1
Edition 1.2
August 2004
FLM1414-8F
Internally Matched Power GaAs FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
42.8
-65 to +175
175
Tc = 25C
V
V
W
C
C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with
gate resistance of 100
.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
-
3400
5200
-0.5
-1.5
-3.0
38.5
39.0
-
5.0
6.0
-
VDS = 5V, IDS = 170mA
VDS = 5V, IDS = 2200mA
VDS = 5V, VGS = 0V
IGS = -170A
VDS = 10V
f = 14.0 ~ 14.5 GHz
IDS = 0.65 IDSS(Typ.)
ZS = ZL = 50
mA
V
-
3400
-
mS
-5.0
-
-
V
dB
dBm
gm
Vp
VGSO
P1dB
G1dB
Drain Current
-
2200
2600
mA
Idsr
Power-Added Efficiency
-
27
-
%
add
Gain Flatness
-
-
0.6
dB
G
Thermal Resistance
Channel to Case
-
3.0
3.5
C/W
Rth
3rd Order Intermodulation
Distortion
f = 14.5GHz,
f = 10MHz
2-Tone Test
Pout = 28.5dBm S.C.L.
-44
-46
-
dBc
IM3
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
C)
CASE STYLE: IA
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
10V x Idsr x Rth
Channel Temperature Rise
-
-
80
C
Tch
FEATURES
High Output Power: P1dB = 39.0dBm (Typ.)
High Gain: G1dB = 6.0dB (Typ.)
High PAE:
add = 27% (Typ.)
Low IM3 = -46dBc@Po = 28.5dBm (Typ.)
Broad Band: 14.0 ~ 14.5GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed
DESCRIPTION
The FLM1414-8F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
2
FLM1414-8F
Internally Matched Power GaAs FET
POWER DERATING CURVE
20
10
40
50
30
0
50
100
150
200
Case Temperature (
C)
Total Power Dissipation (W)
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V
f1 = 14.5 GHz
f2 = 14.51 GHz
2 - tone test
18
Pout
IM3
20
22
24
26
28
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
Output Power (S.C.L.) (dBc)
-25
-35
-45
-55
-65
27
25
23
29
33
35
31
21
IM
3
(dBc)
OUTPUT POWER vs. FREQUENCY
Pin=34dBm
32dBm
30dBm
28dBm
14.0
14.1
14.4 14.5
14.2
14.3
Frequency (GHz)
33
34
35
36
37
38
39
Output Power (dBm)
VDS=10V
P1dB
OUTPUT POWER vs. INPUT POWER
26
28
30
32
34
36
38
40
22
24
26
28
30
32
34
10
5
0
15
20
25
Input Power (dBm)
Output Power (dBm)
add
Pout
add
(%)
VDS=10V
f = 14.25 GHz
4
FLM1414-8F
Internally Matched Power GaAs FET
2-R 1.25
0.15
(0.049)
0.5
(0.020)
8.1
(0.319)
13.0
0.15
(0.512)
16.5
0.15
(0.650)
3.2 Max.
(0.126)
1.8
0.15
(0.071)
0.1
(0.004)
9.7
0.15
(0.382)
1.5 Min.
(0.059)
1.5 Min.
(0.059)
1.15
(0.045)
0.2 Max.
(0.008)
Case Style "IA"
Metal-Ceramic Hermetic Package
Unit: mm(inches)
1. Gate
2. Source (Flange)
3. Drain
4. Source (Flange)
1
2
3
4
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put this product into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
2004 Eudyna Devices USA Inc.
Printed in U.S.A.
PDF 
ZIP