
W
C
C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 53.6 and -11.6 mA respectively with
gate resistance of 25.
3. The operating channel temperature (Tch) should not exceed 145C.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Drain Current
Output Power
at 1dB G.C.P.
Power Gain
at 1dB G.C.P.
Symbol
IDSS
-
8
12
-
4000
-
-1.0
-2.0
-3.5
-5
-
-
10.0
11.0
-
-
4.8
6.0
41.5
42.5
-
VDS = 5V, IDS = 480mA
VDS = 5V, IDS = 4800mA
VDS = 5V, VGS = 0V
IGS = -480A
VDS = 10V
IDS = 0.6 IDSS
(Typ.)
VDS = 10V
IDS = 0.6 IDSS (Typ.)
A
mS
V
dB
12.0
13.0
-
dB
10.0
11.0
-
dB
A
dBm
V
gm
Vp
VGSO
P1dB
FLL200IB-1
FLL200IB-2
FLL200IB-3
G1dB
Idsr
Power added Efficiency
-
34
-
%
Rth
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
Thermal Resistance
-
1.6
1.8
Channel to Case
10V x Idsr x Rth
C/W
add
Channel Temperature Rise
-
-
80
C
Tch
G.C.P.: Gain Compression Point
CASE STYLE: IB
FLL200IB-1
FLL200IB-2
FLL200IB-3
f=1.5GHz
f=2.3GHz
f=2.6GHz
f=1.5GHz
f=2.3GHz
f=2.6GHz
FEATURES
High Output Power: P1dB = 42.5dBm (Typ.)
High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1)
High PAE: add = 34% (Typ.)
Proven Reliability
Hermetically Sealed Package
DESCRIPTION
The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that
are specifically designed to provide high power at L-Band frequencies
with gain, linearity and efficiency superior to that of silicon devices.
The performance in multitone environments for Class AB operation make
them ideally suited for base station applications.
Fujitsu's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
2
FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
40
20
80
100
60
0
50
100
150
200
2
0
4
6
8
10
Case Temperature (C)
Drain-Source Voltage (V)
Total Power Dissipation (W)
4000
2000
8000
6000
Drain Current (mA)
VGS =0V
-0.5V
-1.5V
-2.0V
-1.0V
3
FLL200IB-1
L-Band Medium & High Power GaAs FET
OUTPUT POWER vs. INPUT POWER
VDS=10V
IDS 0.6 IDSS
f = 1.5 GHz
21 23
25 27
29 31
Input Power (dBm)
44
42
40
38
36
34
32
30
40
50
20
10
Output Power (dBm)
add
Pout
add
(%)
S-PARAMETERS
VDS = 10V, IDS = 4800mA
FREQUENCY
S11
S21
S12
S22
(MHZ)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
1000
.888
124.3
1.517
13.5
.009
-5.0
.819
150.3
1100
.841
110.9
1.761
-.2
.012
-17.3
.796
147.5
1200
.754
91.4
2.113
-18.0
.015
-33.3
.786
145.9
1300
.584
60.4
2.559
-42.4
.019
-56.8
.790
142.7
1400
.353
1.2
2.876
-73.3
.022
-86.9
.790
140.7
1500
.341
-87.7
2.754
-105.9
.021
-119.8
.800
136.5
1600
.490
-133.3
2.443
-132.5
.019
-147.5
.787
131.6
1700
.609
-156.4
2.215
-156.1
.017
-172.2
.764
127.5
1800
.680
-170.8
2.096
-179.2
.016
162.7
.732
123.4
1900
.719
179.5
2.034
155.9
.015
135.4
.716
121.2
2000
.753
173.8
1.953
126.8
.015
103.5
.729
116.4
2500
.942
145.3
.563
-15.5
.006
-39.0
.451
32.7
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180
+90
0
-90
S21
S12
3
1
