FEATURES
High Voltage Operation : VDS=28V
High Gain: 15dB(typ.) at Pout=43dBm(Avg.)
Broad Frequency Range : 2100 to 2200MHz
Proven Reliability
DESCRIPTION
The FLL21E090IK is a high power GaAs FET that offers high efficiency,
ease of matching, greater consistency and broad bandwidth for high
power L-band amplifiers. This device is targeted for high voltage, low
current operation in digitally modulated base station amplifiers. This
product is ideally suited for W-CDMA base station amplifiers while
offering high gain, long term reliability and ease of use.
ABSOLUTE MAXIMUM RATINGS
Item Symbol
Condition
Rating Unit
Drain-Source Voltage
V
DS
32 V
Gate-Source Voltage
V
GS
Tc=25
o
C
-3 V
Total Power Dissipation
P
t
125 W
Storage Temperature T
stg
-65 to +175
o
C
Channel Temperature T
ch
200
o
C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Item
Symbol Condition
Limit
Unit
min. Typ. Max.
Pinch-Off Voltage
V
p
V
DS
=5V, I
DS
=150mA -0.1 -0.2
-0.5
V
Gate-Source Breakdown Voltage
V
GSO
I
GS
=-1.5mA
-5
V
3rd Order Inter modulation Distortion
IM
3
V
DS
=28V -
-35 -30 dBc
Power Gain
Gp
I
DS(DC)
=700mA 14.0 15.0 -
dB
Drain Efficiency
d
Pout=43dBm(Avg.) -
26 -
%
Adjacent Channel Leakage Power Ratio ACLR note -
-36 -
dBc
Thermal Resistance
R
th
Channel to Case
-
1.1 1.2
o
C /W
Note 1 : IM3 ACLR and Gain test condition as follows:
IM3 & Gain : fo=2.1325GHz, f1=2.1475GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch
non clipping modulation measured over 3.84MHz at fo-15MHz and fI+15MHz.
ACLR : fo=2.1325GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch non clipping modulation,
measured over 3.84MHz at fo+/5MHz.
Edition 1.2
Mar 2004
1
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
o
C)
Item Symbol Condition
Limit
Unit
DC Input Voltage
V
DS
<28 V
Forward Gate Current I
GF
R
G
=2
<352 mA
Reverse Gate Current I
GR
R
G
=2
>-31 mA
Channel Temperature
T
ch
155
o
C
FLL21E090IK
High Voltage - High Power GaAs FET
2
Output Power , Drain Efficiency vs. Input Power
@V
DS
=28V, I
DS
=700
A, f=2.14GHz
Output Power vs. Frequency
@V
DS
=28V, I
DS
=700
A
FLL21E090IK
High Voltage - High Power GaAs FET
Two-Carrier IMD(ACLR)& Drain Efficiency vs. Output Power
@V
DS
=28V I
DS
=700mA fo=2.1325, f1=2.1475GHz
W-CDMA 3-GPP BS-1 64ch Modulation
Single-Carrier ACLR & Drain Efficiency vs. Output Power
@V
DS
=28V I
DS
=700mA fo=2.1325GHz
W-CDMA 3GPP BS-1 64ch Modulation
31
33
35
37
39
41
43
45
47
49
51
2
2.05
2.1
2.15
2.2
2.25
2.3
Frequency [GHz]
O
u
tp
ut P
o
w
e
r
[dB
m
]
Pin=20dBm
Pin=24dBm
Pin=28dBm
Pin=32dBm
Pin=36dBm
P1dB
32
34
36
38
40
42
44
46
48
50
18 20 22 24 26 28 30 32 34 36 38 40
Input Pow er [dBm ]
O
u
tp
ut P
o
w
e
r
[dB
m
]
0
10
20
30
40
50
60
70
80
90
D
r
ain
E
f
f
i
ci
en
cy
[
%
]
Pout
Drain Efficiency
-60
-55
-50
-45
-40
-35
-30
-25
28 30 32 34 36 38 40 42 44
Output Pow er [dBm]
I
M
D [
d
Bc
]
0
5
10
15
20
25
30
35
D
r
ain
E
f
f
i
ci
en
cy
[
%
]
IM3
IM5
Drain Efficiency
-60
-55
-50
-45
-40
-35
-30
-25
28 30 32 34 36 38 40 42 44
Output Pow er [dBm]
ACL
R [
d
Bc
]
0
5
10
15
20
25
30
35
D
r
ain
E
f
f
i
ci
en
cy
[
%
]
+/-5MHz
+/-10MHz
Drain Efficiency
3
High Voltage - High Power GaAs FET
