1
Edition 1.2
July 1999
FSX017LG
General Purpose GaAs FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
8
-5
220
-65 to +175
175
Note
V
V
mW
C
C
Ptot
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C)
Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
For reliable operation of this FET:
1. The drain - source operating voltage (VDS) should not exceed 4 volts.
2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with
gate resistance of 2000.
3. The operating channel temperature (Tch) should not exceed 145C.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
35
55
75
-
50
-
-0.7
-1.2
-1.7
-5
-
-
7.0
8.0
-
15.0
16.0
-
VDS = 3V, IDS = 2.7mA
VDS = 3V, IDS = 27mA
VDS = 3V, VGS = 0V
IGS = -2.7A
VDS = 4V
IDS = 30mA
f = 12GHz
mA
mS
V
dB
dBm
V
gm
Vp
VGSO
P1dB
G1dB
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
G.C.P.: Gain Compression Point
CASE STYLE: LG
Note: The RF parameters are measured on a lot basis by sample testing
at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested.
Channel to Case
Thermal Resistance
-
300
400
C/W
Rth
DESCRIPTION
The FSX017LG is a general purpose GaAs FET designed for medium
power applications up to 12GHz. These devices have a wide dynamic
range and are suitable for use in medium power, wide band, linear drive
amplifiers.
Fujitsu's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
Medium Power Output: P1dB = 16.0dBm (Typ.)@12.0GHz
High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz
Proven Reliability
Cost Effective Hermetic Microstrip Package
Tape and Reel Available
2
FSX017LG
General Purpose GaAs FET
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
200
100
50
150
250
50
60
40
10
20
30
0
50
100
150
200
1
2
3
4
5
6
Ambient Temperature (C)
Drain-Source Voltage (V)
Total Power Dissipation (mW)
Drain Current (mA)
VGS = 0V
-0.2V
-0.4V
-0.6V
-0.8V
-1.0V
-1.2V
OUTPUT POWER vs. INPUT POWER
VDS=4V
IDS = 30mA
f = 12GHz
0
1
2
3
9 10 11
4
5
6
7
8
14
15
16
17
13
12
11
10
9
30
20
10
Output Power (dBm)
add
Pout
add
(%)
4
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
0.5
(0.02)
1.0
(0.039)
1.3 Max
(0.051)
0.1
(0.004)
1.50.3
(0.059)
1.780.15
(0.07)
1.50.3
(0.059)
4.780.5
Case Style "LG"
Metal-Ceramic Hermetic Package
Unit: mm(inches)
1. Gate
2. Source
3. Drain
4. Source
1.5
0.3
(0.059)
1.78
0.15
(0.07)
1.5
0.3
(0.059)
4.78
0.5
1
2
3
4
FSX017LG
General Purpose GaAs FET
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