1
Edition 1.1
July 2004
Driver Integrated 10Gb/s
MI-DFB LD Module
FTM1141GF
Parameter
Condition
Symbol
Operating Case Temperature
Top(Tc)
C
Modulator (Mod) modulation
Control Voltage
Vm
V
Mod Bias Control Voltage
Vb
V
Power Supply Voltage
VSS
V
Laser Forward Current
If
mA
CW
Laser Reverse Voltage
VR
V
CW
Storage Temperature
Tstg
C
Differential
(AC-coupled)
Data Input Voltage
Din, DinB
Vpp
Note (1-1)
ESD Tolerance
Vesd
V
Note (1-2)
ESD Tolerance
Vesd
V
Photodiode Forward Current
IDF
mA
Photodiode Reverse Voltage
VDR
V
260
C MAX
Lead Soldering Time
sec
Cooling
Heating
TEC Voltage
Vc
V
Cooling
Heating
A
TEC Current
Ic
Tth
Thermistor Temperature
C
CW
Optical Output Power
Pf
mW
Unit
ABSOLUTE MAXIMUM RATINGS (Top=25
C, Unless otherwise specified)
Rating
0
-6.5
-6.5
-6.5
-
-
-40
-
-
-
-
-
-
ATC operation
-
-2.5
-
-0.9
0
-
Min.
VSS-4.8
(min-6.5)
Cross Point Control Voltage
Vx1,(Vx2)
V
75
VSS+1.2
(max0.3)
VSS+2.4
(max0.3)
0.3
150
2
85
1.6
50
200
1
10
10
2.5
-
1.5
-
+75
5
Max.
VSS+2.4
(max0.3)
FEATURES
Driver integrated 10Gb/s MI-DFB module for 800ps/nm
optical transmission
MI-DFB-LD (Modulator Integrated DFB Laser Diode) is included
Modulator driver IC is included
Built-in optical isolator, PIN-Photo diode for monitor, thermistor
and thermo-electric cooler
800ps/nm (40km)
DESCRIPTION
The FTM1141GF was developed to reduce the size and technical
complexity of 10Gb/s optical board designs. This product, which includes
a driver and modulator integrated laser in one package, eliminates the
customer concerns regarding how to handle the RF interfacing between
these two components on his board. By co-packaging these components
a solution has also been achieved that offers greatly reduced board space.
This reduction in space is critical for next generation transponder applications.
The FTM1141GF has been designed with a differential co-planar electrical interface
which allows for easy interfacing to RF lines on PC boards. The package and pinout are part of a
multi-source agreement. This product is designed for 40km SONET/SDM applications and single
channel drop links in DWDM systems.
Parameter
Limit
LASER DIODE AND MODULATOR CHARACTERSITICS
OPTICAL SPECIFICATIONS (TLD=25
C, Tc=0 to 75C and BOL, unless otherwise specified)
Unit
Symbol
Condition
Min.
Max.
Typ.
Optical Output Power
dBm
Pop
-1
+2
-
Note (2a)
Forward Voltage
V
VF
-
2.2
-
CW
Extinction Ratio
dB
Rext
8.2
-
-
Pf=Pop, Note (2a)
Peak Wavelength
nm
Wp
1530
1565
-
Pf=Pop, Note (2a)
Side Mode Suppresion
Ratio
dB
SSR
35
-
-
Pf=Pop, CW
Optical Rise Time
psec
tr
-
30
-
Note (3), 20% to 80%
Optical Fall Time
psec
tf
-
30
-
Note (3), 20% to 80%
Optical Isolation
dB
Is
25
-
-
Tracking Error
dB
TE
-0.5
+0.5
-
Note (2a)
Input Return Loss
dB
S11
6
-
10
130MHz to 10GHz, Tc=25
C
Dispersion Penalty
dB
dP
-
2.0
-
Note (2)
Eye Pattern Mask
Msk
Error
Free
Note (2a), 500 counts
CW
Threshold Current
Ith
mA
-
25
-
mA
Pf=Pop
Operating Current
Iop
40
100
70
Parameter
Limit
MONITOR DIODE CHARACTERISTICS
Unit
Symbol
Condition
Min.
Max.
Typ.
Monitor Diode Capacitance
pF
Ct
-
15
5
VDR=5V, f=1MHz
IF=Iop, VDR=5V
Monitor Current
Im
A
100
1500
-
nA
VDR=5V
Monitor Dark Current
Id
-
100
2
Parameter
Limit
TEC & THERMISTOR CHARACTERISTICS
Unit
Symbol
Condition
Min.
Max.
Typ.
