Edition 1.1
July 2004
1
Avalanche Photodiode
FPD5W1KX
FEATURES
Data rates up to 2.5Gb/s
Operating temperature: -40c to 85C
Photosensitive diameter: 30m
High cut-off frequency: 3.0GHz at M=5 and 10
Large gain-bandwidth product: 40GHz
Low dark current: 20nA
Low multipled dark current: 3nA
Low excess noise factor: 5 at M=10
APPLICATIONS
2.4 Gb/s optical transmission systems
DESCRIPTION
The FPD5W1KX is a wide bandwidth, high sensitivity avalanche photodiode (APD)
optimized for operation at 1550nm. This APD is designed for use in optical transmission
systems operating at a giga-bit-rate, above 2.4Gb/s, and for long transmission distances.
The APD chip has a photosensitive area diameter of 30m. Fujitsu's advanced InP
material technology realizes a high reliability planar structure device with wide bandwidth
(large gain-bandwidth product) as well as low noise characteristics. A single-mode fiber is
aligned to a hermetically sealed APD through a highly stable optical coupling system.
Parameter
Symbol
Ratings
Unit
ABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise specified)
Min.
Max.
Storage Temperature
Tstg
C
+85
-40
Operating Temperature
C
Top
+85
-40
APD Forward Current
mA
IF
10
-
APD Reverse Voltage
V
VR
VB
-
APD Reverse Current
mA
I
R
3(peak)
0
Note: Since VB may vary from device-to-device, VB data is attached to each device for reference.
2
Avalanche Photodiode
FPD5W1KX
Parameter
OPTICAL & ELECTRICAL CHARACTERISTICS
(Ta=-40C to +85C, =1,310/1,550nm, unless otherwise specified)
Unit
Limits
Max.
Min.
Typ.
Test Conditions
Symbol
Ipo=2
A
Maximum Multiplication
Factor
40
-
30
Mmax
dB
-
-
30
-
Optical Return Loss
ORL
APD Responsivity
A/W
-
0.8
0.85
-
0.8
0.92
-
0.75
-
-
-
0.7
= 1,310nm, M=1, 25C
= 1,550nm, M=1, 25C
= 1,310/1,550nm, M=1,
-40 ~ +85
C
= 1,610nm, M=1, 25C
R
Excess Noise Factor
6.3
4
(0.8)
-
(0.6)
M=10, f=30MHz, B=1MHz,
Ipo=2
A
F
(x)
Capacitance
f=1MHz, VR=0.9 X VB
pF
0.7
-
0.55
Ct
-
-
-
-
800
70
C
-
1700
85
C
Dark Current
ID
nA
25
C
40
15
VR=0.9 x VB
2.0
2.5
1.5
Cut-off Frequency
RL=50
,
-3dB from 500kHz
GHz
GHz
GHz
fc
-
M=5, 10
-
M=20
M=3
-
3.0
3.0
3.0
-
-
-
-
160
70
C
-
340
85
C
Mulitiplied Dark Current
IDM
nA
25
C
10
1.5
M=1
Temperature Coefficient
of VB
V/
C
0.08
0.15
0.12
Note (1)
APD Breakdown Voltage
VB
V
40
60
50
ID = 10
A, 25C
Note 1:
=VB/dTc
3
Avalanche Photodiode
FPD5W1KX
Fig. 1 Responsivity vs. Wavelength
Fig. 2 Responsivity vs. Temperature
Responsivity, (A/W)
1400
1300
1450 1500 1550 1600 1650
1350
0.1
1.0
Wavelength,
(nm)
Temperature, Ta (
C)
Fig. 3 Dark Current vs. Reverse Voltage
Dark Current, I
D
(A)
50
40
30
20
10
60
0
10-10
10-12
10-11
10-7
10-6
10-5
10-4
10-9
10-8
Reverse Voltage, VR (V)
25
C
45
C
-40
C
-25
C
65
C
85
C
0
C
-40
C
Pin=2
W,
M=1
+85
C
+25
C
Responsivity, (A/W)
0
-50
50
100
0.0
0.2
0.4
0.6
0.8
1.0
1310nm
1480nm
1550nm
1600nm
1620nm
Pin=2
W,
M=1
Fig. 5 Multiplication Characteristics
Multiplication Factor, M
50
40
30
20
10
60
0
0.1
10
100
1
Reverse Voltage, VR (V)
-40
C
45
C
65
C
85
C
25
C
0
C
-25
C
=1550nm,
Pin=2
W
4
FPD5W1KX
10
100
0.1
1
Photocurrent at M=1, Ipo (
A)
Fig. 6 Multiplication Factor vs. Photocurrent
Multiplication Factor, M
Relative Response (dB/div.)
1
1000
100
10
0
1
2
3
Frequency (GHz)
Fig. 7A Frequency Response
(Air Gap ~ 2mm)
0.98VB
0.95VB
0.9VB
Mmax
M=5
M=3
M=2
M=15
M=20
M=10
Ta=25C,
= 1,550nm
Ta = 25C,
= 1,550nm,
Pin=2
W,
AC coupled,
RL = 50
10
100
0.1
1
Photocurrent at M=1, Ipo (
A)
Fig. 8 Cutoff Frequency vs. Multiplication Factor
Multiplication Factor, M
0.1
100
10
1
Air Gap=0mm
Air Gap=2mm
(Air Gap ~ 2mm)
PCB
Relative Response (dB/div.)
0
1
2
3
4
5
6
Frequency (GHz)
Fig. 7B Frequency Response
(Air Gap ~ 0mm)
M=5
M=3
M=2
M=15
M=20
M=10
Ta = 25C,
= 1,550nm,
Pin=2
W,
AC coupled,
RL = 50
Ta = 25C,
= 1,550nm,
Pin=2
W,
AC coupled,
RL = 50
(Air Gap ~ 0mm)
PCB
Avalanche Photodiode
5
FPD5W1KX
Ta = 25C
(%/C)
(V/C)
Fig. 10 Excess Noise Factor
vs. Multiplication Factor
Capacitance, C
t (pF)
1
0.1
0.5
1
5
100
50
10
5
Fig. 9 Temperature Coefficient
vs. Breakdown Voltage
Excess Noise Factor, F
50
10
100
5
2
50
0
5
10
20
Reverse Voltage, VR (V)
Fig. 11 Capacitance vs. Reverse Voltage
Temperature Coeffcient of VB
50
45
60
55
40
0.3
0.2
0.1
0
Breakdown Voltage, VB (V)
Multiplication Factor, M
Ta = 25C,
= 1,550nm,
Ipo = 2A,
f = 30 MHz,
B = 1 MHz
f = 1MHz
Avalanche Photodiode
6
FPD5W1KX
1
2
3
ANODE
CATHODE
CASE
4
2 - R 1.25
2 - C1.5
2.0
3.7
7.4
2
3
1
1000 MIN.
28 MAX.
17.0
2.54
17.0
6.0 MAX.
0.9
3-
0.35
12.7
7.4
10 MIN.
"KX" PACKAGE
UNIT: mm
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(GaAs) which can be hazardous to the human body and the environment.
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product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
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2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Avalanche Photodiode
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