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Электронный компонент: P0120009P

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Technical Note
P0120009P
2W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Features
4
1
2
3
4
1
2
3
Up to 2.7 GHz frequency band
Web Site:
www.sei.co.jp/GaAsIC/
Beyond +31 dBm output power
Up to +48dBm Output IP3
High Drain Efficiency
11dB Gain at 2.1GHz
SOT-89 SMT Package
Low Noise Figure
Applications
Wireless communication system
Cellular, PCS, PHS, W-CDMA, WLAN
Description
P0120009P is a high performance GaAs MESFET housed in
a low-cost SOT-89 package. Our originally developed
"pulse-doped" channel structure has realized low distortion,
which leads to high IP3. The channel structure also achieved
an extremely low noise figure. The details about pulse-doped
FET channel are described in our products catalog.
Utilization of AuSn die attach has realized a low and stable
thermal resistance. The lead frame is plated with Sn-Bi to
make the device Pb-free.
SEI's long history of manufacturing has cultivated high
device reliability. The estimated MTTF of the FET is longer
than 15years at Tj of 150C. You can see the details in
Reliability and Quality Assurance.
Functional Diagram
Pin No.
Function
1 Input/Gate
2, 4
Ground
3 Output/Drain
Ordering Information
Part No
Description
Number
of devices
Container
P0120009P
GaAs Power FET
1000
7" Reel
KP029J
2.11-2.17GHz
Application Circuit
1
Anti-static
Bag
Absolute Maximum Ratings
(@Tc=25C)
Parameter Symbol
Value
Units
Drain-Source Voltage
Vds
10
V
Gate-Source Voltage
Vgs
- 4
V
Drain Current
Ids
Idss
---
RF Input Power
(continuous)
Pin 23
(*)
dBm
Power Dissipation
Pt
5.43
W
Junction Temperature
Tj
150
(**)
C
Storage Temperature
Tstg
- 40 to +150
C
Tc: Case Temperature. Operating the device beyond any of these
values may cause permanent damage.
(*) Measured at 2.1GHz with our test fixture matched to IP3.
(**) Recommended Tj under operation is below 125C.
Electrical Specifications (@Tc=25C)
Values
Parameter Symbol
Test
Conditions
Min. Typ. Max.
Units
Saturated Drain Current
Idss
Vds=3V, Vg=0V
---
---
1400
mA
Transconductance gm
Vds=8V, Ids=400mA
450
---
---
mS
Pinchoff Voltage
Vp
Vds=8V, Ids=50mA
- 3.0
---
- 1.7
V
Gate-Source Breakdown Voltage
|Vgs0|
Igso= - 50
A
3.0 --- --- V
DC
Thermal Resistance
Rth
Channel-Case
---
--- 22
C/W
Frequency f
2.7
GHz
Output Power
@ 1dB Gain Compression
P1dB
33
---
dBm
Small Signal Gain
G
11
---
dB
Output IP3
IP3
---
48
---
dBm
RF
Power Added Efficiency
add
Vds=8V
Ids=400mA
f=2.1GHz
---
57 --- %
-1-
Technical Note
P0120009P
2W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Typical Characteristics
W
)
W
)
W
)
a
t
io
n
a
t
io
n
a
t
io
n
D
i
s
s
D
i
s
s
D
i
s
s
l P
o
w
l P
o
w
l P
o
w
T
o
t
T
o
t
T
o
t
Vgs=0V
-2.0V
-1.5V
-1.0V
-0.5V
D
r
a
i
n
C
u
rr
e
n
t (m
A
)
Vds (V)
1500
1000
500
0
Vgs=0V
-2.0V
-1.5V
-1.0V
-0.5V
D
r
a
i
n
C
u
rr
e
n
t (m
A
)
Vds (V)
1500
1000
500
0
0
2
4
6
a
e
r
ip
(
Case Temperature
(C)
6
5
4
3
2
1
0 0
50
100
150
200
Transfer Curve
Power Derating Curve
0
2
4
6
a
e
r
ip
(
Case Temperature
(C)
0
2
4
6
a
e
r
ip
(
Case Temperature
(C)
6
6
5
4
3
2
1
0 0
50
100
150
200
Transfer Curve
Power Derating Curve
8
8
8
Load-pull Characteristics (Typical Data)
Tc=25C, Vds=8V, Ids=400mA, Common Source, Zo=50
(Calibrated to device leads)