TEC Power Consumption
W
Pc
-
3.5
-
Note (4)
Thermistor Resistance
k
K
Rth
-
-
10
TLD=25
C
Thermistor B Constant
B
3270
4000
3450
Note (4)
TEC Current
Ic
A
-
1.4
-
V
Note (4)
TEC Voltage
Vc
-
2.5
-
2
Driver Integrated 10Gb/s
MI-DFB LD Module
FTM1141GF
3
Driver Integrated 10Gb/s
MI-DFB LD Module
FTM1141GF
Parameter
Limit
DRIVER IC CHARACTERISTICS
Unit
Symbol
Condition
V
Vpp
Min.
Max.
Typ.
Modulator (Mod) Modulation
Control Voltage
V
Vm
VSS
VSS
+1.0
-
Mod Bias Control Voltage
V
Vb
VSS
VSS
+2.2
-
Differential (AC Coupled)
Data Input Voltage
Din, DinB
0.5
1.0
-
Xp=50%
Cross Point (XP) Control
Voltage
Vx1, (Vx2)
VSS
+0.8
VSS
+2.2
-
Driver IC Supply Voltage
VSS
V
-5.5
-5.0
-5.2
mA
Driver IC Supply Current
ISS
-
285
-
Note (1-1): Pin No. 3,4,5,6,7,9,11
Note (1-2): Pin No. 1,2,8,10,12-19
Note (2): Eudyna Test System
(a) Drive Condition
Bit Rate:
9.95328 Gb/s
Word Pattern:
PRBS=2
31
-1
Mark Density:
50%
Laser Bias Current:
Iop
Laser Temperature(TLD):
25
C
Eye Pattern Mask:
ITU-T Eye mask for STM-64
(b) Fiber Dispersion
800ps/nm
(c) Dispersion Penalty
Bit Error Rate=10
-12
Note (3): Eudyna Test System
Vb, Vm, Vx1(Vx2) is set to make Pop and Rext within the specification
Note (4): Eudyna Test System
Operating Case Temperature: Tc=+75
C
Laser Temperature:
25
C
Optical Output Power:
Pf=Pop, Note (2a)
Typical Output Waveform
Back to Back (with Filter)
9.95328Gb/s, NRZ, PRBS=2
31
-1, TLD=TC=25C
4
PD
PD
LD
NC
NC
TEC
GND
GND
Blocking
Capacitor
Ex. 0.1F
Din
GND
DinB
GND
Vx1
Vx2
Cross Point Control
Bias Voltage Control
Supply Voltage
Modulation Voltage Control
VSS
Vm
Vb
Ther r
TEC
Chip
Capacitor
0.1F
Chip
Capacitor
0.1F
Typical Application for Driver IC
For stable operation:
8-1. To prevent a dependence of "Cross point" on the supply voltage VSS,
(1) Use an external voltage source of -3.8V for "Vx2", or
(2) Control the voltage of "Vx1", so that the voltage difference "Vx1-Vx2" remain constant.
8-2. To prevent a dependence of "Modulation control voltage" on the supply voltage VSS,
control the voltage of "Vm", so that the difference "Vm-VSS" remain constant.
8-3. To prevent a dependence of "Bias control voltage" on the supply voltage VSS,
control the voltage of "Vb", so that the difference "Vb-VSS" remain constant.
Driver Integrated 10Gb/s
MI-DFB LD Module
FTM1141GF
5
14-0.3
6.00
0.25
5-0.15
0.08
4.95
22.0
18.0
12.0
35
1
0.9
0.1
5.20
0.25
4-2.6
0.2
NOTE: Pigtail length (L)
shall be specified in the
detail (individual) specification.
CONNECTOR
DETAIL-B
L
5.3
17.6
Detail A
Detail B
13.6
9.6
19
13
1
7
8
12
25.0
0.5
1.25
(3)
0.5
7.7
14-0.2
4.86
0.20
1.25
4.56
4.46
0.20
3.56
5-0.3
4-P1.0
4.00
0.25
Pin Description
1. Thermoelectric cooler(Anode, +)
2. Thermistor
3. VB: Modulator bias control voltage
4. Vm: Modulator modulation voltage control voltage
5. Vss: Driver IC supply voltage
6. Vx2: Cross point control voltage
7. Vx1: Cross point control voltage
8. Case Ground
9. DinB: Inverted data input voltage
10. Case Ground
11. Din: Data Input voltage
12. Case Ground
13. Monitor photo diode(Cathode)
14. Monitor photo diode(Anode)
15. Case Ground
16. LD Bias(Anode)
17. NC
18. NC
19. Thermoelectric cooler(Cathode, -)
12-P1.0
5.8
DETAIL-A
"GF" PACKAGE
UNIT: mm
Driver Integrated 10Gb/s
MI-DFB LD Module
FTM1141GF
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put this product into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
2004 Eudyna Devices USA Inc.
Printed in U.S.A.
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