0.06
2
1GHz
1GHz
1GHz
1GHz
2
2
1.1
1.2
1.2
1.3
1.2
1.3
1.3
1.4
1.4
1.5
1.6
1.6
1.7
1.8
1.8
1.9
2.5
2
2
1.1
1.4
1.4
1.5
1.5
1.6
1.6
1.7
1.7
1.8
1.8
1.9
1.9
2.5
2.5
0.1
250
50
25
10
SCALE FOR |S
12
|
SCALE FOR |S21|
Download S-Parameters, click here
4
FLL200IB-2
L-Band Medium & High Power GaAs FET
OUTPUT POWER vs. INPUT POWER
VDS=10V
IDS 0.6 IDSS
f = 2.3 GHz
23 25
27 29
31 33
Input Power (dBm)
44
42
40
38
36
34
32
30
40
50
20
10
Output Power (dBm)
add
Pout
add
(%)
S-PARAMETERS
VDS = 10V, IDS = 4800mA
FREQUENCY
S11
S21
S12
S22
(MHZ)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
500
.944
157.3
1.164
60.9
.004
-.8
.906
166.1
1000
.937
127.4
.835
28.8
.006
-16.3
.855
153.8
1500
.880
90.3
1.090
-14.0
.010
-55.4
.826
141.4
1700
.791
68.9
1.421
-39.7
.014
-81.9
.810
135.6
2000
.379
27.8
2.283
-100.2
.025
-147.2
.814
125.6
2300
.309
82.4
2.569
179.4
.031
128.7
.789
104.9
2500
.408
41.8
2.632
128.5
.035
78.5
.651
83.8
2700
.480
-43.5
2.631
55.1
.039
6.2
.290
26.4
3000
.803
-158.4
.772
-68.4
.012
-111.1
.718
-177.7
3500
.915
135.8
.030
-151.4
.001
72.1
.937
131.5
4000
.926
102.3
.013
-8.2
.002
8.3
.947
109.9
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180
+90
0
-90
S21
S12
3
1
0.06
2
4GHz
4GHz
2.9GHz
2.9GHz
1.0GHz
2
1.7
1.8
2.7
2.6
1.5
1.5
1.6
1.7
1.8
2.8
2.8
2.9
2.9
3.0
3.0
1.9
3.5
2.7
2.7
2.5
2.5
2.6
2.6
2.8
1.9
1.9
2.0
2.0
2.1
2.1
2.3
2.2
2.4
2.5
2.5
2.4
2.3
2.2
2.1
2.0
0.1
250
50
25
100
10
SCALE FOR |S
12
|
SCALE FOR |S21|
1.0GHz
Download S-Parameters, click here
5
FLL200IB-3
L-Band Medium & High Power GaAs FET
OUTPUT POWER vs. INPUT POWER
VDS=10V
IDS 0.6 IDSS
f = 2.6 GHz
23 25
27 29
31 33
Input Power (dBm)
44
42
40
38
36
34
32
30
40
50
20
10
Output Power (dBm)
add
Pout
add
(%)
S-PARAMETERS
VDS = 10V, IDS = 4800mA
FREQUENCY
S11
S21
S12
S22
(MHZ)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
500
.962
166.6
1.649
63.2
.007
41.9
.837
168.9
1000
.933
144.9
1.143
30.0
.015
32.2
.798
156.2
1500
.864
115.5
1.368
-12.1
.031
2.8
.726
142.6
2000
.548
64.6
2.320
-75.5
.059
-50.7
.526
137.3
2500
.220
-111.2
3.742
-173.7
.051
-138.8
.560
107.0
3000
.214
-85.0
4.634
7.9
.039
-126.8
.782
-128.3
3500
.923
178.6
.375
-118.7
.017
117.2
.898
166.5
4000
.953
150.4
.065
-162.9
.005
84.4
.939
147.5
4500
.952
131.2
.020
168.3
.001
75.2
.951
133.4
5000
.953
113.9
.008
143.6
.001
63.7
.957
119.1
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180
+90
0
-90
S21
S12
8
0.06
0.06
6
4
2
5.0
1.5GHz
1.5GHz
2.9
1.5GHz
1.5GHz
2.8
2.9
2.9
2.8
2.7
2.7
5.0
2.5
2.5
2.8
2.6
2.6
2.6
2.2
2.1
3.0
3.0
2.3
3.1
3.1
3.4
3.2
3.2
3.3
3.3
3.4
3.5
3.5
4.0
4.0
4.5
5.0
4.5
3.5
2.0
2.0
3.1
3.0
2.9
2.1
2.3
2.3
2.2
2.4
2.1
2.2
2.0
2.0
2.5
2.5
2.6
2.6
2.7
2.7
0.10
0.10
250
50
100
10
SCALE FOR |S21|
SCALE FOR |S
12
|
Download S-Parameters, click here
PDF 
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