1
Oct-20-1997
BSM 15 GD 120 DN2
IGBT Power Module
Power module
3-phase full-bridge
Including fast free-wheel diodes
Package with insulated metal base plate
Type
V
CE
I
C
Package
Ordering Code
BSM 15 GD 120 DN2
1200V 25A
ECONOPACK 2
C67076-A2504-A67
BSM 15 GD120DN2E3224
1200V 25A
ECONOPACK 2K
C67070-A2504-A67
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE
1200
V
Collector-gate voltage
R
GE
= 20 k
V
CGR
1200
Gate-emitter voltage
V
GE
20
DC collector current
T
C
= 25 C
T
C
= 80 C
I
C
15
25
A
Pulsed collector current, t
p
= 1 ms
T
C
= 25 C
T
C
= 80 C
I
Cpuls
30
50
Power dissipation per IGBT
T
C
= 25 C
P
tot
145
W
Chip temperature
T
j
+ 150
C
Storage temperature
T
stg
-40 ... + 125
Thermal resistance, chip case
R
thJC
0.86
K/W
Diode thermal resistance, chip case
R
thJCD
1.5
Insulation test voltage, t = 1min.
V
is
2500
Vac
Creepage distance
-
16
mm
Clearance
-
11
DIN humidity category, DIN 40 040
-
F
sec
IEC climatic category, DIN IEC 68-1
-
40 / 125 / 56
2
Oct-20-1997
BSM 15 GD 120 DN2
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
V
GE
= V
CE,
I
C
= 0.6 mA
V
GE(th)
4.5
5.5
6.5
V
Collector-emitter saturation voltage
V
GE
= 15 V, I
C
= 15 A, T
j
= 25 C
V
GE
= 15 V, I
C
= 15 A, T
j
= 125 C
V
CE(sat)
-
-
3.1
2.5
3.7
3
Zero gate voltage collector current
V
CE
= 1200 V, V
GE
= 0 V, T
j
= 25 C
V
CE
= 1200 V, V
GE
= 0 V, T
j
= 125 C
I
CES
-
-
1.2
0.3
-
0.5
mA
Gate-emitter leakage current
V
GE
= 20 V, V
CE
= 0 V
I
GES
-
-
150
nA
AC Characteristics
Transconductance
V
CE
= 20 V, I
C
= 15 A
g
fs
5.5
-
-
S
Input capacitance
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
C
iss
-
1000
-
pF
Output capacitance
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
C
oss
-
150
-
Reverse transfer capacitance
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
C
rss
-
70
-
3
Oct-20-1997
BSM 15 GD 120 DN2
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at T
j
= 125 C
Turn-on delay time
V
CC
= 600 V, V
GE
= 15 V, I
C
= 15 A
R
Gon
= 82
t
d(on)
-
55
110
ns
Rise time
V
CC
= 600 V, V
GE
= 15 V, I
C
= 15 A
R
Gon
= 82
t
r
-
45
90
Turn-off delay time
V
CC
= 600 V, V
GE
= -15 V, I
C
= 15 A
R
Goff
= 82
t
d(off)
-
400
600
Fall time
V
CC
= 600 V, V
GE
= -15 V, I
C
= 15 A
R
Goff
= 82
t
f
-
70
100
Free-Wheel Diode
Diode forward voltage
I
F
= 15 A, V
GE
= 0 V, T
j
= 25 C
I
F
= 15 A, V
GE
= 0 V, T
j
= 125 C
V
F
-
-
1.9
2.4
-
2.9
V
Reverse recovery time
I
F
= 15 A, V
R
= -600 V, V
GE
= 0 V
di
F
/dt = -800 A/s, T
j
= 125 C
t
rr
-
0.1
-
s
Reverse recovery charge
I
F
= 15 A, V
R
= -600 V, V
GE
= 0 V
di
F
/dt = -800 A/s
T
j
= 25 C
T
j
= 125 C
Q
rr
-
-
3
1
-
-
C
4
Oct-20-1997
BSM 15 GD 120 DN2
Power dissipation
P
tot
=
(T
C
)
parameter: T
j
150 C
0
20
40
60
80
100 120
C
160
T
C
0
10
20
30
40
50
60
70
80
90
100
110
120
130
W
150
P
tot
Safe operating area
I
C
=
(V
CE
)
parameter: D = 0, T
