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Электронный компонент: P0120002P

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Technical Note
P0120002P
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Features
Web Site:
www.sei.co.jp/GaAsIC/
Up to 2.7 GHz frequency band
Beyond +22 dBm output power
Up to +41dBm Output IP3
High Drain Efficiency
15dB Gain at 2.1GHz
SOT-89 SMT Package (Pb-free)
Low Noise Figure
Applications
Wireless communication system
Cellular, PCS, PHS, W-CDMA, WLAN
Description
P0120002P is a high performance GaAs MESFET housed in
a low-cost SOT-89 package. Our originally developed
"pulse-doped" channel structure has realized low distortion,
which leads to high IP3. The channel structure also achieved
an extremely low noise figure. The details about pulse-doped
FET channel are described in our products catalog.
Utilization of AuSn die attach has realized a low and stable
thermal resistance. The lead frame is plated with Sn-Bi to
make the device Pb-free.
SEI's long history of manufacturing has cultivated high
device reliability. The estimated MTTF of the FET is longer
than 15years at Tj of 150C. You can see the details in
Reliability and Quality Assurance.
Functional Diagram
4
1
2
3
Pin No.
Function
1 Input/Gate
2, 4
Ground
3 Output/Drain
Ordering Information
Part No
Description
Number
of devices
Container
P0120002P
GaAs Power FET
1000
7" Reel
KP022J
2.11-2.17GHz
Application Circuit
1
Anti-static
Bag
Absolute Maximum Ratings
(@Tc=25C)
Parameter Symbol
Value Units
Drain-Source Voltage
Vds
8
V
Gate-Source Voltage
Vgs
- 4
V
Drain Current
Ids
Idss
---
RF Input Power
(continuous)
Pin 13
(*)
dBm
Power Dissipation
Pt
1.7
W
Junction Temperature
Tj
125
C
Storage Temperature
Tstg
- 40 to +125
C
Tc: Case Temperature. Operating the device beyond any of these
values may cause permanent damage.
(*) Measured at 2.1GHz with our test fixture matched to IP3.
Electrical Specifications (@Tc=25C)
Values
Parameter Symbol
Test
Conditions
Min. Typ. Max.
Units
Saturated Drain Current
Idss
Vds=3V, Vg=0V
---
---
300
mA
Transconductance gm
Vds=6V, Ids=100mA
90
---
---
mS
Pinchoff Voltage
Vp
Vds=6V, Ids=10mA
- 3.0
---
- 1.7
V
Gate-Source Breakdown Voltage
|Vgs0|
Igso= - 10
A
3.0 --- --- V
DC
Thermal Resistance
Rth
Channel-Case
---
--- 60
C/W
Frequency f
2.7
GHz
Output Power
@ 1dB Gain Compression
P1dB ---
24
---
dBm
Small Signal Gain
G
---
15
---
dB
Output IP3
IP3
---
41
---
dBm
RF
Power Added Efficiency
add
Vds=6V
Ids=80mA
f=2.1GHz
---
50 --- %
-1-
Technical Note
P0120002P
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Typical Characteristics
Power Derating Curve
Transfer Curve
Power Derating Curve
Transfer Curve
3
2
1
0
0
50
100
150
200
Tc (C)
Dr
a
i
n
C
u
r
r
e
n
t

(
m
A)
400
300
200
100
0
0
2
4
6
Vds (V)
Vgs=0V
-0.5V
-1.0V
-1.5V
-2.0V
T
o
ta
l
P
o
w
e
r

D
i
s
p
a
tion
(
W
)
S-parameters (Typical Data)
Tc=25C, Vds=6V, Ids=100mA, Common Source, Zo=50
(Calibrated to device leads)


0
1.
0
1.
0
-1
.
0
10
.
0
10.0
-10
.0
5.
0
5.0
-5.
0
2.
0
2.
0
-2
.0
3.
0
3.0
-3.
0
4.
0
4.0
-4.
0
0.
2
0.2
-0.2
0.
4
0.4
-0
.4
0.
6
0.
6
-0
.6
0.
8
0.
8
-0
.8
S11
S22
1.2GHz
1.2GHz
2.4GHz
2.4GHz
1.
0
1.
0
-1
.
0
10
.
0
10.0
-10
.0
5.
0
5.0
-5.
0
2.
0
2.
0
-2
.0
3.
0
3.0
-3.
0
4.
0
4.0
-4.
0
0.
2
0.2
-0.2
0.
4
0.4
-0
.4
0.
6
0.
6
-0
.6
0.
8
0.
8
-0
.8
S11
S22
1.2GHz
1.2GHz
2.4GHz
2.4GHz
S
c
al
e f
o
r

|
S
2
1
|
Scale for |S12|
1.2GHz
S21
1.2GHz
2.4GHz
2.4GHz
0
45
90
13
5
-180
-1
35
-9
0
-4
5
S12
0.02
0.04
0.06
0
0
2.0
4.0
6.0
S
c
al
e f
o
r

|
S
2
1
|
Scale for |S12|
1.2GHz
S21
1.2GHz
2.4GHz
2.4GHz
0
45
90
13
5
-180
-1
35
-9
0
-4
5
S12
0.02
0.04
0.06
0
0
2.0
4.0
6.0
















Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-2-
Web Site:
www.sei.co.jp/GaAsIC/
Technical Note
P0120002P
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Tc=25C, Vds=6V, Ids=80mA, Common Source, Zo=50
(Calibrated to device leads)

0
1.
0
1.
0
-1
.
0
10
.
0
10.0
-10
.0
5.
0
5.0
-5.
0
2.
0
2.
0
-2
.0
3.
0
3.0
-3.
0
4.
0
4.0
-4.
0
0.
2
0.2
-0.2
0.
4
0.4
-0
.4
0.
6
0.
6
-0
.6
0.
8
0.
8
-0
.8
S11
S22
1.2GHz
1.2GHz
2.4GHz
2.4GHz
0
1.
0
1.
0
-1
.
0
10
.
0
10.0
-10
.0
5.
0
5.0
-5.
0
2.
0
2.
0
-2
.0
3.
0
3.0
-3.
0
4.
0
4.0
-4.
0
0.
2
0.2
-0.2
0.
4
0.4
-0
.4
0.
6
0.
6
-0
.6
0.
8
0.
8
-0
.8
S11
S22
1.2GHz
1.2GHz
2.4GHz
2.4GHz
0
45
90
13
5
-180
-13
5
-9
0
-45
Sc
a
l
e
fo
r

|
S
2
1
|
Scale for |S12|
1.2GHz
S21
1.2GHz
2.4GHz
2.4GHz
S12
0.02
0.04
0.06
0
2.0
4.0
6.0
0
0
45
90
13
5
-180
-13
5
-9
0
-45
Sc
a
l
e
fo
r

|
S
2
1
|
Scale for |S12|
1.2GHz
S21
1.2GHz
2.4GHz
2.4GHz
S12
0.02
0.04
0.06
0
2.0
4.0
6.0
0
Ids=100mA Freq(GHz) S11 Mag
S11 Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
1.2
0.861
-102.8
6.088
107.4
0.037
37.7
0.463
-40.9
1.4
0.842
-117.4
5.659
97.5
0.039
31.5
0.442
-45.9
1.6
0.830
-130.3
5.264
88.5
0.041
25.8
0.423
-50.0
1.8
0.820
-141.7
4.892
80.2
0.043
20.7
0.412
-53.4
2.0
0.810
-152.1
4.592
72.4
0.044
16.2
0.398
-58.1
2.2
0.801
-161.6
4.350
64.8
0.046
11.5
0.380
-62.1
2.4
0.789
-171.1
4.139
57.3
0.048
6.4
0.360
-66.0
Ids=80mA
Freq(GHz) S11 Mag
S11 Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
1.2
0.861
-102.2
6.066
107.7
0.039
37.2
0.462
-41.9
1.4
0.843
-116.7
5.645
97.8
0.042
30.5
0.440
-47.0
1.6
0.830
-129.6
5.256
88.7
0.044
24.7
0.419
-51.2
1.8
0.820
-141.1
4.885
80.4
0.046
19.5
0.407
-54.7
2.0
0.809
-151.5
4.589
72.6
0.047
14.7
0.392
-59.4
2.2
0.800
-161.0
4.347
65.0
0.049
9.9
0.374
-63.3
2.4
0.788
-170.5
4.138
57.6
0.051
4.8
0.352
-67.2
[Note]
You can download the S-parameter list from our web site:
www.sei.co.jp/GaAsIC
/
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-3-
Web Site:
www.sei.co.jp/GaAsIC/
Technical Note
P0120002P
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Ids=100mA Ids=80mA
Device: P0120002P
Frequency: f1=2.1GHz, f2=2.101GHz
Bias: Vds=6V, Ids=100mA
Source Matching: Mag 0.71 Ang 131.9
Load Matching: Mag 0.27 Ang 87.0
Device: P0120002P
Frequency: f1=2.1GHz, f2=2.101GHz
Bias: Vds=6V, Ids=80mA
Source Matching: Mag 0.71 Ang 131.9
Load Matching: Mag 0.35 Ang 90.9
-100
-80
-60
-40
-20
0
20
40
60
80
-20
-15
-10
-5
0
5
10
15
20
Po
u
t
(
d
B
m
)
Ga
i
n
(
d
B
)
IM
3
(
d
B
m
)
IP
3
(
d
B
m
)
IM
3
/
P
o
u
t
(
d
B
c
)
ad
d
(
%
)
Pin (dBm)
Gain
IP3
add
IM3
IM3/Pout
-100
-80
-60
-40
-20
0
20
40
60
80
-20
-15
-10
-5
0
5
10
15
20
Po
u
t
(
d
B
m
)
Ga
i
n
(
d
B
)
IM
3
(
d
B
m
)
IP
3
(
d
B
m
)
IM
3
/
P
o
u
t
(
d
B
c
)
ad
d
(
%
)
Pin (dBm)
G ain
IP3
add
IM3
IM3/Pout
-100
-80
-60
-40
-20
0
20
40
60
80
-20
-15
-10
-5
0
5
10
15
20
Po
u
t
(
d
B
m
)
Ga
i
n
(
d
B
)
IM
3
(
d
B
m
)
IP
3
(
d
B
m
)
IM
3
/
P
o
u
t
(
d
B
c
)
ad
d
(
%
)
Pin (dBm)
Pout
G ain
IP3
add
IM3
IM3/Pout
-100
-80
-60
-40
-20
0
20
40
60
80
-20
-15
-10
-5
0
5
10
15
20
Po
u
t
(
d
B
m
)
Ga
i
n
(
d
B
)
IM
3
(
d
B
m
)
IP
3
(
d
B
m
)
IM
3
/
P
o
u
t
(
d
B
c
)
ad
d
(
%
)
Pin (dBm)
Pout
G ain
IP3
add
IM3
IM3/Pout
Pout
G ain
IP3
add
IM3
IM3/Pout
Pout
G ain
IP3
add
IM3
IM3/Pout




















