1
Edition 1.2
July 1999
FSU01LG
General Purpose GaAs FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
12.0
-5
375
-65 to +175
175
Note
V
V
mW
C
C
Ptot
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
C)
Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 6 volts.
2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with
gate resistance of 2000
.
3. The operating channel temperature (Tch) should not exceed 145
C.
AVAILABLE CASE STYLES: LG
G.C.P.: Gain Compression Point
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Output Power at 1dB
Gain Compression Point
Power Gain at 1dB
Gain Compression Point
Symbol
IDSS
35
55
75
-
50
-
-0.7
-1.2
-1.7
-5
-
-
18.0
19.0
-
-
0.55
-
19.0
20.0
-
VDS = 3V, IDS = 2.7mA
VDS = 3V, IDS = 27mA
VDS = 3V, VGS = 0V
IGS = -2.7
A
Channel to Case
VDS = 6V
IDS
=
40mA
f = 2GHz
VDS = 3V
IDS
=
10mA
f = 2GHz
mA
mS
V
dB
dB
dBm
V
gm
Vp
VGSO
P1dB
G1dB
NF
Associated Gain
-
18.5
-
dB
Gas
Thermal Resistance
-
300
400
C/W
Rth
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
C)
Note: The RF parameters are measured on a lot basis by sample testing
at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested.
FEATURES
High Output Power: P1dB = 20.0dBm (Typ.)
High Associated Gain: G1dB = 19.0dB (Typ.)
Low Noise Figure:
NF=0.55dB (Typ.)@f=2GHz
Low Bias Conditions: VDS=3V, 10mA
Cost Effective Hermetic Microstrip Package
Tape and Reel Available
DESCRIPTION
The FSU01LG is a high performance, low noise, GaAs FET designed for
PCS/PCN applications as a driver in the 2GHz band.
Fujitsu's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
2
FSU01LG
General Purpose GaAs FET
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
200
100
400
300
0
50
100
150
200
Case Temperature (
C)
Total Power Dissipation (mW)
50
60
40
10
20
30
1
2
3
4
5
Drain-Source Voltage (V)
Drain Current (mA)
VGS =0V
-0.2V
-0.4V
-0.6V
-0.8V
-1.0V
-1.2V
NOISE FIGURE vs. DRAIN-SOURCE CURRENT
ASSOCIATED GAIN vs. DRAIN-SOURCE CURRENT
IDS
=
10mA
f = 2.0 GHz
10
20
30
40
Drain-Source Current (mA)
19.5
19.0
18.5
18.0
17.5
Associated Gain (dB)
5V
4V
2V
IDS
=
10mA
f = 2.0 GHz
10
20
30
40
Drain-Source Current (mA)
0.9
0.8
0.7
0.6
0.5
Noise Figure (dB)
VDS = 6V
VDS = 6V
5V
4V
2, 3V
3
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180
+90
0
-90
S21
S12
SCALE FOR |S21|
0.2
2
.05
0.1
1
3
4
0.4 GHz
0.4 GHz
2
2
2
2
1
1
1
1
3
3
3
3
250
100
10
25
50
4 GHz
4 GHz
4 GHz
4 GHz
0.4 GHz
SCALE FOR |S12|
0.4 GHz
S-PARAMETERS
VDS =6V, IDS = 40mA
FREQUENCY
S11
S21
S12
S22
(MHZ)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
400
.987
-13.8
4.507
168.3
.011
77.9
.812
-6.7
600
.985
-20.3
4.488
162.8
.016
76.2
.812
-10.0
800
.974
-27.1
4.421
157.0
.021
72.0
.807
-13.2
1000
.966
-34.1
4.367
151.3
.026
68.6
.803
-16.4
1200
.954
-40.0
4.309
146.4
.030
65.2
.793
-19.8
1400
.936
-47.0
4.212
140.5
.035
60.3
.786
-23.0
1600
.935
-53.3
4.158
135.2
.038
56.5
.778
-25.8
1800
.910
-58.7
4.037
130.8
.043
51.8
.766
-28.9
2000
.904
-65.4
3.980
125.2
.047
48.8
.761
-31.8
2200
.888
-71.0
3.885
120.7
.049
45.2
.748
-34.3
2400
.871
-77.0
3.797
115.5
.052
42.6
.739
-37.5
2600
.856
-82.5
3.696
110.9
.055
39.5
.729
-40.2
2800
.844
-88.1
3.609
106.2
.057
35.7
.716
-43.0
3000
.829
-93.3
3.511
101.9
.060
30.9
.704
-45.8
3200
.812
-98.4
3.400
97.7
.060
27.2
.692
-47.9
3400
.798
-103.1
3.323
93.8
.061
26.0
.687
-50.3
3600
.788
-107.9
3.249
89.7
.062
22.9
.681
-52.8
3800
.779
-112.6
3.176
85.6
.063
20.9
.674
-55.3
4000
.769
-117.3
3.101
81.7
.063
19.4
.668
-58.0
FSU01LG
General Purpose GaAs FET
Download S-Parameters, click here
4
OUTPUT POWER & IM3 vs. INPUT POWER
VDS = 6V
f = 2 GHz
f = +1 MHz
IDS = 40mA
-12 -10 -8
-6
-4
-2
0
2
4
6
Total Input Power (dBm)
18
20
16
14
12
10
8
6
4
2
0
-2
-4
-6
-20
-10
-30
-40
-50
-60
Total Output Power (dBm)
IM
3
(dBc)
Pout
IM3
2-Tone
Single Tone
FSU01LG
General Purpose GaAs FET
5
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
0.5
(0.02)
1.0
(0.039)
1.3 Max
(0.051)
0.1
(0.004)
1.5
0.3
(0.059)
1.78
0.15
(0.07)
1.5
0.3
(0.059)
4.78
0.5
Case Style "LG"
Metal-Ceramic Package
Unit: mm(inches)
1. Gate
2. Source
3. Drain
4. Source
1.5
0.3
(0.059)
1.78
0.15
(0.07)
1.5
0.3
(0.059)
4.78
0.5
Gold Plated Leads
1
2
3
4
FSU01LG
General Purpose GaAs FET
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