Item
Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Power-Added Efficiency
Thermal Resistance
Symbol
I
DSS
V
GSO
-
6000
-
-
12
16
-1.0
-2.0
-3.5
-5
-
-
44.5
45.5
-
9.0
10.0
-
-
44
-
-
1.0
1.4
V
DS
= 5V, V
GS
=0V
V
DS
= 5V, I
DS
=7.2A
V
DS
= 5V, I
DS
=720mA
I
GS
= -720
A
Channel to Case
V
DS
= 12V
f=1.96GHz
I
DS
= 2A
V
DS
= 10V
f=1.96GHz
I
DS
= 2A
A
mS
V
dB
dBm
V
C/W
%
gm
V
p
P
1dB
G
1dB
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
-
44.5
-
-
10.0
-
dB
dBm
P
1dB
G
1dB
add
Drain Current
-
6.0
8.0
A
I
DSR
R
th
Conditions
Unit
Limits
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
C)
G.C.P.: Gain Compression Point
CASE STYLE: IP
Parameter
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
Tc = 25
C
V
V
W
C
C
V
GS
P
T
T
stg
T
ch
Condition
107
-65 to +175
+175
-5
15
Rating
Unit
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 54.4 and -17.4 mA respectively with
gate resistance of 25
.
3. The operating channel temperature (Tch) should not exceed 145
C.
1
APPLICATIONS
Solid State Base-Station Power Amplifier.
PCS/PCN Communication Systems.
Edition 1.6
December 1999
FLL400IP-2
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLL400IP-2 is a 35 Watt GaAs FET that employs a push-pull design which
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and complexity
of highly linear, high power base station transmitting amplifiers. This new product is
uniquely suited for use in PCS/PCN base station amplifiers as it offers high gain,
long term reliability and ease of use.
FEATURES
Push-Pull Configuration
High Power Output: 35W (Typ.)
High PAE: 44% (Typ.)
Broad Frequency Range: 800 to 2000 MHz.
Suitable for class A operation at 10V
and class AB operation at 12V
4
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0799M200
FLL400IP-2
L-Band Medium & High Power GaAs FET
Case Style "IP"
Metal-Ceramic Hermetic Package
18.6
0.2
(0.732)
45
2
3
4
5
6
1
22
0.2
(0.866)
2.4
(0.094)
(0.039)
9.8
0.2
(0.386)
(0.102)
2.6
0.2
8.2
(0.332)
1.9
(0.075)
3.0
0.5 MIN.
(0.118)
3.0
0.5 MIN.
(0.118)
5.5MAX
(0.217)
13.8
0.2
(0.543)
13.3
(0.523)
2-R1.3
0.2
(0.051)
5
(0.197)
0.1
+0.05
-0.01
2-1.4
(0.055)
2-1
(0.039)
Unit: mm (inches)
1, 2: Gate
3, 6: Source
4, 5: Drain
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