C-Band Internally Matched FET
FEATURES
High Output Power: P1dB=45.5dBm(Typ.)
High Gain: G1dB=9.0dB(Typ.)
High PAE: add=36%(Typ.)
Broad Band: 5.9~6.4GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed Package
Edition 1.3
September 2004
1
FLM5964-35F
DESCRIPTION
The FLM5964-35F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50
system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
o
C)
Item
Symbol
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
V
Total Pow er Dissipation
P
T
W
Storage Temperature
T
stg
o
C
Channel Temperature
T
ch
o
C
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25
o
C)
Item
Symbol
Unit
DC Input Voltage
V
DS
V
Forw ard Gate Current
I
GF
mA
Reverse Gate Current
I
GR
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Min.
Typ.
Max.
Drain Current
I
DSS
-
16
-
A
Transconductance
g
m
-
16
-
S
Pinch-off Voltage
V
p
-0.5
-1.5
-3.0
V
Gate-Source Breakdow n Voltage
V
GSO
-5.0
-
-
V
Output Pow er at 1dB G.C.P.
P
1d B
45.0
45.5
-
dBm
Pow er Gain at 1dB G.C.P.
G
1d B
8.0
9.0
-
dB
Drain Current
I
d s r
-
8.5
9.5
A
Pow er-added Efficiency
ad d
-
36
-
%
Gain Flatness
G
-
-
1.2
dB
3rd Order Intermodulation
Distortion
IM
3
-38
-40
-
dBc
Thermal Resistance
R
th
Channel to Case
-
1.1
1.3
o
C/W
Channel Temperature Rise
T
ch
-
-
100
o
C
CASE STYLE : IK
G.C.P.:Gain Compression Point
ESD
Class III
2000V~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k)
Condition
Limit
-65 to +175
175
115
Rating
15
-5
10
RG=10
108
RG=10
-23.2
Item
Symbol
Condition
Limit
Unit
VDS=5V, VGS=0V
VDS=5V, IDS=8.0A
VDS=5V, IDS=480mA
IGS=-480uA
VDS=10V
f=5.9 - 6.4 GHz
IDS(DC)=8.0A(typ.)
Zs=ZL=50 ohm
f=6.4 GHz
f=10MHz, 2-tone Test
Pout=35.0dBm(S.C.L.)
10V x IDS(DC) X R
th
FLM5964-35F
C-Band Internally Matched FET
2
Output Power & P.A.E. vs. Input Power
VDS=10V, IDS(DC), F=6.15GHz
33
35
37
39
41
43
45
47
49
24
26
28
30
32
34
36
38
40
42
Input Power (dBm)
O
u
tp
u
t
P
o
w
e
r
(d
Bm)
0
10
20
30
40
50
60
70
80
Po
w
e
r
A
d
d
e
d
E
f
f
i
ci
en
cy
(
%
)
Pout
P.A.E
IMD vs. Output Power
VDS =10V, IDS (DC)=8A
f1=6.40GHz, f2=6.41GHz
-60
-55
-50
-45
-40
-35
-30
-25
30 31 32 33 34 35 36 37 38 39 40
O utput Power (S.C.L.) (dBm)
S.C.L. :Single Carria Level
IM
D
(
d
B
c
)
IM3
IM5
Power Derating Curve
0
20
40
60
80
100
120
140
0
50
100
150
200
Case Temperature ()
To
t
a
l
P
o
w
e
r
D
i
s
s
ip
a
t
io
n
(
W
)
Output Power vs. Frequency
VDS=10V, IDS(DC)=8A
34
36
38
40
42
44
46
48
5.7 5.8 5.9
6
6.1 6.2 6.3 6.4 6.5 6.6
Frequency (GHz)
O
u
t
put
P
o
w
e
r
(
d
B
m
)
Pin=41dBm
P1dB
Pin=34dBm
Pin=30dBm
Pin=26dBm
C-Band Internally Matched FET
FLM5964-35F
VDS=10V, IDS(DC)=8.0A
S-PARAMETER
3
-10j
S 11
S 22
7.4
5.5
5.5
25
6.15
5.9
6.15
6.4
7.4
5.9
6.4
6.8
6.8
10
0
+10j
+25j
+50j
+100j
+250j
-25j
-50j
-100j
-250j
-10j
S 12
S 21
0.2
3
5.9
6.15
7.4
5.5
6.15
6.8
6.8
180
0
-90
+90
Scale for |S
21
|
S
c
al
e f
o
r
|
S
12
|
5.5
2
10
6.4
5.9
10
7.4
6.4
Freq.
[G H z]
M A G
A N G
M A G
A N G
M A G
A N G
M A G
A N G
5.50
0.67
102.87
2.88
-62.72
0.04
-95.54
0.24
-177.89
5.60
0.66
85.51
2.95
-79.17
0.05
-114.71
0.20
153.50
5.70
0.65
68.42
3.02
-96.11
0.05
-134.53
0.19
122.57
5.80
0.63
50.90
3.06
-113.27
0.05
-153.13
0.20
95.12
5.90
0.61
33.18
3.11
-130.34
0.06
-169.44
0.22
72.18
6.00
0.58
14.84
3.14
-147.42
0.06
172.50
0.24
52.33
6.10
0.55
-4.44
3.18
-165.14
0.06
155.67
0.26
37.03
6.20
0.52
-25.22
3.20
177.48
0.07
138.90
0.26
24.21
6.30
0.47
-49.01
3.20
159.01
0.07
120.83
0.25
12.17
6.40
0.45
-76.47
3.19
140.15
0.07
103.25
0.22
-0.99
6.50
0.44
-106.87
3.12
120.73
0.07
83.21
0.16
-13.32
6.60
0.47
-137.61
3.00
100.85
0.07
62.73
0.09
-19.73
6.70
0.52
-166.01
2.82
81.21
0.07
42.98
0.03
45.23
6.80
0.59
170.37
2.62
62.01
0.06
23.63
0.11
95.85
6.90
0.67
150.03
2.36
43.29
0.06
6.16
0.21
91.96
7.00
0.73
133.37
2.13
24.82
0.05
-11.73
0.30
81.85
7.10
0.79
119.68
1.89
8.66
0.05
-26.89
0.38
71.10
7.20
0.83
107.43
1.66
-7.74
0.04
-41.76
0.46
60.22
7.30
0.86
97.28
1.45
-22.74
0.04
-60.07
0.53
50.29
7.40
0.87
87.88
1.26
-36.91
0.03
-69.68
0.59
41.32
S 11
S 21
S 12
S 22
FLM5964-35F
C-Band Internally Matched FET
Package Out Line
Case Style : IK
PIN ASSIGMENT
1 : GATE
2 : SOURCE
3 : DRAIN
4 : SOURCE
Unit : mm
4
C-Band Internally Matched FET
FLM5964-35F
5
For further information please contact :
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products are dangerous to the human body if inhaled, ingested, or
swallowed.
Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
2004 Eudyna Devices USA Inc.
Printed in U.S.A.
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