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Электронный компонент: KP028J

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Technical Note
P0120008P
1W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Features
4
1
2
3
4
1
2
3
Up to 2.7 GHz frequency band
Web Site:
www.sei.co.jp/GaAsIC/
Beyond +28 dBm output power
Up to +43dBm Output IP3
High Drain Efficiency
12dB Gain at 2.1GHz
SOT-89 SMT Package
Low Noise Figure
Applications
Wireless communication system
Cellular, PCS, PHS, W-CDMA, WLAN
Description
P0120008P is a high performance GaAs MESFET housed in
a low-cost SOT-89 package. Our originally developed
"pulse-doped" channel structure has realized low distortion,
which leads to high IP3. The channel structure also achieved
an extremely low noise figure. The details about pulse-doped
FET channel are described in our products catalog.
Utilization of AuSn die attach has realized a low and stable
thermal resistance. The lead frame is plated with Sn-Bi to
make the device Pb-free.
SEI's long history of manufacturing has cultivated high
device reliability. The estimated MTTF of the FET is longer
than 15years at Tj of 150C. You can see the details in
Reliability and Quality Assurance.
Functional Diagram
Pin No.
Function
1 Input/Gate
2, 4
Ground
3 Output/Drain
Ordering Information
Part No
Description
Number
of devices
Container
P0120008P
GaAs Power FET
1000
7" Reel
KP028J
2.11-2.17GHz
Application Circuit
1
Anti-static
Bag
Absolute Maximum Ratings
(@Tc=25C)
Parameter Symbol
Value Units
Drain-Source Voltage
Vds
10
V
Gate-Source Voltage
Vgs
- 4
V
Drain Current
Ids
Idss
---
RF Input Power
(continuous)
Pin 20
(*)
dBm
Power Dissipation
Pt
2.77
W
Junction Temperature
Tj
150
(**)
C
Storage Temperature
Tstg
- 40 to +150
C
Tc: Case Temperature. Operating the device beyond any of these
values may cause permanent damage.
(*) Measured at 2.1GHz with our test fixture matched to IP3.
(**) Recommended Tj under operation is below 125C.
Electrical Specifications (@Tc=25C)
Values
Parameter Symbol
Test
Conditions
Min. Typ. Max.
Units
Saturated Drain Current
Idss
Vds=3V, Vg=0V
---
---
760
mA
Transconductance gm
Vds=8V, Ids=300mA
250
---
---
mS
Pinchoff Voltage
Vp
Vds=8V, Ids=30mA
- 3.0
---
- 1.7
V
Gate-Source Breakdown Voltage
|Vgs0|
Igso= - 30
A
3.0 --- --- V
DC
Thermal Resistance
Rth
Channel-Case
---
--- 45
C/W
Frequency f
2.7
GHz
Output Power
@ 1dB Gain Compression
P1dB
30
---
dBm
Small Signal Gain
G
12
---
dB
Output IP3
IP3
---
43
---
dBm
RF
Power Added Efficiency
add
Vds=8V
Ids=220mA
f=2.1GHz
---
53 --- %
-1-
Technical Note
P0120008P
1W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Typical Characteristics


















Vgs=0V
-2.0V
-1.5V
-1.0V
-0.5V
Vds (V)
1000
750
500
250
0 0
2
4
6
8
T
o
t
a
l P
o
w
e
r
D
i
s
s
ip
a
t
io
n
(
W
)
Tc (C)
3
4
2
1
0
0
50
100
150
200
D
r
ai
n
C
u
r
r
en
t
(
m
A
)
Transfer Curve
Power Derating Curve
0
2
4
6
8
0
2
4
6
8
T
o
t
a
l P
o
w
e
r
D
i
s
s
ip
a
t
io
n
(
W
)
Tc (C)
3
4
2
1
0
0
T
o
t
a
l P
o
w
e
r
D
i
s
s
ip
a
t
io
n
(
W
)
Tc (C)
3
4
2
1
0
0
50
100
150
200
D
r
ai
n
C
u
r
r
en
t
(
m
A
)
Transfer Curve
Power Derating Curve
Load-pull Characteristics (Typical Data)
Tc=25C, Vds=8V, Ids=220mA, Common Source, Zo=50
(Calibrated to device leads)


