Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GP120
Elektrische Eigenschaften / Electrical properties
Hchstzulssige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rckw. Spitzensperrspannung
repetitive peak reverse voltage
V
RRM
1600
V
Durchlastrom Grenzeffektivwert
RMS forward current per chip
I
FRMSM
40
A
Dauergleichstrom
DC forward current
T
C
= 80C
I
d
50
A
Stostrom Grenzwert
t
P
= 10 ms, T
vj
= 25C
I
FSM
500
A
surge forward current
t
P
= 10 ms, T
vj
= 150C
400
A
Grenzlastintegral
t
P
= 10 ms, T
vj
= 25C
I
2
t
1250
A
2
s
I
2
t - value
t
P
= 10 ms, T
vj
= 150C
800
A
2
s
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
1200
V
Kollektor-Dauergleichstrom
Tc = 80 C
I
C,nom.
50
A
DC-collector current
T
C
= 25 C
I
C
80
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
= 80 C
I
CRM
100
A
Gesamt-Verlustleistung
total power dissipation
T
C
= 25C
P
tot
360
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom
DC forward current
Tc = 80 C
I
F
50
A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1 ms
I
FRM
100
A
Grenzlastintegral
I
2
t - value
V
R
= 0V, t
p
= 10ms, T
vj
= 125C
I
2
t
1.200
A
2
s
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
1200
V
Kollektor-Dauergleichstrom
T
C
= 80 C
I
C,nom.
25
A
DC-collector current
T
C
= 25 C
I
C
45
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
= 80C
I
CRM
50
A
Gesamt-Verlustleistung
total power dissipation
T
C
= 25C
P
tot
230
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Diode Brems-Chopper/ Diode Brake-Chopper
Dauergleichstrom
DC forward current
Tc = 80 C
I
F
15
A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1 ms
I
FRM
30
A
prepared by: Andreas Schulz
date of publication:12.06.2003
approved by: Robert Severin
revision: 6
1(11)
DB-PIM-10.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GP120
Modul Isolation/ Module Isolation
Isolations-Prfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
V
ISOL
2,5
kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier
min.
typ.
max.
Durchlaspannung
forward voltage
T
vj
= 150C, I
F
= 50 A
V
F
-
1,05
-
V
Schleusenspannung
threshold voltage
T
vj
= 150C
V
(TO)
-
-
0,8
V
Ersatzwiderstand
slope resistance
T
vj
= 150C
r
T
-
-
6,5
m
W
Sperrstrom
reverse current
T
vj
= 150C, V
R
= 1600 V
I
R
-
3
-
mA
Modul Leitungswiderstand, Anschlsse-Chip
lead resistance, terminals-chip
T
C
= 25C
R
AA'+CC'
-
4
-
m
W
Transistor Wechselrichter/ Transistor Inverter
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
V
GE
= 15V, T
vj
= 25C, I
C
=
50 A
V
CE sat
-
2,2
2,55
V
collector-emitter saturation voltage
V
GE
= 15V, T
vj
= 125C, I
C
=
50 A
-
2,5
-
V
Gate-Schwellenspannung
gate threshold voltage
V
CE
= V
GE
, T
vj
= 25C, I
C
=
2 mA
V
GE(TO)
4,5
5,5
6,5
V
Eingangskapazitt
input capacitance
f = 1MHz, T
vj
= 25C
V
CE
= 25 V, V
GE
= 0 V
C
ies
-
3,3
-
nF
Kollektor-Emitter Reststrom
V
GE
= 0V, T
vj
= 25C, V
CE
=
1200 V
I
CES
-
3,0
500
A
collector-emitter cut-off current
V
GE
= 0V, T
vj
=125C, V
CE
=
1200 V
-
4,0
-
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