0








1.0
1.0
-1
.0
10
.0
10.0
-10
.0
5.0
5.0
-5.
0
2.0
2.
0
-2
.0
3.
0
3.0
-3.
0
4.
0
4.0
-4.
0
0.2
0.2
-0.2
0.4
0.4
-0
.4
0.6
0.
6
-0
.6
0.8
0.
8
-0
.8
S11
S22
1.2GHz
1.2GHz
2.4GHz
2.4GHz
0
45
90
135
-180
-1
35
-9
0
-4
5
S12
S21
1.2GHz
1.2GHz
2.4GHz
2.4GHz
2.0
6.0
4.0
0
0
0.02
0.06
0.04
Scale for |S12|
Sca
l
e f
o
r
|
S
21|
0
45
90
135
-180
-1
35
-9
0
-4
5
S12
S21
1.2GHz
1.2GHz
2.4GHz
2.4GHz
2.0
6.0
4.0
0
0
0.02
0.06
0.04
Scale for |S12|
Sca
l
e f
o
r
|
S
21|
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-2-
Web Site:
www.sei.co.jp/GaAsIC/
Technical Note
P0120009P
2W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Tc=25C, Vds=8V, Ids=350mA, Common Source, Zo=50
(Calibrated to device leads)

0
1.0
1.0
-1.0
10.0
10.0
-10
.0
5.0
5.0
-5.
0
2.0
2.
0
-2
.0
3.0
3.0
-3.
0
4.0
4.0
-4.
0
0.2
0.2
-0.2
0.4
0.4
-0
.4
0.6
0.
6
-0
.6
0.8
0.
8
-0
.8
S11
S22
1.2GHz
1.2GHz
2.4GHz
2.4GHz
0
1.0
1.0
-1.0
10.0
10.0
-10
.0
5.0
5.0
-5.
0
2.0
2.
0
-2
.0
3.0
3.0
-3.
0
4.0
4.0
-4.
0
0.2
0.2
-0.2
0.4
0.4
-0
.4
0.6
0.
6
-0
.6
0.8
0.
8
-0
.8
S11
S22
1.2GHz
1.2GHz
2.4GHz
2.4GHz
0
45
90
135
-180
-1
35
-90
-4
5
S21
S12
1.2GHz
1.2GHz
2.4GHz
2.4GHz
2.0
4.0
6.0
0
0
0.02
0.04
0.06
Scale for |S12|
Sc
a
l
e
f
o
r
|
S
21
|
0
45
90
135
-180
-1
35
-90
-4
5
S21
S12
1.2GHz
1.2GHz
2.4GHz
2.4GHz
2.0
4.0
6.0
0
0
0.02
0.04
0.06
Scale for |S12|
Sc
a
l
e
f
o
r
|
S
21
|
Ids
Ids
=400mA Freq(GHz) S11 Mag
S11Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
1.2
0.807
176.1
4.225
66.1
0.042
31.9
0.380
176.7
1.4
0.812
167.5
3.630
58.4
0.045
30.5
0.387
173.2
1.6
0.815
159.8
3.179
51.2
0.048
29.2
0.394
170.0
1.8
0.819
152.8
2.826
44.3
0.050
27.5
0.399
166.9
2.0
0.822
146.1
2.545
37.4
0.053
25.1
0.403
163.4
2.2
0.823
139.6
2.316
30.7
0.056
22.6
0.406
159.8
2.4
0.827
133.4
2.124
24.0
0.060
19.5
0.408
155.7
=350mA Freq(GHz) S11 Mag
S11Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
1.2
0.808
176.0
4.203
66.2
0.044
31.0
0.400
175.6
1.4
0.812
167.2
3.612
58.5
0.047
29.6
0.407
171.8
1.6
0.818
159.5
3.162
51.4
0.049
28.3
0.414
168.6
1.8
0.821
152.5
2.811
44.4
0.052
26.5
0.417
165.3
2.0
0.823
145.8
2.533
37.6
0.055
24.0
0.422
161.6
2.2
0.824
139.2
2.303
30.9
0.058
21.4
0.423
157.9
2.4
0.828
133.0
2.113
24.2
0.061
18.2
0.427
153.3
[Note]
You can download the S-parameter list from our web site:
www.sei.co.jp/GaAsIC
/
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-3-
Web Site:
www.sei.co.jp/GaAsIC/
Technical Note
P0120009P
2W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Ids=400mA Ids=350mA
-100
-80
-60
-40
-20
0
20
40
60
80
-15
-10
-5
0
5
10
15
20
25
Po
u
t
(
d
B
m
)
Ga
i
n
(
d
B
)
IM3
(
d
Bm
)
IP
3
(
d
B
m
)
IM
3
/
P
o
u
t
(
d
B
c
)

ad
d
(
%
)
Pin (dBm)
Pout
Gain
IP3
add
IM3
IM3/Pout
-100
-80
-60
-40
-20
0
20
40
60
80
-15
-10
-5
0
5
10
15
20
25
Po
u
t
(
d
B
m
)
Ga
i
n
(
d
B
)
IM3
(
d
Bm
)
IP
3
(
d
B
m
)
IM
3
/
P
o
u
t
(
d
B
c
)