0
1.
0
1.
0
-1
.
0
10
.
0
10.0
-10
.0
5.
0
5.0
-5.
0
2.
0
2.
0
-2
.0
3.
0
3.0
-3.
0
4.
0
4.0
-4.
0
0.
2
0.2
-0.2
0.
4
0.4
-0
.4
0.
6
0.
6
-0
.6
0.
8
0.
8
-0
.8
S11
S22
1.2GHz
1.2GHz
2.4GHz
2.4GHz
0
1.
0
1.
0
-1
.
0
10
.
0
10.0
-10
.0
5.
0
5.0
-5.
0
2.
0
2.
0
-2
.0
3.
0
3.0
-3.
0
4.
0
4.0
-4.
0
0.
2
0.2
-0.2
0.
4
0.4
-0
.4
0.
6
0.
6
-0
.6
0.
8
0.
8
-0
.8
S11
S22
1.2GHz
1.2GHz
2.4GHz
2.4GHz
0
45
90
13
5
-180
-135
-9
0
-4
5
S21
S12
1.2GHz
1.2GHz
2.4GHz
2.4GHz
4.0
2.0
6.0
0
0
0.02
0.04 0.06
Scale for |S12|
Sc
a
l
e
f
o
r

|
S
21
|
0
45
90
13
5
-180
-135
-9
0
-4
5
S21
S12
1.2GHz
1.2GHz
2.4GHz
2.4GHz
4.0
2.0
6.0
0
0
0.02
0.04 0.06
Scale for |S12|
Sc
a
l
e
f
o
r

|
S
21
|

















Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-2-
Web Site:
www.sei.co.jp/GaAsIC/
Technical Note
P0120008P
1W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Tc=25C, Vds=8V, Ids=180mA, Common Source, Zo=50
(Calibrated to device leads)

0
1.
0
1.
0
-1
.
0
10
.
0
10.0
-10
.0
5.
0
5.0
-5.
0
2.
0
2.
0
-2
.0
3.
0
3.0
-3.
0
4.
0
4.0
-4.
0
0.
2
0.2
-0.2
0.
4
0.4
-0.
4
0.
6
0.
6
-0
.6
0.
8
0.
8
-0
.8
S11
S22
1.2GHz
1.2GHz
2.4GHz
2.4GHz
0
1.
0
1.
0
-1
.
0
10
.
0
10.0
-10
.0
5.
0
5.0
-5.
0
2.
0
2.
0
-2
.0
3.
0
3.0
-3.
0
4.
0
4.0
-4.
0
0.
2
0.2
-0.2
0.
4
0.4
-0.
4
0.
6
0.
6
-0
.6
0.
8
0.
8
-0
.8
S11
S22
1.2GHz
1.2GHz
2.4GHz
2.4GHz
0
45
90
135
-180
-1
35
-9
0
-4
5
S21
S12
1.2GHz
1.2GHz
2.4GHz
2.4GHz
2.0
4.0
6.0
0
0
0.02
0.04 0.06
Scale for |S12|
Sca
l
e f
o
r
|
S
21|
0
45
90
135
-180
-1
35
-9
0
-4
5
S21
S12
1.2GHz
1.2GHz
2.4GHz
2.4GHz
2.0
4.0
6.0
0
0
0.02
0.04 0.06
Scale for |S12|
Sca
l
e f
o
r
|
S
21|
Ids
Ids
=220mA Freq(GHz) S11 Mag
S11Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
1.2
0.741
-157.9
5.797
77.8
0.047
35.3
0.151
-131.4
1.4
0.740
-168.8
5.052
69.4
0.050
33.3
0.160
-140.8
1.6
0.740
-178.1
4.480
61.7
0.053
31.2
0.173
-147.8
1.8
0.737
173.7
4.025
54.4
0.056
29.1
0.183
-152.5
2.0
0.734
165.7
3.666
47.3
0.059
26.8
0.190
-157.5
2.2
0.730
158.1
3.367
40.4
0.063
24.2
0.197
-160.7
2.4
0.730
150.5
3.120
33.5
0.067
21.1
0.195
-166.7
=180mA Freq(GHz) S11 Mag
S11Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
1.2
0.741
-157.9
5.791
77.9
0.047
34.6
0.158
-137.1
1.4
0.739
-168.8
5.046
69.5
0.050
32.4
0.168
-146.2
1.6
0.738
-178.1
4.475
61.9
0.053
30.3
0.181
-152.8
1.8
0.736
173.7
4.022
54.6
0.056
28.1
0.190
-157.4
2.0
0.732
165.7
3.663
47.5
0.059
25.8
0.197
-162.2
2.2
0.728
158.1
3.364
40.7
0.063
23.2
0.203
-165.4
2.4
0.728
150.5
3.119
33.8
0.067
20.0
0.201
-171.5
[Note]
You can download the S-parameter list from our web site:
www.sei.co.jp/GaAsIC
/
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-3-
Web Site:
www.sei.co.jp/GaAsIC/
Technical Note
P0120008P
1W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Ids=220mA Ids=180mA
-100
-80
-60
-40
-20
0
20
40
60
80
-15
-10
-5
0
5
10
15
20
Po
u
t
(
d
B
m
)
Ga
i
n
(
d
B
)
IM
3
(
d
Bm
)
IP
3
(
d
Bm
)
IM
3
/
P
o
u
t
(
d
B
c
)

