L-Band Medium & High Power GaAs FET
FEATURES
High Output Power: P1dB=35.5dBm(typ.)
High Gain: G1dB=11.5dB(typ.)
Low Cost Plastic(SMT) Package
Tape and Reel Available
DESCRIPTION
The FLU35ZM is a GaAs FET designed for base station and CPE
application up to a 4.0GHz frequency range. This is a new product
series using a plastic surface mount package that has been optimized
for high volume cost driven applications.
Eudyna's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
o
C)
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
CASE STYLE: ZM
Note1: Product supplied to this specification are 100% DC performance tested.
Note2: The RF parameters are measured on a lot basis by sample testing 10 pcs/lot.
Acceptance Criteria:(accept/reject)=(0/1). Any lot failure shall be 100% retested.
Edition 1.2
Jan 2004
1
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25
o
C)
FLU35ZM
ESD
Class
2000 V
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5k
)
Transconductance
Limit
Item
Symbol
Test Conditions
Unit
Drain Current
Pinch-off Voltage
Gate-Source Breakdown
Voltage
I
DSS
gm
V
p
V
GSO
mA
V
dBm
Min.
Typ.
Max.
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P
1dB
G
1dB
mS
V
dB
-
600 -
-1.0 -2.0 -3.5
-5 -
-
34.5 35.5 -
10.5 11.5 -
V
DS
=10V
f=2.0GHz
I
DS
=0.6I
DSS
(Typ.)
V
DS
=5V, V
GS
=0V
Thermal Resistance
R
th
o
C /W
-
5 6
Channel to Case
-
1200 1800
V
DS
=5V, I
DS
=800mA
V
DS
=5V, I
DS
=60mA
I
GS
=-60uA
G.C.P.:Gain Compression Point
Item
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
V
DS
V
GS
P
T
T
stg
15
-5
20.8
-55 to +150
V
V
W
o
C
Channel Temperature
T
ch
175
o
C
Item
Symbol
Condition
Unit
DC Input Voltage
Forward Gate Current
Reverse Gate Current
V
DS
I
gsf
I
gsr
10
19.4
-2.0
V
mA
mA
Gate Resistance
R
g
100
Channel Temperature
T
ch
145
o
C
FLU35ZM
L-Band Medium & High Power GaAs FET
2
OUTPUT POWER , POWER ADDED EFFICIENCY
vs. INPUT POWER
POWER DERATING CURVE
SMALL SIGNAL R.L. vs FREQUENCY
0
5
10
15
20
25
0
50
100
150
200
Case Temperature[
]
Tot
a
l
P
o
w
e
r
D
i
s
s
i
pa
t
i
o
[
W
]
20
22
24
26
28
30
32
34
36
38
40
10
12
14
16
18
20
22
24
26
28
Input Power
dBm
O
u
tput P
o
w
e
r
[dB
m
]
0
20
40
60
80
100
P
o
w
e
r
A
d
d
e
d
E
f
f
i
cien
cy
[
%
]
f=2.0GHz VDS=10V IDS=0.6IDSS
add
Pout
Wide Band Tuning (1.8GHz
2.2GHz)
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
1.4 1.6 1.8
2
2.2 2.4 2.6 2.8 3
3.2
Fr e q. [GHz]
Sm
a
l
l
Si
g
n
a
l
R
.
L
.
&
I
s
ol
a
t
i
o
n [
d
B
]
-6
-4
-2
0
2
4
6
8
10
12
14
Sm
a
l
l
Si
g
n
a
l
G
a
i
n
[
d
B
]
S11
S12
S22
S21
FLU35ZM
3
L-Band Medium & High Power GaAs FET
S-PARAMETER
VDS=10V, IDS=0.6IDSS(TYP.)
