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Электронный компонент: P0531981H

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Features
1.9 GHz frequency band
Typical 36 dBm output power
Low power consumption 18 W typ.
Excellent adjacent leakage power
Typical 35 dB power gain
Cost-effective metal package
Low thermal resistance structure
Applications
Final stage power amplifier of base station for PHS
Description
The P0531981H is a high performance 1.9 GHz band power amplifier module capable of
36 dBm output power with a typical 35 dB gain at 1.9 GHz band, housed in a cost effective
metal package. This device features a low power consumption owing to the excellent linear-
ity and high gain of the pulse-doped GaAs MESFET developed by SEI, dissipating 1500 mA
typical. It operates from +12 V and -4.9 V power supplies.
P0531981H
1.9 GHz band
Power Amplifier Module
03.05.08
Preliminary
Power Amplifier Module
P0531981H
Absolute Maximum Ratings
Case Temperature Tc=25
C
Electrical Specifications
Case Temperature Tc=25
C
Notes: Operating of this device above any one of these parameters may cause permanent damage.
*Vg1,Vg2=-4.9V
Parameter
Symbol
Value
Units
DC Supply Voltage
14 *
V
- 7
V
Input Power
Operating Case Temperature
Topt
-25 to + 80
C
Storage Temperature
Tstg
-40 to + 95
C
Vd1, Vd2
Vg1, Vg2
Pin
10
dBm
Parameter
Symbol
Test Conditions
Frequency
Supply Current (under operation)
Power Gain
Harmonic Distortion
Gate Current
Input VSWR
Id
f
Ga
2f0
3f0
Ig
Value
Min.
Typ.
Max.
Units
1920
MHz
mA
34
dB
dBc
--
1880
-35
2.5
--
mA
dBc
-35
-45
15
1650
--
--
8
--
--
1500
1.5
35
--
Pout=36.0 dBm
Vd1=12 V
Vd2=12 V
Vg1=-4.9 V
Vg2=-4.9 V
--
-45
Adjacent Channel Leakage Power
Padj1
Padj2
--
--
-70
-67
dBc
dBc
600 kHz offset
900 kHz offset
-74
-72
in
Power Amplifier Module
P0531981H
Pin Assignment
(1) RFout
(2) Vd2
(3) Vg2
(4) Vd1
(5) Vg1
(6) RFin
Case: GND
Package Drawings (Dimensions are mm)
Electron Device Department
P0531981H
29.0
26.4
0.1
22.0
13.0
5.0
4-R1.2
2.4
9.0
2.0
2.0
1.8
// 0.1 A
A
SUMITOMO ELECTRIC
:Lot No.
Dimensions are mm
1.2
0.25
4.0
0.5
2.0 2.5
2.5
22.0
0.1
2.5 2.5
2.5
7.5
(1)
(2)
(3)
(4)
(5)
(6)
Power Amplifier Module
P0531981H
Power Characteristics
Harmonic Distortion
-80
-75
-70
-65
-60
-55
-50
-45
-40
33
34
35
36
37
38
2nd Harmonic Distortion
3rd Harmonic Distortion
Pout (dBm)
f=1900MHz
Vd=12V
Vg=-4.9V
2nd Harmonic Distortion (dBc)
3rd Harmonic Distortion (dBc)
33
34
35
36
37
38
1000
1200
1400
1600
1800
2000
-4
-3
-2
-1
0
1
2
f=1900MHz
Vd=12V
Vg=-4.9V
Pout
Gain
Total Id RF
Pin (dBm)
Total Id RF (mA)
Pout (dBm)
Gain (dB)
Power Amplifier Module
P0531981H
Adjacent Channel Leakage Power
-80
-75
-70
-65
-60
33
34
35
36
37
38
ACLR 600kHz Offset
ACLR 900kHz Offset
Pout (dBm)
f=1900MHz
Vd=12V
Vg=-4.9V
ACLR 600kHz Offset (dBc)
ACLR 900kHz Offset (dBc)