=20V, T
vj
=25C
I
GES
-
-
300
nA
Einschaltverzgerungszeit (ind. Last)
I
C
= I
Nenn
, V
CC
= 600 V
turn on delay time (inductive load)
V
GE
= 15V, T
vj
= 25C, R
G
=
15 Ohm
t
d,on
-
65
-
ns
V
GE
= 15V, T
vj
= 125C, R
G
=
15 Ohm
-
60
-
ns
Anstiegszeit (induktive Last)
I
C
= I
Nenn
, V
CC
= 600 V
rise time (inductive load)
V
GE
= 15V, T
vj
= 25C, R
G
=
15 Ohm
t
r
-
45
-
ns
V
GE
= 15V, T
vj
= 125C, R
G
=
15 Ohm
-
45
-
ns
Abschaltverzgerungszeit (ind. Last)
I
C
= I
Nenn
, V
CC
= 600 V
turn off delay time (inductive load)
V
GE
= 15V, T
vj
= 25C, R
G
=
15 Ohm
t
d,off
-
380
-
ns
V
GE
= 15V, T
vj
= 125C, R
G
=
15 Ohm
-
400
-
ns
Fallzeit (induktive Last)
I
C
= I
Nenn
, V
CC
= 600 V
fall time (inductive load)
V
GE
= 15V, T
vj
= 25C, R
G
=
15 Ohm
t
f
-
10
-
ns
V
GE
= 15V, T
vj
= 125C, R
G
=
15 Ohm
-
30
-
ns
Einschaltverlustenergie pro Puls
I
C
= I
Nenn
, V
CC
= 600 V
turn-on energy loss per pulse
V
GE
= 15V, T
vj
= 125C, R
G
=
15 Ohm
E
on
-
6,5
-
mWs
L
S
= 50 nH
Abschaltverlustenergie pro Puls
I
C
= I
Nenn
, V
CC
= 600 V
turn-off energy loss per pulse
V
GE
= 15V, T
vj
= 125C, R
G
=
15 Ohm
E
off
-
6
-
mWs
L
S
= 50 nH
Kurzschluverhalten
t
P
10s, V
GE
15V, R
G
=
15 Ohm
SC Data
T
vj
125C, V
CC
=
720 V
I
SC
-
300
-
A
dI/dt = 4000 A/s
2(11)
DB-PIM-10.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GP120
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
min.
typ.
max.
Modulinduktivitt
stray inductance module
L
sCE
-
-
100
nH
Modul Leitungswiderstand, Anschlsse-Chip
lead resistance, terminals-chip
T
C
= 25C
R
CC'+EE'
-
7
-
m
W
Diode Wechselrichter/ Diode Inverter
min.
typ.
max.
Durchlaspannung
V
GE
= 0V, T
vj
= 25C, I
F
= 50 A
V
F
-
1,75
2,2
V
forward voltage
V
GE
= 0V, T
vj
= 125C, I
F
= 50 A
-
1,7
-
V
Rckstromspitze
I
F
=I
Nenn
, - di
F
/dt = 1600A/s
peak reverse recovery current
V
GE
= -10V, T
vj
= 25C, V
R
=
600 V
I
RM
-
75
-
A
V
GE
= -10V, T
vj
= 125C, V
R
=
600 V
-
85
-
A
Sperrverzgerungsladung
I
F
=I
Nenn
, - di
F
/dt = 1600A/s
recovered charge
V
GE
= -10V, T
vj
= 25C, V
R
=
600 V
Q
r
-
5,5
-
As
V
GE
= -10V, T
vj
= 125C, V
R
=
600 V
-
12
-
As
Abschaltenergie pro Puls
I
F
=I
Nenn
, - di
F
/dt = 1600A/s
reverse recovery energy
V
GE
= -10V, T
vj
= 25C, V
R
=
600 V
E
RQ
-
1,6
-
mWs
V
GE
= -10V, T
vj
= 125C, V
R
=
600 V
-
4
-
mWs
Transistor Brems-Chopper/ Transistor Brake-Chopper
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
V
GE
= 15V, T
vj
= 25C, I
C
=
25,0 A
V
CE sat
-
2,2
2,55
V
collector-emitter saturation voltage
V
GE
= 15V, T
vj
= 125C, I
C
=
25,0 A
-
2,5
-
V
Gate-Schwellenspannung
gate threshold voltage
V
CE
= V
GE
, T
vj
= 25C, I
C
=
1mA
V
GE(TO)
4,5
5,5
6,5
V
Eingangskapazitt
input capacitance
f = 1MHz, T
vj
= 25C
V
CE
= 25 V, V
GE
= 0 V
C
ies
-
1,5
-
nF
Kollektor-Emitter Reststrom
V
GE
= 0V, T
vj
= 25C, V
CE
=
1200 V
I
CES
-
1,5
500
A
collector-emitter cut-off current
V
GE
= 0V, T
vj
= 125C, V
CE
=
1200 V
-
2,0
-
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25C
I
GES
-
-
300
nA
Diode Brems-Chopper/ Diode Brake-Chopper
min.