ad
d
(
%
)
Pin (dBm)
Pout
Gain
IP3
add
IM3
IM3/Pout
-100
-80
-60
-40
-20
0
20
40
60
80
-15
-10
-5
0
5
10
15
20
Po
u
t
(
d
B
m
)
Ga
i
n
(
d
B
)
IM
3
(
d
Bm
)
IP
3
(
d
Bm
)
IM
3
/
P
o
u
t
(
d
B
c
)

ad
d
(
%
)
Pin (dBm)
Pout
Gain
IP3
add
IM3
IM3/Pout
-100
-80
-100
-80
-60
-40
-20
0
20
40
60
80
-15
-10
-5
0
5
10
15
20
Po
u
t
(d
B
m
)
Ga
i
n
(
d
B
)
IM3
(
d
B
m
)
IP
3
(
d
Bm
)
IM3
/
P
o
u
t
(
d
B
c
)

ad
d
(
%
)
Pin (dBm)
Pout
Gain
IP3
add
IM3
IM3/Pout
-60
-40
-20
0
20
40
60
80
-15
-10
-5
0
5
10
15
20
Po
u
t
(d
B
m
)
Ga
i
n
(
d
B
)
IM3
(
d
B
m
)
IP
3
(
d
Bm
)
IM3
/
P
o
u
t
(
d
B
c
)

ad
d
(
%
)
Pin (dBm)
Pout
Gain
IP3
add
IM3
IM3/Pout
Device: P0120008P
Frequency: f1=2.1GHz f2=2.101GHz
Bias: Vds=8V, Ids=220mA
Source Matching: Mag 0.75 Ang -169.5
Load Matching: Mag 0.36 Ang 175.9
Device: P0120008P
Frequency: f1=2.1GHz f2=2.101GHz
Bias: Vds=8V, Ids=180mA
Source Matching: Mag 0.75 Ang -169.5
Load Matching: Mag 0.32 Ang 144.6



















[Note] P
out
and
add
are measured by one signal.
The data for the figures above were measured with the load impedance matched to IP3.




















Id=220mA
Pin
(dBm)
Pout
(dBm)
Gain
(dB)
IM3
(dBm)
IM3/Pout
(dBc)
IP3
(dBm)
Id
(mA)
add
(%)
-10.0
4.4
14.4
-68.1
-72.5
40.6
178.4
0.2
-5.0
9.5
14.5
-57.4
-66.8
42.9
173.4
0.6
0.0
14.5
14.5
-41.8
-56.3
42.7
165.8
2.0
5.0
19.5
14.5
-25.5
-45.0
41.8
162.8
6.6
10.0
24.5
14.5
-2.4
-26.8
37.4
170.3
19.8
15.0
29.3
14.3
13.8
-15.5
34.6
202.3
50.6
Id=180mA
Pin
(dBm)
Pout
(dBm)
Gain
(dB)
IM3
(dBm)
IM3/Pout
(dBc)
IP3
(dBm)
Id
(mA)
add
(%)
-10.0
4.4
14.4
-66.3
-70.7
39.9
164.9
0.2
-5.0
9.5
14.5
-56.0
-65.5
42.3
159.6
0.7
0.0
14.6
14.6
-41.4
-56.0
42.6
151.8
2.3
5.0
19.6
14.6
-23.7
-43.3
41.3
147.5
7.5
10.0
24.6
14.6
0.8
-23.8
36.0
156.1
22.2
15.0
29.3
14.3
13.6
-15.7
34.6
189.3
53.6
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-4-
Web Site:
www.sei.co.jp/GaAsIC/
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-5-
Technical Note
P0120008P
1W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC

Tc=25C, Vds=8V, Ids=220mA, Pin=0d Bm
[Pout-Lstate]
f = 2.1GHz
pout
: 0.55
130.6
Source : 0.75
-169.5
Pout max : 14.9d Bm
[IP3-Lstate]
f1 = 2.1GHz
f2 = 2.101GHz
IP3
: 0.36
175.9
Source : 0.75
-169.5
IP3 max : 41.5d Bm
Tc=25C, Vds=8V, Ids=180mA, Pin=0d Bm
[Pout-Lstate]
f = 2.1GHz
pout
: 0.55
133.1
Source : 0.75
-169.5
Pout max : 15.0d Bm
[IP3-Lstate]
f1 = 2.1GHz
f2 = 2.101GHz
IP3
: 0.32
144.6
Source : 0.75
-169.5
IP3 max : 41.0d Bm
+j25
+j50
+j100
100
50
25
-j25
-j50
-j100
13.65
14.9
+j100
100
+j50
+j25
25
50
-j25
-j50
-j100
13.75
15.0
+j25
+j50
+j100
100
50
25
-j25
-j50
-j100
41.0
38.5
100
-j100
-j50
-j25
+j25
+j50
+j100
41.5
40.25
25
50