1
FEATURES
Board mount type "GT" package: 17 pins
InGaAs-APD with pre-amplifier
Integrated Design Optimizes Performance at Bit Rates
up to 10.7Gb/s
Electrical Differential Output
High Sensitivity: -26.5dBm
Operates in both C and L wavelength bands
APPLICATIONS
This APD with preamplifier is intended to function as an optical
receiver at 1,310nm or 1,530-1,610nm in SONET, SDH, DWDM or other
optical fiber systems operating up to 10.7Gb/s. The typical transimpedance (Zt)
value of 1,200
optimizes the total bandwidth for 10Gb/s application.
The detector preamplifier is DC coupled and has an electrical differential output.
DESCRIPTION
The FRM5N141GT incorporates a high bandwidth InGaAs APD
photo diode, a GaAs amplifier in a hermetically sealed board mount type package.
The APD is processed with modern epitaxial techniques resulting in a reliable
performance over a wide range of operating conditions.
Edition 1.1
July 2004
InGaAs-APD/Preamp
Receiver
FRM5N141GT
Parameter
Symbol
Min.
Max.
Storage Temperature
Tstg
+85
C
Operating Temperature
+75
C
Top
Supply Voltage
0
V
Vss
APD Reverse Voltage
VB(Note)
V
VR
APD Reverse Current
4(peak)
-40
-5
-6
0
-
mA
IR
Ratings
Unit
ABSOLUTE MAXIMUM RATINGS (Tc=25C, unless otherwise specified)
Note: Since VB may vary from device-to-device, VB data is attached to each device for reference.
2
InGaAs-APD/Preamp
Receiver
FRM5N141GT
Parameter
OPTICAL & ELECTRICAL CHARACTERISTICS
(Tc=25C, =1,550nm, Vss=-5.2V, unless otherwise specified)
Unit
Limits
Max.
Min.
Typ.
Test Conditions
APD Responsivity
A/W
-
0.75
0.85
-
0.75
0.90
-
-
0.80
= 1,310nm, M=1
= 1,550nm, M=1
= 1,610nm, M=1
130MHz to 6GHz
130MHz to 8GHz
Output Return Loss
-
-
12
dB
-
-
7
Bandwidth
GHz
8.5
6.0
7.5
-
6.0
M=9
M=3
7.5
Lower Cut-off Frequency
-3dB from 750MHz, Pin=-20dBm
-3dB from 750MHz,
Pin=-20dBm
kHz
100
-
40
Peaking
130MHz to BW, Pin=-20dBm, M=9
dB
-
-
0.5
Group Delay Deviation
1GHz to 4GHz, Pin=-20dBm, M=9
1GHz to 6GHz, Pin=-20dBm, M=9
ps
p-p
-
-
30
-
-
50
Symbol
Power Supply Current
mA
110
130
-
-
-
-
-
Iss
Optical Return Loss
-
-
27
dB
-
-
27
ORL
Power Supply Voltage
V
-5.20
-4.94
-5.46
Vss
Thermistor Resistance
k
10.0
10.5
9.5
Rth
Thermistor B Constant
K
3900
4000
3800
B
R
Maximum Output
Voltage Swing
mV
550
750
350
Saturated Output Voltage
Vclip
Minimum Sensitivity
-
-26.5
-25.0
dBm
-
-25.5
-24.0
10Gb/s, NRZ,
PRBS=2
31
-1,
B.E.R.=10
-12
,
VR=Optimum,
Rext=13dB
25
C
75
C
= 1,550nm
= 1,310nm
Pr
10Gb/s, NRZ, PRBS=2
31
-1,
B.E.R.=10
-12
, M=3, Rext=13dB
Maximum Overload
-
-7
-5
dBm
Po
S22
BW
fcl
dpk
GD
AC Transimpedance
Zt
800
-
1200
f = 750MHz, Single-end
Temperature Coefficient
of VB
V/
C
0.03
0.07
0.05
Note (1)
APD Breakdown Voltage
VB
V
20.0
30.0
25.0
ID = 10
A
Note 1:
=VB/dTc
Note: All the parameters are measured with 50
load through external coupling capacitor.
4
InGaAs-APD/Preamp
Receiver
FRM5N141GT
# Symbol PIN DESIGNATIONS
1
GND
Case Ground
2
VPD PD
Bias
3 NC(NIC) NC(NIC)
4 VPreamp Preamp
Bias
5 NC(NIC) NC(NIC)
6
GND
Case
Ground
7
GND
Case
Ground
8
OUT
Output
(-)
9
GND
Case
Ground
10
OUT
Output (+)
11
GND
Case Ground
12
GND
Case Ground
13
OFFSET DC Offset Control
14 NC(NIC) NC(NIC)
15 NC(NIC) NC(NIC)
16
Rth
Thermistor for APD
NC(NIC) NC(NIC)
17
GND
Case Ground
L (Note )
28.0 MAX.
11.75
8.75
#7
#11
#12
#17
#6
#1
14.0
8.0
4.1
0.9
2.3
5.0 MAX.
Lead Detail (x4)
2.8
4-2.0
8-P1.0
10-0.3
0.9
7.4
2-0.75
0.3
2-0.2
2-0.6
NC (NIC): No Internal Connection
Note: The fiber length (L) shall be specified in the detail
(individual) specification.
"GT" PACKAGE
UNIT: mm
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put this product into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
2004 Eudyna Devices USA Inc.
Printed in U.S.A.
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