1
Edition 1.5
October 2004
FLL400IP-3
L-Band Medium & High Power GaAs FET
FEATURES
Push-Pull Configuration
High Power Output: 35W (Typ.)
High PAE: 43% (Typ.)
Broad Frequency Range: 2300 to 2500 MHz.
Suitable for class A operation at 10V
and class AB operation at 12V
Parameter
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
Tc = 25
C
V
V
W
C
C
VGS
PT
Tstg
Tch
Condition
107
-65 to +175
+175
-5
15
Rating
Unit
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25
C)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 54.4 and -17.4 mA respectively with
gate resistance of 25
.
3. The operating channel temperature (Tch) should not exceed 145C.
Item
Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Power-Added Efficiency
Thermal Resistance
Symbol
I
DSS
V
GSO
-
6000
-
-
12
16
-1.0
-2.0
-3.5
-5
-
-
-
43
-
-
1.0
1.4
V
DS
= 5V, V
GS
= 0V
V
DS
= 5V, I
DS
= 7.2A
V
DS
= 5V, I
DS
= 720mA
I
GS
= -720
A
Channel to Case
A
mS
V
V
C/W
%
gm
V
p
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
44.5
45.5
-
8.0
9.0
-
V
DS
= 12V
f = 2.5 GHz
I
DS
= 2A
dB
dBm
P
1dB
G
1dB
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
-
44.5
-
-
9.0
-
V
DS
= 10V
f = 2.5 GHz
I
DS
= 5A (Note 1)
dB
dBm
P
1dB
G
1dB
add
Drain Current
-
6.0
8.0
A
I
DSR
R
th
Conditions
Unit
Limits
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
C)
G.C.P.: Gain Compression Point
CASE STYLE: IP
Note 1: The device shall be measured at a constant VGS condition.
DESCRIPTION
The FLL400IP-3 is a 35 Watt GaAs FET that employs a push-pull design that
offers ease of matching, greater consistency and a broader bandwidth for high
power S-band amplifiers. This product is targeted to reduce the size and
complexity of highly linear, high power base station transmitting amplifiers.
This new product is uniquely suited for use in Wireless Local Loop (WLL) base
station amplifiers as it offers high gain, long term reliability and ease of use.
Eudyna's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
4
FLL400IP-3
L-Band Medium & High Power GaAs FET
Case Style "IP"
Metal-Ceramic Hermetic Package
18.6
0.2
(0.732)
45
2
3
4
5
6
1
22
0.2
(0.866)
2.4
(0.094)
(0.039)
9.8
0.2
(0.386)
(0.102)
2.6
0.2
8.2
(0.332)
1.9
(0.075)
3.0
0.5 MIN.
(0.118)
3.0
0.5 MIN.
(0.118)
5.5MAX
(0.217)
13.8
0.2
(0.543)
13.3
(0.523)
2-R1.3
0.2
(0.051)
5
(0.197)
0.1
+0.05
-0.01
2-1.4
(0.055)
2-1
(0.039)
Unit: mm (inches)
1, 2: Gate
3, 6: Source
4, 5: Drain
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put this product into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
2004 Eudyna Devices USA Inc.
Printed in U.S.A.
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