typ.
max.
Durchlaspannung
T
vj
= 25C, I
F
=
25,0 A
V
F
-
2,1
2,4
V
forward voltage
T
vj
= 125C, I
F
=
25,0 A
-
2
-
V
NTC-Widerstand/ NTC-Thermistor
min.
typ.
max.
Nennwiderstand
rated resistance
T
C
= 25C
R
25
-
5
-
k
W
Abweichung von R
100
deviation of R
100
T
C
= 100C, R
100
= 493
W
DR/R
-5
5
%
Verlustleistung
power dissipation
T
C
= 25C
P
25
20
mW
B-Wert
B-value
R
2
= R
1
exp [B(1/T
2
- 1/T
1
)]
B
25/50
3375
K
3(11)
DB-PIM-10.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GP120
Thermische Eigenschaften / Thermal properties
min.
typ.
max.
Innerer Wrmewiderstand
Gleichr. Diode/ Rectif. Diode
R
thJC
-
-
0,65
K/W
thermal resistance, junction to case
Trans. Wechsr./ Trans. Inverter
-
-
0,35
K/W
Diode Wechsr./ Diode Inverter
-
-
0,55
K/W
Trans. Bremse/ Trans. Brake
-
-
0,55
K/W
Diode Bremse/ Diode Brake
-
-
1,2
K/W
bergangs-Wrmewiderstand
Gleichr. Diode/ Rectif. Diode
l
Paste
=1W/m*K
R
thCK
-
0,04
-
K/W
thermal resistance, case to heatsink
Trans. Wechsr./ Trans. Inverter
l
grease
=1W/m*K
-
0,02
-
K/W
Diode Wechsr./ Diode Inverter
-
0,04
-
K/W
Hchstzulssige Sperrschichttemperatur
maximum junction temperature
T
vj
-
-
150
C
Betriebstemperatur
operation temperature
T
op
-40
-
125
C
Lagertemperatur
storage temperature
T
stg
-40
-
125
C
Mechanische Eigenschaften / Mechanical properties
Innere Isolation
internal insulation
Al
2
O
3
CTI
comperative tracking index
225
Anzugsdrehmoment f. mech. Befestigung
M
3
Nm
mounting torque
10%
Gewicht
weight
G
300
g
4(11)
DB-PIM-10.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GP120
I
C
[A]
V
CE
[V]
I
C
[A]
V
CE
[V]
Ausgangskennlinienfeld Wechselr. (typisch) I
C
= f (V
CE
)
Output characteristic Inverter (typical)
V
GE
= 15 V
0
10
20
30
40
50
60
70
80
90
100
0
0,5
1
1,5
2
2,5
3
3,5
4
4,5
5
Tj = 25C
Tj = 125C
0
10
20
30
40
50
60
70
80
90
100
0
0,5
1
1,5
2
2,5
3
3,5
4
4,5
5
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
Ausgangskennlinienfeld Wechselr. (typisch) I
C
= f (V
CE
)
Output characteristic Inverter (typical)
T
vj
= 125C
5(11)
DB-PIM-10.xls
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