FEATURES
Data rate up to 622Mb/s
High Responsibility: typ. 0.85A/W at 1,550nm
30m active area APD chip with GaAs pre-amplifier
High temperature operation up to +85C
Small co-axial package with single mode fiber
APPLICATIONS
Medium bit rate long haul optical transmission systems
at STM-4 (OC-12)
DESCRIPTION
These APD preamplifiers use an InGaAs APD chip with
GaAs IC preamplifier. The KT package is designed for a
horizontal PC board mount. The LT package is secured by a
vertical flange. Each package is connected with
single-mode fiber by Nd: YAG welding. The detector
preamplifier is DC coupled and has a low electrical
output when the APD is illuminated.
Edition 1.0
March 1999
1
InGaAs-APD/Preamp
Receiver
FRM5W621KT/LT
KT
LT
Edition 1.0
March 1999
2
InGaAs-APD/Preamp
Receiver
FRM5W621KT/LT
Parameter
Storage Temperature
Operating Temperature
Supply Voltage
APD Supply Voltage
Symbol
Tstg
-40 to +85
-40 to +85
-7 to 0
0 to VB
V
V
C
C
Top
Vss
VR (Note 1)
APD Reverse Current
1.0
mA
IR (Note 2)
Ratings
Unit
ABSOLUTE MAXIMUM RATINGS (Tc=25C)
Parameter
APD Responsivity
APD Breakdown Voltage
Maximum Overload
Symbol
R15
R13
OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25C, =1,310/1,550nm, Vss=-5.2V, unless
otherwise specified)
VB
Bandwidth
Sensitivity
BW
Power Supply Current
Iss
Pr
Po
A/W
A/W
dBm
V
mA
Unit
MHz
V
dBm
Limits
-
-
-39
Max.
0.80
0.75
-
467
40
70
-
-41
dBm
-
-5
-
dBm
-
-7
-
-42
550
Equivalent Input
Noise Current Density
in
pA/ Hz
3.2
-
2.64
50
Temperature Coefficient of VB
V/
C
0.08
0.15
0.12
AC Transimpedance
Zt
k
3.0
-
3.8
0.85
0.85
-
-5.2
40
-
-
-
Min.
Typ.
-40
-
Test Conditions
1,550nm, M=1
1,310nm, M=1
Power Supply Voltage
Vss
-4.94
-5.46
Tc=-40 to +85
C
622Mb/s NRZ,
PRBS=2
23
-1,
B.E.R.=10
-10
,
VR is set at
optimum value
Tc=-40 to +85
C, M=3
622Mb/s NRZ, M=3,
PRBS=2
23
-1,
B.E.R.=10
-10
,
VR is set at
optimum value
AC-Coupled, RL=50
,
Average within BW
AC-Coupled, RL=50
,
M=3 to 15,
-3dBm from 1MHz
AC-Coupled, f=10MHz,
RL=50
,
Pin <=-20dBm,
(Note 3)
ID=10
A
Note: (1) VB differs from device to device. VB data is attached to each devices.
(2) CW condition
(3)
=dVB/dTC
Edition 1.0
March 1999
3
InGaAs-APD/Preamp
Receiver
FRM5W621KT/LT
Fig. 2 Relative Frequency Response
Relative Response (3dB/div)
Frequency, f (MHz)
1000
100
10
1
Ta = 25C
Vss=-5.2V
AC-Coupled
RL=
50
Pin=-40dBm
= 1,310/1,550nm
M = 10
Fig. 1 Output Characteristics
Output Voltage Peak to Peak, Vpp(V)
Average Photocurrent, Iave (
A)
0.4
100
0.2
50
0
0
0.6
0.8
Slope: Zt ~ 3.8k
Tc = 25C
Vss=-5.2V
CW condition
RL=
50
10MHz
Duty 50%
Mark density 50%
Fig.3 Equivalent Input Noise Current Density
Relative Input Noise Current Density,
in (pA/ Hz)
Frequency, f (MHz)
1000
100
10
1
5
10
Tc = 25C
Vss=-5.2V
AC-Coupled
RL=
50
Fig.4 Eye Diagram with a 1,550nm,
622Mb/s NRZ, 2
23
-1 PRBS incident signal
500ps/div
Input optical wave form with Bessel filter
Equivalent output wave form at
Pin=-42dBm, Tc=25
C, M=optimum
Edition 1.0
March 1999
4
InGaAs-APD/Preamp
Receiver
FRM5W621KT/LT
Fig.6 Bit Error Rate
Bit Error Rate
Received Optical Power (dBm)
-40
-35
Ta=+25
C
+85
C
-40
C
-45
-50
10
-12
10
-10
10
-8
10
-6
10
-4
=1,310/1,550nm
622Mb/s, NRZ
Vss=-5.2V
M=Optimum
Duty 50%
Mark Density 50%
Fig.5 Sensitivity
Minimum Sensivity, Pr (dBm)
Multiplication Factor, M
100
10
1
-45
-40
-35
Tc=25
C
VSS=-5.2V
AC-Coupled
RL=50
=1,310/1,550nm
2-C1.5
8.4
0.2
8.4
0.2
4.2
0.2
2.0
0.1
14.0
0.15
17.0
0.2
VR
OUT
GND
VSS
10.0 MIN
2.5
0.1
4.4 MAX
32.0 MAX
1000 MIN
4-0.45
0.05
6.0 MAX
7.2 MAX
0.9
0.1
GND
VSS
VR
OUT
P.C.D. 4.0
0.2
P.C.D. 2.0
0.2
"KT" PACKAGE
7.6 MAX
2.5
0.1
GND
VSS
VR
OUT
17.0
0.2
14.0
0.15
10.0 MIN
1.0
0.1
32.0 MAX
1000 MIN
P.C.D. 4.0
0.2
4-
0.45
0.05
P.C.D. 2.0
0.2
6.0 MAX
7.2 MAX
0.9
VR
OUT
GND
VSS
"LT" PACKAGE
UNIT: mm
UNIT: mm
Edition 1.0
March 1999
5
InGaAs-APD/Preamp
Receiver
FRM5W621KT/LT
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
Americas & R.O.W.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
55 Schanck Road,
Suite A-2
Freehold, NJ 07728-2964, U.S.A.
Phone: (732) 303-0282
FAX: (732) 431-3393
www.fcsi.fujitsu.com
FUJITSU MIKROELECTRONIK GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ, UK
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
FUJITSU QUANTUM DEVICES, LTD.
Asia & Japan
2-7-1, Nishi Shinjuku
Shinjuku-ku, Tokyo 163-0721
Japan
Phone: 3-5322-3356
FAX: 3-5322-3398
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put this product into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0199M200
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