Item
Symbol
V
DS
= 12V
f = 2.6 GHz
I
DS
= 5.0A
Pin = 40.0dBm
Gate-Source Breakdown Voltage
V
GSO
-5
-
-
I
GS
= -2.2mA
V
Pinch-Off Voltage
-0.1
-0.3
-0.5
V
DS
= 5V, I
DS
= 220mA
V
V
p
Drain Current
-
8
-
V
DS
= 5V, V
GS
= 0V
A
I
DSS
Drain Current
-
11.5
15.0
A
I
DSR
Output Power
48.0
49.0
-
dBm
P
out
Linear Gain (Note 1)
11.0
12.0
-
dB
GL
Power-Added Efficiency
-
50
-
%
add
Thermal Resistance
-
0.8
1.1
Channel to Case
C/W
R
th
Conditions
Unit
Limits
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
C)
CASE STYLE: IQ
Note 1: The condition for GL is the same as Pout except Pin = 25.0dBm.
FEATURES
Push-Pull Configuration
High Power Output: 80W
High PAE: 50%.
Excellent Linearity
Suitable for class AB operation.
Hermetically Sealed Package
1
Edition 1.1
October 2001
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
Tc = 25
C
V
V
W
C
C
V
GS
P
T
T
stg
T
ch
Condition
136
-65 to +175
+175
-5
15
Rating
Unit
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 176 and -51.8 mA respectively with
gate resistance of 5
.
3. The operating channel temperature (Tch) should not exceed 145
C.
DESCRIPTION
The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull design.
This device offers excellent linearity, ease of matching, and greater consistency
in covering the frequency band of 2.5 to 2.7 GHz. This new product is uniquely
suited for use in MMDS applications as it offers high gain, long term reliability
and ease of use.
FLL810IQ-3C
L-Band High Power GaAs FET
2
FLL810IQ-3C
L-Band High Power GaAs FET
OUTPUT POWER &
add vs. INPUT POWER
32
30
34
36
40
38
44
42
46
48
50
22
24
26
28
32
30
34
36
38
40
Input Power (dBm)
VDS = 12V
IDS = 5A
Output Power (dBm)
10
0
20
30
40
50
60
add
(%)
Pout
add
IM3
IDS(RF)
IM5
IMD & IDS(RF) vs. TOTAL OUTPUT POWER
-60
-50
-40
-30
2
3
4
5
6
7
8
34
36
38
40
42
44
Total Output Power (dBm)
VDS = 12V
IDS = 5A
IMD (dBc)
IDS(RF) (A)
fo = 2.6GHz
f1 = 2.61GHz
34
36
38
40
42
44
46
48
50
2.5
2.4
2.8
2.6
2.7
Frequency (GHz)
Output Power (dBm)
OUTPUT POWER vs. FREQUENCY
34dBm
39dBm
30dBm
26dBm
22dBm
VDS = 12V
IDS = 5A
3
FLL810IQ-3C
L-Band High Power GaAs FET
S-PARAMETERS
VDS = 12V, IDS = 2500mA
FREQUENCY
S11
S21
S12
S22
(MHZ)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
1500
.856
137.9
1.167
39.2
.021
43.0
.841
167.3
1600
.786
131.5
1.430
25.6
.026
31.2
.805
167.9
1700
.698
124.7
1.722
10.3
.029
15.8
.790
169.2
1800
.579
118.4
2.020
-8.0
.034
0.9
.777
170.2
1900
.455
115.3
2.323
-27.7
.036
-16.4
.795
171.0
2000
.347
115.2
2.564
-48.5
.039
-39.5
.818
169.7
2100
.247
119.8
2.784
-67.9
.041
-59.6
.819
167.1
2200
.141
142.0
3.064
-90.1
.041
-84.9
.781
163.5
2300
.200
-160.2
3.418
-114.9
.039
-114.5
.668
162.4
2400
.425
-159.8
3.446
-143.7
.035
-150.5
.560
170.4
2500
.634
-179.2
3.332
-173.7
.029
170.0
.556
-175.3
2600
.738
156.5
2.845
161.4
.024
122.6
.659
-168.5
2700
.750
129.4
2.436
134.5
.023
84.7
.747
-168.5
2800
.693
94.5
2.125
113.9
.020
47.3
.822
-170.0
2900
.620
48.8
1.618
89.3
.020
12.3
.879
-172.2
3000
.601
0.2
1.345
67.3
.019
-15.0
.910
-175.1
3100
.713
-39.5
1.031
50.9
.017
-35.8
.931
-177.6
3200
.804
-68.6
.748
31.0
.014
-60.2
.922
-179.8
3300
.863
-89.7
.587
19.4
.015
-70.4
.936
178.2
3400
.895
-104.3
.420
9.2
.014
-85.8
.936
176.2
3500
.909
-115.6
.335
0.5
.009
-96.7
.951
174.2
Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used
to determine the calculated Push-Pull S-Parameter amplifier designs.
Download S-Parameters, click here
4
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
2001 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI05019M200
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
FLL810IQ-3C
L-Band High Power GaAs FET
Case Style "IQ"
15.5
0
.2
2.40.15
4-0.1
1.9
0.2
5.5 Max.
14.90.2
8.0
0.15
2.5 MIN.
2.5 MIN.
4-R1.30.2
6.0
4-2.6
0.2
17.4
0.2
4-2.0
1
2
5
4
3
6
240.35
20.40.2
45
Unit: mm (inches)
1, 2: Gate
3:
Source
4, 5: Drain
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