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Электронный компонент: D921S

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European Power-
Semiconductor and
Electronics Company
VWK January
Marketing Information
D 921 S 45 T
A
K
3,5
Anode
Kathode
62,8
Schnelle Gleichrichterdiode
Fast Diode
D 921 S 45 T
Elektrische Eigenschaften / Electrical properties
Hchstzulssige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
t
vj
= -40C...140C
V
RRM
4500 V
Stospitzensperrspannung
non-repetitive peak reverse voltage
t
vj
= +25C...140C
V
RSM
4600 V
Durchlastrom-Grenzeffektivwert / RMS forward current
I
FRMSM
2560 A
Dauergrenzstrom / mean forward current
t
C
= 85C
I
FAVM
1380 A
t
C
= 52C
1630 A
Stostrom-Grenzwert
1)
t
vj
= 25C, t
p
= 10 ms, v
R
= 0V
I
FSM
A
surge forward current
1)
t
vj
= 140C, t
p
= 10 ms, v
R
= 0V
23000 A
Grenzlastintegral
t
vj
= 25C, t
p
= 10 ms, v
R
= 0V
It
As
It-value
t
vj
= 140C, t
p
= 10 ms, v
R
= 0V
2650000 As
Kritische periodische Ausschaltstromsteilheit
I
FM
= 3000 A, V
R
= 0,67 V
DRM
(-di
F
/dt)
com
500 A/s
critical repetitive rate of fall of on - state
C
S
= 0,3 F, R
S
=
/C
S
Charakteristische Werte / Characteristic values
Gleichsperrspannung / cont. direct reverse voltage
t
c
= -25C ... +85C
V
R(D)
typ. 2600 V
Durchlaspannung / forward voltage
t
vj
= 140C, i
F
= 2500 A
V
F
max 2,6 V
Schleusenspannung / threshold voltage
t
vj
= 140C
V
(TO)
1,4 V
Ersatzwiderstand / forward slope resistance
t
vj
= 140C
r
T
0,48 m
Sperrstrom / reverse current
t
vj
= 140C, v
R
= 0,67 V
RRM
i
R
mA
t
vj
= 140C, v
R
= V
RRM
max. 100 mA
Rckstromspitze / peak reverse recovery current
i
FM
= 1000 A, -di
F
/dt = 250 A/s
I
RM
max. 800 A
v
R
= 1000 V; D
S
= D291S45T
C = 0,3 F; R =
/C
S
Sperrverzgerungsladung
i
FM
= 1000 A, -di
F
/dt = 250 A/s
Q
rr
2800 As
recovered charge
v
R
= 1000 V; D
S
= D291S45T
C = 0,3 F; R =
/C
S
Sanftheit
i
FM
= 1000 A, -di
F
/dt = 250 A/s
SR
typ. 0,002 As
Softness
v
R
= 1000 V; D
S
= D291S45T
C = 0,3 F; R =
/C
S
Thermische Eigenschaften / Thermal properties
Innerer Wrmewiderstand
Khlflche / cooling surface
R
thJC
thermal resistance, junction to case
beidseitig / two-sided
0,0125 K/W
Anoden / anode
0,0228 K/W
Kathode / cathode
0,0277 K/W
bergangs-Wrmewiderstand
Khlflche / cooling surface
R
thCK
thermal resistance, case to heatsink
beidseitig / two-sided
max. 0,003 K/W
einseitig / single-sided
max. 0,006 K/W
Hchstzul. Sperrschichttemp. / max. junction temperat.
t
vj
max
140 C
Betriebstemperatur / operating temperature
t
c
op
-40...+140 C
Lagertemperatur / storage temperature
t
stg
-40...+150 C
Mechanische Eigenschaften / Mechanical properties
Gehuse, siehe Anlage / case, see appendix
Seite / page 1
Anprekraft /clamping force
F
27...45 kN
Gewicht / weight
G
typ. 850 g
Luftstrecke / air distance
20 mm
Kriechstrecke / creepage distance
30 mm
Feuchteklasse / humidity classification
DIN 40040
C
Schwingfestigkeit / vibration resistance
f = 50 Hz
50 m/s
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt
in Verbindung mit den zugehrigen Technischen Erluterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the
belonging technical notes.