S 11
S 22
2.0
2.0
25
50
3.0
1.0G H z
3.0
1.0G H z
0
+10j
+25j
+50j
+100j
+250j
-10j
-25j
-50j
-100j
-250j
100
10
S 12
S 21
0.6
0.4
20
180
0
-90
+90
Scale for |S
21
|
S
c
al
e f
o
r
|
S
12
|
2.0
10
1.0GHz
3.0
Freq
[GHz]
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.5
0.92
-157.14
4.75
94.86
0.03
14.31
0.67
-172.46
1
0.92
-171.65
2.45
81.26
0.03
9.28
0.67
-175.16
1.5
0.92
-178.09
1.69
70.63
0.03
7.87
0.66
-176.48
2
0.92
175.59
1.32
61.24
0.03
11.56
0.67
-178.45
2.5
0.92
168.62
1.08
50.14
0.03
10.17
0.67
178.10
3
0.89
159.87
0.90
39.03
0.03
16.31
0.69
173.63
3.5
0.90
150.98
0.76
27.30
0.03
13.26
0.71
167.99
4
0.91
143.89
0.64
16.94
0.03
14.12
0.74
162.05
4.5
0.93
137.22
0.54
6.74
0.03
7.95
0.77
156.46
5
0.93
133.89
0.45
-1.01
0.03
9.18
0.78
151.30
S11
S21
S12
S22
FLU35ZM
4
L-Band Medium & High Power GaAs FET
OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER
@ VDS=10V, IDS(DC)=0.6IDSS
OUTPUT POWER vs. FREQUENCY
0
25
50
75
Po
w
e
r A
dded
Effic
i
enc
y
[
%
]
Pin-Pout @f=1.8GHz
15
20
25
30
35
40
6 8 10 12 14 16 18 20 22 24 26 28 30
Input Pow er [dBm ]
O
u
tp
u
t
P
o
w
e
r
[d
B
m
]
450
500
550
600
650
700
D
r
a
i
n
C
u
r
r
e
n
t [m
A
]
Pout
Ids[m A]
P.A.E.
0
25
50
75
Po
w
e
r A
dded
Effic
i
enc
y
[
%
]
Pin-Pout @f=2.0GHz
15
20
25
30
35
40
6
8 10 12 14 16 18 20 22 24 26 28 30
Input Pow e r [dBm ]
O
u
t
put
P
o
w
e
r
[
d
B
m
]
450
500
550
600
650
700
D
r
a
i
n C
u
r
r
e
nt
[
m
A
]
Pout
Ids [m A]
P.A.E.
0
25
50
75
Po
w
e
r A
dded
Effic
i
enc
y
[
%
]
Pin-Pout @f=2.2GHz
15
20
25
30
35
40
6
8 10 12 14 16 18 20 22 24 26 28 30
Input Power [dBm]
O
u
tp
ut P
o
w
e
r
[dB
m
]
450
500
550
600
650
700
Dr
a
i
n
Cu
r
r
e
n
t
[
m
A]
Pout
Ids[mA]
P.A.E.
15
20
25
30
35
40
1.7
1.9
2.1
2.3
Fre que ncy [GHz]
Ou
t
p
u
t
P
o
w
e
r
[
d
B
m
]
Pin=10dBm
Pin=15dBm
Pin=20dBm
Pin=25dBm
Pin=28dBm
P1dB
FLU35ZM
5
L-Band Medium & High Power GaAs FET
W-CDMA SINGLE CARRIER CCDF AND GAIN
W-CDMA SINGLE CARRIER ACLR
IMD vs OUTPUT POWER(2-tone)
W-CDMA 2-CARRIER IMD(ACLR)
Note : *All signal are W-CDMA modulation at 3GPP3.4.12-00 BS-1 64ch non clipping.
@ VDS=10V, IDS(DC)=0.6IDSS
-80
-70
-60
-50
-40
-30
-20
-10
0
15
20
25
30
35
2-tone total Pout [dBm ] @ df=+5M Hz
I
M
D [
d
Bc
]
IM 3@ 1.8GHz
IM 5@ 1.8GHz
IM 3@ 2.0GHz
IM 5@ 2.0GHz
IM 3@ 2.2GHz
IM 5@ 2.2GHz
-60
-55
-50
-45
-40
-35
-30
-25
17
19
21
23
25
27
29
31
2-tone total Pout [dBm ]
A
C
L
R
(I
M
D
) [d
B
c
]
IM 3-L
IM 3-U
IM 5-L
IM 5-U
*fo=2.1325GHz *f1=2.1475GHz
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
23
24
25
26
27
28
29
30
31
32
Output Pow e r [dBm ]
A
C
L
R [
d
Bc
]
-5M Hz
+5M Hz
-10M Hz
+10M Hz
*fo=2.1325GHz
*fo=2.1325GHz
5
6
7
8
9
10
11
12
13
14
15
18
23
28
Output Pow e r [dBm ]
C
C
DF
,
G
a
i
n
[
d
B]
0.01%
Pe ak
Gain
PDF 
ZIP