FLL21E090IK
S-Parameters @V
DS
=28V, I
DS
=700mA, f=1.7 to 3 GHz
S 11
S 22
2.0G H z
25
50
2.2
2.1
2.2
2.1
2.0G H z
0
+10j
+25j
+50j
+100j
+250j
-10j
-25j
-50j
-100j
-250j
100
10
S 12
S 21
0.4
0.3
8
180
0
-90
+90
Scale for |S
21
|
S
c
al
e f
o
r
|
S
12
|
2.0GHz
6
2.1
2.2
!freq(GHzS11(mag S11(ang) S21(mag S21(ang) S12(mag S12(ang) S22(mag S22(ang)
0.1
0.973
175.6
0.958
161.9
0.000
34.8
0.711
-168.4
0.2
0.953
171.7
1.370
136.9
0.001
94.1
0.876
-175.4
0.3
0.934
169.7
1.433
95.6
0.003
50.0
0.931
174.7
0.4
0.932
167.0
1.182
61.6
0.003
12.2
0.922
167.3
0.5
0.940
164.2
0.890
33.5
0.002
3.7
0.908
162.4
1
0.947
147.8
0.390
-31.8
0.003
18.2
0.928
137.9
1.1
0.952
143.8
0.381
-41.2
0.003
14.1
0.921
132.4
1.2
0.958
139.8
0.394
-50.1
0.004
7.2
0.922
126.4
1.3
0.948
135.8
0.423
-59.3
0.004
7.5
0.921
120.0
1.4
0.951
131.5
0.480
-69.3
0.004
13.5
0.910
112.6
1.5
0.952
126.7
0.571
-80.6
0.005
-1.2
0.893
104.1
1.6
0.935
121.3
0.715
-93.2
0.007
-19.0
0.857
94.5
1.7
0.924
114.9
0.952
-108.0
0.008
-35.4
0.820
83.3
1.8
0.896
107.1
1.356
-126.3
0.010
-48.1
0.776
69.2
1.9
0.866
96.5
2.101
-150.4
0.012
-78.7
0.692
50.7
1.95
0.832
89.8
2.692
-165.2
0.014
-102.2
0.631
38.1
2
0.775
80.9
3.492
176.7
0.016
-121.5
0.553
21.5
2.05
0.675
67.3
4.599
153.2
0.017
-152.8
0.454
-3.0
2.1
0.478
46.0
5.845
123.1
0.020
161.6
0.352
-45.7
2.11
0.422
40.4
6.094
115.8
0.020
151.9
0.338
-57.6
2.12
0.360
34.3
6.273
108.9
0.020
141.1
0.327
-70.7
2.13
0.293
27.1
6.451
101.3
0.020
130.2
0.323
-84.5
2.14
0.222
18.7
6.549
93.5
0.020
123.6
0.325
-98.7
2.15
0.149
6.2
6.559
85.9
0.021
111.2
0.333
-112.3
2.16
0.083
-18.5
6.563
78.2
0.020
97.2
0.347
-125.6
2.17
0.052
-87.3
6.512
70.6
0.020
88.0
0.364
-137.7
2.18
0.100
-139.9
6.332
63.2
0.019
72.8
0.385
-148.7
2.19
0.166
-156.8
6.214
56.0
0.020
69.5
0.403
-158.2
2.2
0.228
-166.8
6.005
49.2
0.019
53.5
0.425
-167.4
2.25
0.479
166.4
4.860
18.9
0.016
8.9
0.513
160.9
2.3
0.624
151.2
3.765
-4.5
0.015
-20.0
0.577
141.9
2.35
0.710
141.0
2.960
-22.9
0.015
-45.9
0.626
127.9
2.4
0.764
133.4
2.395
-38.2
0.014
-65.6
0.665
116.9
2.5
0.822
121.6
1.673
-62.5
0.013
-95.6
0.723
98.1
2.6
0.848
112.1
1.293
-83.3
0.011
-118.3
0.767
80.6
2.7
0.858
103.8
1.066
-101.3
0.011
-142.2
0.790
63.4
2.8
0.860
96.0
0.936
-119.0
0.011
-154.2
0.818
45.2
2.9
0.856
88.1
0.866
-137.8
0.012
-174.4
0.825
25.3
3
0.846
78.8
0.849
-157.1
0.012
168.1
0.829
3.5
4
FLL21E090IK
High Voltage - High Power GaAs FET
BOARD LAYOUT
<INPUT SIDE>
<OUTPUT SIDE>
r=3.5 t=0.6mm
5
IK Package Outline
Metal-Ceramic Hermetic Package
PIN ASSIGMENT
1 : GATE
2 : SOURCE(Flange)
3 : DRAIN
Unit:mm
High Voltage - High Power GaAs FET
FLL21E090IK
6
FLL21E090IK
High Voltage - High Power GaAs FET
For further information please contact :
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products are dangerous to the human body if inhaled, ingested, or
swallowed.
Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL +81-55-275-4411
FAX +81-55-275-9461
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama,244-0845,Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
2004 Eudyna Devices USA Inc.
Printed in U.S.A.
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