BSM 75 GD 170 DL
vorlufige Daten
Hchstzulssige Werte / Maximum rated values
preliminary data
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
1700 V
Kollektor-Dauergleichstrom
DC-collector current
T
C
= 80C
I
C,nom.
75 A
T
C
= 25C
I
C
150 A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
p
= 1 ms, T
C
= 80C
I
CRM
150 A
Gesamt-Verlustleistung
total power dissipation
T
C
= 25C, Transistor
P
tot
625 W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
20 V
Dauergleichstrom
DC forward current
I
F
75 A
Periodischer Spitzenstrom
repetitive peak forw. current
t
p
= 1 ms
I
FRM
150 A
Grenzlastintegral der Diode
I
2
t - value, Diode
V
R
= 0V, t
p
= 10ms, T
Vj
= 125C
I
2
t
1800 A
2
s
Isolations-Prfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
V
ISOL
3,4 kV
Charakteristische Werte / Characteristic values: Transistor
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
I
C
= 75A, V
GE
= 15V, T
vj
= 25C
v
CE sat
-
2,7
3,3 V
I
C
= 75A, V
GE
= 15V, T
vj
= 125C
-
3,2
- V
Gate-Schwellenspannung
gate threshold voltage
I
C
= 3,5mA, V
CE
= V
GE
, T
vj
= 25C
v
GE(th)
4,5
5,5
6,5 V
Eingangskapazitt
input capacitance
f = 1MHz,T
vj
= 25C,V
CE
= 25V, V
GE
= 0V
C
ies
-
5
- nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V
CE
= 1700V, V
GE
= 0V, T
vj
= 25C
I
CES
-
0,03
0,15 mA
V
CE
= 1700V, V
GE
= 0V, T
vj
= 125C
-
2
- mA
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25C
I
GES
-
-
100 nA
Einschaltverzgerungszeit (induktive Last)
turn-on delay time (inductive load)
I
C
= 75A, V
CE
= 900V
t
d,on
V
GE
= 15V, R
G
= 20
, T
vj
= 25C
-
0,1
- s
V
GE
= 15V, R
G
= 20
, T
vj
= 125C
-
0,1
- s
Anstiegszeit (induktive Last)
rise time (inductive load)
I
C
= 75A, V
CE
= 900V
t
r
V
GE
= 15V, R
G
= 20
, T
vj
= 25C
-
0,1
- s
V
GE
= 15V, R
G
= 20
, T
vj
= 125C
-
0,1
- s
Abschaltverzgerungszeit (ind. Last)
turn off delay time (inductive load)
I
C
= 75A, V
CE
= 900V
t
d,off
V
GE
= 15V, R
G
= 20
, T
vj
= 25C
-
0,8
- s
V
GE
= 15V, R
G
= 20
, T
vj
= 125C
-
0,9
- s
Fallzeit (induktive Last)
fall time (inductive load)
I
C
= 75A, V
CE
= 900V
t
f
V
GE
= 15V, R
G
= 20
, T
vj
= 25C
-
0,03
- s
V
GE
= 15V, R
G
= 20
, T
vj
= 125C
-
0,03
- s
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I
C
= 75A, V
CE
= 900V, V
GE
= 15V
E
on
R
G
= 20
, T
vj
= 125C, L
S
= 60nH
-
37
- mWs
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I
C
= 75A, V
CE
= 900V, V
GE
= 15V
E
off
R
G
= 20
, T
vj
= 125C, L
S
= 60nH
-
22
- mWs
Kurzschluverhalten
SC Data
t
P
10sec, V
GE
15V, R
G
= 20
I
SC
T
Vj
125C, V
CC
=1000V
-
300
- A
V
CEmax
=V
CES
-L
sCE
x dI/dt
Modulinduktivitt
stray inductance module
L
sCE
-
25
- nH
Charakteristische Werte / Characteristic values: Diode
Durchlaspannung
forward voltage
I
F
= 75A, V
GE
= 0V, T
vj
= 25C
V
F
-
2,2
2,6 V
I
F
= 75A, V
GE
= 0V, T
vj
= 125C
-
2
- V
Rckstromspitze
peak reverse recovery current
I
F
= 75A, - di
F
/dt = 1100A/sec
I
RM
V
R
= 900V, V
GE
= -10V, T
vj