[Note] P
out
and
add
are measured by one signal.
The data for the figures above were measured with the load impedance matched to IP3.
Id=100mA
Pin
(dBm)
Pout
(dBm)
Gain
(dB)
IM3
(dBm)
IM3/Pout
(dBc)
IP3
(dBm)
Id
(mA)
add
(%)
-15.0
0.3
15.3
-73.7
-74.0
37.3
98.1
0.2
-10.0
5.7
15.7
-65.9
-71.7
41.6
96.4
0.6
-5.0
10.8
15.8
-61.4
-72.2
46.8
93.6
2.1
0.0
15.8
15.8
-28.2
-44.0
37.8
88.6
7.0
5.0
20.9
15.9
0.2
-20.7
29.9
85.9
23.2
10.0
24.6
14.6
16.1
-8.5
23.6
93.7
49.0
15.0
25.6
10.6
20.6
-5.0
21.5
105.7
52.5
Id=80mA
Pin
(dBm)
Pout
(dBm)
Gain
(dB)
IM3
(dBm)
IM3/Pout
(dBc)
IP3
(dBm)
Id
(mA)
add
(%)
-15.0
0.2
15.2
-76.1
-76.3
38.3
78.5
0.2
-10.0
5.6
15.6
-66.9
-72.5
42.0
76.8
0.8
-5.0
10.7
15.7
-50.5
-61.2
41.0
74.1
2.6
0.0
15.8
15.8
-24.1
-39.8
35.4
69.5
8.8
5.0
21.1
16.1
4.1
-17.0
27.7
70.5
29.4
10.0
24.1
14.1
17.5
-6.7
21.3
80.4
51.6
15.0
25.0
10.0
19.8
-5.2
21.0
90.0
52.2





















Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-4-
Web Site:
www.sei.co.jp/GaAsIC/
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-5-
Technical Note
P0120002P
250mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Tc=25C, Vds=6V, Ids=100mA, Pin=-5dBm
[Pout-Lstate]
f = 2.1GHz
pout
: 0.73
85.8
Source : 0.79
160.5
Pout max : 15.75dBm
[IP3-Lstate]
f1 = 2.1GHz
f2 = 2.101GHz
IP3
: 0.27
87.0
Source : 0.71
131.9
IP3 max : 45.75d Bm
Tc= 25C, Vds=6V, Ids=80mA , Pin=-5d Bm
[Pout-Lstate]
f = 2.1GHz
pout
: 0.74
89.0
Source : 0.79
160.5
Pout max : 16.05dBm
[IP3-Lstate]
f1 = 2.1GHz
f2 = 2.101GHz
IP3
: 0.35
90.9
Source : 0.71
131.9
IP3 max : 40.95d Bm
+j100
+j50
+j25
-j25
-j50
-j100
100
50
25
45.75
44.7543.75
40.75
41.75
42.75
38.45
39.45
38.95
40.95
39.95
40.45
+j25
+j50
+j100
-j100
-j50
-j25
25
50
100
38.45
39.45
38.95
40.95
39.95
40.45
+j25
+j50
+j100
-j100
-j50
-j25
25
50
100
14.5
15.0
14.75
15.75
15.25
15.5
+j25
+j50
+j100
-j100
-j50
-j25
25
50
100
14.8
15.3
15.05
16.05
15.55
15.8
+j25
+j50
+j100
-j100
-j50
-j25
25
50
100
14.8
15.3
15.05
16.05
15.55
15.8
+j25
+j50
+j100
-j100
-j50
-j25
25
50
100