FMM5703X
24-32GHz LNA MMIC
Item
Symbol
Drain-Source Voltage
VDD
4
V
Input Power
Pin
-3
dBm
C
Storage Temperature
-65 to +175
Tstg
Operating Backside Temperature
C
Top
-45 to +125
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
C)
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 3 volts.
2. This product should be hermetically packaged.
1
Edition 1.0
December 2000
Item
Symbol
Conditions (2)
Unit
Limits
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
C)
Input Return Loss
RLin
-
-
-10
dB
Output Power at 1dB G.C.P.
P1dB
-
-
9
dBm
Output Return Loss
RLout
-
-10
-
dB
Noise Figure
-
2.0
2.5
dB
NF
Associated Gain
15
18
20
dB
G
as
VDD = 3V
f = 32 GHz
IDD
=
20mA (Typ.)
ZS = ZL = 50
Note 1: RF parameter sample size 10pcs. Criteria (accept/reject)=(0/1)
Note 2: Electrical Characteristics specified with RF-probe measurement.
FEATURES
Low Noise Figure: NF = 2dB (Typ.) @ f=32 GHz
High Associated Gain: Gas = 18dB (Typ.) @ f=32 GHz
Wide Frequency Band: 24-32 GHz
High Output Power: 9dBm (Typ.) @ f=32 GHz
Impedance Matched Zin/Zout = 50
DESCRIPTION
The FMM5703X is a LNA MMIC designed for
applications in the 24-32 GHz frequency range.
This product is well suited for satellite communications,
radio link, and applications where low noise and high
dynamic range are required.
26
22
20
34
24
28
30
32
1
2
3
4
5
5
10
15
20
25
Frequency (GHz)
NOISE FIGURE & Gas vs. FREQUENCY
Noise Figure (dB)
G
as
(dB)
VDD = 3V
IDD = 20mA
Gas
NF
P1dB & G1dB vs. FREQUENCY
30
26
24
28
32
36
4
6
8
10
12
10
15
20
25
30
Frequency (GHz)
G1dB (dB)
P1dB
G1dB
P1dB (dBm)
VDD = 3V
IDD = 23mA
2
FMM5703X
24-32GHz LNA MMIC
-10
-15
-20
-5
0
5
-4
-2
0
2
4
6
8
10
12
Input Power (dBm)
OUTPUT POWER vs. INPUT POWER
Output Power (dBm)
26 GHz
30 GHz
32 GHz
34 GHz
28 GHz
VDD = 3V
IDD = 23mA
ASSEMBLY DRAWING
RFin
RFout
0.15
F
100pF
*1
*2
*1: Bonding Wire Length: 250
m
*2: Bonding Wires: 2
*1
*2
4
FMM5703X
24-32GHz LNA MMIC
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
2000 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI04009M200
380
VDD1
RF IN
RF OUT
VDD2
VDD3
1030
1180
1020
600
0
0
140
1420
CHIP OUTLINE
Unit:
m
Chip Size: 1.56mm x 1.16mm
Chip Thickness: 110
m(Typ.)
Pad Dimensions: 1. DC 80 x 80
m
2. RF 80 x 160
m
All Vdd pads are connected together
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
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