1) Richtwert fr obere Streubereichsgrenze / Upper limit of scatter range (standart value)
Fig. 2
Surge current I
TSM
= f(
tp
)
Sine halfwave i
2
dt = f(t
p
)
t
vj
= t
vj
max
3000
2500
2000
1500
1000
500
0
D 921 S 45 T_01
0,5
1,0
1,5
2,0
2,5
3,0
3,5
i
F
[A]
v
F
[V]
max
min
Fig. 1
On-state characteristics
t
vj
= t
vj
max
D 921 S 45 T
0,001
0,01
0,1
1
10
100
0,030
0,020
0,010
0
D 921 S 45 T_02
2 3 4 6 8
2 3 4 6 8
2 3 4 6 8
2 3 4 6 8
2 3 4 6 8
t [s]
Z
thJC
[K/W]
Analytical elements of transient thermal impedance Z
thJC
for DC
Analytical function:
Z
thJC
=
R
thn
(1-EXP(-t/
n
))
n
max
n = 1
Fig. 3
Transient thermal impedance Z
thJC
= f(t), DC
1 - Two-sided cooling
2 - Anode-sided cooling
3 - Cathode-sided cooling
1. Z
thJC
2. Z
thJC
3. Z
thJC
r [K/W]
[s]
r [K/W]
[s]
r [K/W]
[s]
1 0,00430 1,70000 0,01460 8,00000 0,01950 7,30000
2 0,00610 0,16200 0,00610 0,16200 0,00610 0,16200
3 0,00060 0,04060 0,00060 0,04060 0,00060 0,04060
4 0,00100 0,00940 0,00100 0,00940 0,00100 0,00940
5 0,00050 0,00190 0,00050 0,00190 0,00050 0,00190
0,01250
-
0,02280
-
0,02770
-
3
2
1
100
10
1
0,1
1
10
100
D 921 S 45 T_03
I
FSM
[A]
t [ms]
2
3 4 5 6 8
2
3 4 5 6 8
2
3 4 5 6 8
8
6
5
4
3
2
8
6
5
4
3
2
i
2
dt
i
2
dt
[A
2
s]
I
TSM
[A]
10
6
10
7
100
10
1
10
100
1000
D 921 S 45 T_04
Q
r
[As]
-di/dt [A/s]
8
6
5
4
3
2
8
6
5
4
3
2
8
6
5
4
3
2
8
6
5
4
3
2
I
FM
=
1000 A
500 A
300 A
100 A
3000 A
Fig. 4
Reverse recovery charge (upper limit, ca. 98% values)
Parameter: I
FM
Conditions:
t
vj
= 140C; C
S
=
3 F
VR
1000 V; DS = D 291 S 45 T
10
10
10
10
3
2
1
10
100
1000
4
D 921 S 45 T_05
3000 A
8
6
5
4
3
2
8
6
5
4
3
2
2
3
4
5
6
8
2
3
4
5
6
8
2
3
4
5
6
8
I
FM
=
1000 A
300 A
100 A
500 A
Q
r
[As]
-di/dt [A/s]
Fig. 5
Reverse recovery current (upper-limit, ca. 98% values)
Parameter
: I
FM
Conditions:
t
vj
= 140C; C
S
= 3 F
V
R
1000 V; D
S
= D 291 S 45 T
10
1
0,1
10
100
1000
E
off
[Ws]
-di/dt [A/s]
8
6
5
4
3
2
8
6
5
4
3
2
8
6
5
4
3
2
8
6
5
4
3
2
3000A
1000A
600A
300A
100A
I
FM
=
Fig. 6
Turn-off-losses E
off
= f(di/dt)
diodes with V
F
max
Parameter:I
FM
t
vj
= 140C; C
S
= 4 F
D
S
= D 291 S 45 T
V
RM
= 3000 V
V
RM
= 2000 V
80
70
60
50
40
30
20
10
0
100
200
300
400
500
600
700
800
25C
D 921 S 45 T_07
Tvjmax
V
FRM
[V]
di
F
/dt [A/s]
Fig. 7
Peak Forward Recovery Voltage
(typical values)
Parameter: t
vj
D 921 S 45 T