C
= 25C , T
j
150 C
-1
10
0
10
1
10
2
10
A
I
C
10
0
10
1
10
2
10
3
V
V
CE
DC
10 ms
1 ms
100 s
tp = 11.0s
Collector current
I
C
=
(T
C
)
parameter: V
GE
15 V , T
j
150 C
0
20
40
60
80
100 120
C
160
T
C
0
2
4
6
8
10
12
14
16
18
20
22
A
26
I
C
Transient thermal impedance IGBT
Z
th JC
=
(t
p
)
parameter: D = t
p
/ T
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
5
Oct-20-1997
BSM 15 GD 120 DN2
Typ. output characteristics
I
C
= f (V
CE
)
parameter: t
p
= 80 s, T
j
= 25 C
0
1
2
3
V
5
V
CE
0
2
4
6
8
10
12
14
16
18
20
22
24
26
A
30
I
C
17V
15V
13V
11V
9V
7V
Typ. output characteristics
I
C
= f (V
CE
)
parameter: t
p
= 80 s, T
j
= 125 C
0
1
2
3
V
5
V
CE
0
2
4
6
8
10
12
14
16
18
20
22
24
26
A
30
I
C
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
I
C
= f (V
GE
)
parameter: t
p
= 80 s, V
CE
= 20 V
0
2
4
6
8
10
V
14
V
GE
0
2
4
6
8
10
12
14
16
18
20
22
24
26
A
30
I
C
6
Oct-20-1997
BSM 15 GD 120 DN2
Typ. gate charge
V
GE
=
(Q
Gate
)
parameter: I
C puls
= 15 A
0
10 20 30 40 50 60 70 80 nC 100
Q
Gate
0
2
4
6
8
10
12
14
16
V
20
V
GE
800 V
600 V
Typ. capacitances
C = f (V
CE
)
parameter: V
GE
= 0 V, f = 1 MHz
0
5
10
15
20
25
30
V
40
V
CE
-2
10
-1
10
0
10
1
10
nF
C
Ciss
Coss
Crss
Reverse biased safe operating area
I
Cpuls
= f(V
CE
)
,
T
j
= 150C
parameter: V
GE
= 15 V
0
200 400 600 800 1000 1200
V
1600
V
CE
0.0
0.5
1.0
1.5
2.5
I
Cpuls
/I
C
Short circuit safe operating area
I
Csc
= f(V
CE
) , T
j
= 150C
parameter: V
GE
= 15 V, t
SC
10 s, L < 50 nH
0
200 400 600 800 1000 1200
V
1600
V
CE
0
2
4
6
8
12
I
Csc
/I
C
7
Oct-20-1997
BSM 15 GD 120 DN2
Typ. switching time
I = f (I
C
) , inductive load , T
j
= 125C
par.: V
CE
= 600 V, V
GE
= 15 V, R
G
= 82
0
5
10
15
20
25
30
A
40
I
C
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
Typ. switching time
t = f (R
G
) , inductive load ,
T
j
= 125C
par.: V
CE
= 600 V, V
GE
= 15 V, I
C
= 15 A
0
50
100
150
200
300
R
G
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
Typ. switching losses
E = f (I
C
) ,
inductive load ,
T
j
= 125C
par.: V
CE
= 600 V, V
GE
= 15 V, R
G
= 82
0
5
10
15
20
25
30
A
40
I
C
0
1
2
3
4
5
6
7
8
mWs
10
E
Eon
Eoff
Typ. switching losses
E = f (R
G
) , inductive load , T
j
= 125C
par.: V
CE
= 600V, V
GE
= 15 V, I
C
= 15 A
0
50
100
150
200
300
R
G
0
1
2
3
4
5
6
7
8
mWs
10
E
Eon
Eoff
8
Oct-20-1997
BSM 15 GD 120 DN2
Forward characteristics of fast recovery
reverse diode
I
F
= f(V
F
)
parameter: T
j
0.0
0.5
1.0
1.5
2.0
V
3.0
V
F
0
2
4
6
8
10
12
14
16
18
20
22
24
26
A
30
I
F
T
j
=25C
=125C
j
T
Transient thermal impedance Diode
Z
th JC
=
(t
p
)
parameter: D = t
p
/ T
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
thJC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
9
Oct-20-1997
BSM 15 GD 120 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 180 g
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