Schnelle Gleichrichterdiode
Fast Diode
D 291 S
Elektrische Eigenschaften / Electrical properties
Hchstzulssige Werte / Maximum rated values
Periodische Spitzensperrspannung
3500V, 4000 V
repetitive peak reverse voltage
t
vj
= -40C...140C
V
RRM
4500 V
Stospitzensperrspannung
3600V, 4100
non-repetitive peak reverse voltage
t
vj
= +25C...140C
V
RSM
4600 V
Durchlastrom-Grenzeffektivwert / RMS forward current
I
FRMSM
700 A
Dauergrenzstrom / mean forward current
t
C
= 85C
I
FAVM
290 A
t
C
= 51C
445 A
Stostrom-Grenzwert
1)
t
vj
= 25C
I
FSM
5200 A
surge forward current
1)
t
vj
= 125C
4500 A
Grenzlastintegral
t
vj
= 25C
It
135000
It-value
t
vj
= 125C
100000 As
Kritische periodische Ausschaltstromsteilheit
t
vj
= 125C, I
FM
= 3000 A, V
RM
= 1600 V
(-di/dt)
com
critical repetitive rate of fall of on - state
C = 0,125 F, R = 6
700 A/s
Charakteristische Werte / Characteristic values
Durchlaspannung / forward voltage
t
vj
= 125C i
FM
= 1200 A
V
F
4,15 V
Schleusenspannung / threshold voltage
t
vj
= 125c
V
(TO)
1,9 V
Ersatzwiderstand / forward slope resistance
t
vj
= 125C
r
T
1,76 m
Sperrstrom / reverse current
t
vj
= 125C, v
R
= 0,67 V
RRM
i
R
ca. 30 mA
t
vj
= 125C, v
R
= V
RRM
50 mA
Rckstromspitze / peak reverse recovery current
i
FM
= 1000 A, -di
F
/dt = 250 A/s
I
RM
500 A
t
vj
= 125C; v
R(Spr)
= 1000 V;
C = 0,125 F; R = 6
Sperrverzgerungsladung
i
FM
= 1000 A, -di
F
/dt = 250 A/s
Q
rr
950 As
recovered charge
t
vj
= 125C; v
R(Spr)
= 1000 V;
C = 0,125 F; R = 6
Thermische Eigenschaften / Thermal properties
Innerer Wrmewiderstand
Khlflche / cooling surface
R
thJC
thermal resistance, junction to case
beidseitig / two-sided
0,04 K/W
einseitig / single-sided
0,08 K/W
bergangs-Wrmewiderstand
Khlflche / cooling surface
R
thCK
thermal resistance, case to heatsink
beidseitig / two-sided
0,006 K/W
einseitig / single-sided
0,012 K/W
Hchstzulssige Sperrschichttemp. / max. junction temperat.
t
vj
max
125 C
Betriebstemperatur / operating temperature
t
c
op
-40...+125 C
Lagertemperatur / storage temperature
t
stg
-40...+150 C
Mechanische Eigenschaften / Mechanical properties
Gehuse, siehe Anlage / case, see appendix
Seite / page 1
Anprekraft /clamping force
F
9...13 kN
Gewicht / weight
G
ca. 250 g
Luftstrecke / air distance
20 mm
Kriechstrecke / creepage distance
30 mm
Feuchteklasse / humidity classification
DIN 40040
C
Schwingfestigkeit / vibration resistance
f = 50 Hz
50 m/s
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt
in Verbindung mit den zugehrigen Technischen Erluterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the
belonging technical notes.
Fig. 1
On-state characteristics i
F
= f(V
F
)
t
vj
= 125C
Upper limit of scatter range
Lower limit of scatter range
Fig. 4
Peak forward recovery voltage (typical values)
t
vj
= 125C
t
vj
= 25C
1
2
3
4
5
6
D 291 S_01
2000
1500
1000
500
0
i
F
[A]
v
F
[V]
D 291 S
0,030
0,025
0,020
0,015
0,010
0,005
0
10
20
30
40
50
60
70
80
90
100
D 291 S_03
f = 200 Hz
f = 500 Hz
f = 100 Hz
f = 50 Hz
f = 60 Hz
rth
[K/W]
ED [%]
[el]
Fig. 3
rth
= f(ED, frequency)
Both-sided and one-sided cooling
Current wave form:: squarewave
Parameter: frequency
0,100
0,075
0,050
0,025
0
0,001
0,01
0,1
1
10
100
Z
(th)JC
Z
(th)p
[K/W]
t [s]
D 291 S_02
2
1
2 3 4 6 8
2 3 4 6 8
2 3 4 6 8
2 3 4 6 8
2 3 4
8
6
I
FAY
60
I
FAY
120
I
FAY
180
I
FAY
180
Fig. 2
Transient thermal impedance DC and impuls current
(f = 50 Hz)
Parameter: Current wave form
1. single-sided cooling
2. both-sided cooling
DC
300
200
100
0
500
1000
1500
2000
2500
V
FRM
D 291 S_08
-di/dt [A/s]
V
FRM
[V]
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