= 25C
-
55
- A
V
R
= 900V, V
GE
= -10V, T
vj
= 125C
-
85
- A
Sperrverzgerungsladung
recovered charge
I
F
= 75A, - di
F
/dt = 1100A/sec
Q
r
V
R
= 900V, V
GE
= -10V, T
vj
= 25C
-
9
- As
V
R
= 900V, V
GE
= -10V, T
vj
= 125C
-
19
- As
Abschaltenergie pro Puls
reverse recovery energy
I
F
= 75A, - di
F
/dt = 1100A/sec
E
rec
V
R
= 900V, V
GE
= -10V, T
vj
= 25C
-
3,5
- mWs
V
R
= 900V, V
GE
= -10V, T
vj
= 125C
-
6,5
- mWs
Thermische Eigenschaften / Thermal properties
Innerer Wrmewiderstand
thermal resistance, junction to case Transistor / transistor, DC
R
thJC
-
-
0,2 K/W
Diode / diode, DC
-
-
0,47 K/W
bergangs-Wrmewiderstand
thermal resistance, case to heatsink pro Module / per Module
R
thCK
d
Paste
50m / d
grease
50m
-
- 0,011 K/W
Hchstzul. Sperrschichttemperatur
max. junction temperature
T
vj
-
-
150 C
Betriebstemperatur
operating temperature
T
op
-40
-
125 C
Lagertemperatur
storage temperature
T
stg
-40
-
125 C
Mechanische Eigenschaften / Mechanical properties
Innere Isolation
internal insulation
Al
2
O
3
Kriechstrecke
creepage distance
16 mm
Luftstrecke
clearance
11 mm
CTI
comperative tracking index
225
Anzugsdrehmoment f. mech. Befestigung
mounting torque
max.
5 Nm
Gewicht
weight
G
300 g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehrigen Technischen Erluterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.
BSM 75 GD 170 DL
BSM 75 GD 170 DL / 1
Bild / Fig. 1
Ausgangskennlinie (typisch) /
Output characteristic (typical)
I
C
= f(V
CE
)
V
GE
= 15V
0
25
50
75
100
125
150
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
Tj = 25C
Tj = 125C
I
C
[A]
V
CE
[V]
BSM 75 GD 170 DL / 3
Bild / Fig. 3
bertragungscharakteristic (typisch) /
Transfer characteristic (typical)
I
C
= f(V
GE
)
V
CE
= 20V
0
25
50
75
100
125
150
5
6
7
8
9
10
11
12
13
Tj = 25C
Tj = 125C
I
C
[A]
V
GE
[V]
BSM 75 GD 170 DL / 4
Bild / Fig. 4
Durchlakennlinie der Inversdiode (typisch) /
Forward characteristic of inverse diode (typical)
I
F
= f(V
F
)
0
25
50
75
100
125
150
0,0
0,5
1,0
1,5
2,0
2,5
3,0
Tj = 25C
Tj = 125C
I
F
[A]
V
F
[V]
Bild / Fig. 5
Schaltverluste (typisch) /
Switching losses (typical)
E
on
= f(I
C
), E
off
= f(I
C
), E
rec
= f(I
C
)
R
gon
= R
goff
=
20
, V
CE
= 900V, T
j
= 125C
BSM 75 GD 170 DL / 5
0
20
40
60
80
100
120
140
0
25
50
75
100
125
150
Eoff
Eon
Erec
E
[mJ]
I
C
[A]
BSM 75 GD 170 DL / 6
Bild / Fig. 6
Schaltverluste (typisch) /
Switching losses (typical)
E
on
= f(R
G
), E
off
= f(R
G
), E
rec
= f(R
G
)
I
C
= 75A, V
CE
= 900V, T
j
= 125C
0
10
20
30
40
50
60
70
80
90
0
10
20
30
40
50
60
70
80
90
100 110
Eoff
Eon
Erec
E
[mJ]
R
G
[
]
BSM 75 GD 170 DL / 2
Bild / Fig. 2
Ausgangskennlinienfeld (typisch) /
Output characteristic (typical)
I
C
= f(V
CE
)
T
vj
= 125C
0
25
50
75
100
125
150
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
VGE = 19V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
I
C
[A]
V
CE
[V]
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