ad
d
(
%
)
Pin (dBm)
Pout
Gain
IP3
add
IM3
IM3/Pout
-100
-80
-60
-40
-20
0
20
40
60
80
-15
-10
-5
0
5
10
15
20
25
Po
u
t
(d
B
m
)
Ga
i
n
(
d
B
)
IM3
(
d
Bm
)
IP
3
(
d
B
m
)
IM
3
/
P
o
u
t
(
d
B
c
)

ad
d
(
%
)
Pin (dBm)
Pout
Gain
IP3
add
IM3
IM3/Pout
-100
-80
-60
-40
-20
0
20
40
60
80
-15
-10
-5
0
5
10
15
20
25
Po
u
t
(d
B
m
)
Ga
i
n
(
d
B
)
IM3
(
d
Bm
)
IP
3
(
d
B
m
)
IM
3
/
P
o
u
t
(
d
B
c
)

ad
d
(
%
)
Pin (dBm)
Pout
Gain
IP3
add
IM3
IM3/Pout
Device: P0120009P
Frequency: f1=2.1GHz f2=2.101GHz
Bias: Vds=8V, Ids=400mA
Source Matching: Mag 0.74 Ang -156.6
Load Matching: Mag 0.554 Ang 171.5
Device: P0120009P
Frequency: f1=2.1GHz f2=2.101GHz
Bias: Vds=8V, Ids=350mA
Source Matching: Mag 0.74 Ang 156.6
Load Matching: Mag 0.49 Ang 172.9



















[Note] P
out
and
add
are measured by one signal.
The data for the figures above were measured with the load impedance matched to IP3.
Id=400mA
Pin
(dBm)
Pout
(dBm)
Gain
(dB)
IM3
(dBm)
IM3/Pout
(dBc)
IP3
(dBm)
Id
(mA)
add
(%)
-10.0
2.8
12.8
-72.9
-75.7
40.6
401.3
0.1
-5.0
7.8
12.8
-68.6
-76.3
45.7
397.0
0.2
0.0
12.7
12.7
-57.7
-70.3
47.8
387.4
0.6
5.0
17.7
12.7
-42.7
-60.3
47.8
370.0
1.9
10.0
22.9
12.9
-25.1
-48.0
46.6
343.7
6.7
15.0
27.7
12.7
2.7
-25.0
39.3
323.3
21.3
20.0
31.7
11.7
17.7
-14.0
35.2
367.9
46.9
Id=350mA
Pin
(dBm)
Pout
(dBm)
Gain
(dB)
IM3
(dBm)
IM3/Pout
(dBc)
IP3
(dBm)
Id
(mA)
add
(%)
-10.0
2.2
12.2
-72.1
-74.3
39.4
346.7
0.1
-5.0
7.5
12.5
-67.7
-75.2
45.2
342.5
0.2
0.0
12.5
12.5
-57.6
-70.0
47.1
333.5
0.6
5.0
17.5
12.5
-42.7
-60.2
47.3
317.3
2.1
10.0
22.7
12.7
-23.9
-46.7
45.8
298.0
7.5
15.0
27.5
12.5
3.4
-24.2
38.5
289.5
23.1
20.0
31.6
11.6
20.9
-10.7
33.2
352.1
47.3




















Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-4-
Web Site:
www.sei.co.jp/GaAsIC/
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-5-
Technical Note
P0120009P
2W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Tc= 25C, Vds=8V, Ids=400mA, Pin=5d Bm
[Pout-Lstate]
f = 2.1GHz
pout
: 0.54
169.9
Source : 0.81
-155.1
Pout max : 17.65dBm
[IP3-Lstate]
f1 = 2.1GHz
f2 = 2.101GHz
IP3
: 0.55
-171.5
Source : 0.74
-156.6
IP3 max : 50.7d Bm
Tc= 25C, Vds=8V, Ids=350mA, Pin=5d Bm
[Pout-Lstate]
f = 2.1GHz
pout
: 0.54
169.9
Source : 0.81
-155.1
Pout max : 17.7d Bm
[IP3-Lstate]
f1 = 2.1GHz
f2 = 2.101GHz
IP3
: 0.49
-172.9
Source : 0.74
-156.6
IP3 max : 50.55d Bm
+j25
+j50
+j100
-j100
-j50
-j25
50
25
100
16.45
17.7
+j25
50
+j50
+j100
-j100
-j50
-j25
25
100
45.55
50.55
+j100
100
+j50
+j25
-j25
-j50
-j100
50
25
45.7
50.7
+j100
+j25
+j50
100
50
-j25
-j50
-j100
16.4
17.65
25