IGBT-Module
FF 400 R 16 KF4
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
1600 V
Kollektor-Dauergleichstrom
DC-collector current
I
C
400 A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
p
=1 ms
I
CRM
800 A
Gesamt-Verlustleistung
total power dissipation
t
C
=25C, Transistor /transistor
P
tot
3100 W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GE
20 V
Dauergleichstrom
DC forward current
I
F
400 A
Periodischer Spitzenstrom
repetitive peak forw. current
t
p
=1ms
I
FRM
800 A
Isolations-Prfspannung
insulation test voltage
RMS, f=50 Hz, t= 1 min.
V
ISOL
3,4 kV
Charakteristische Werte / Characteristic values: Transistor
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung collector-emitter saturation voltage
i
C
=400A, v
GE
=15V, t
vj
=25C
v
CE sat
-
3,3
3,7 V
i
C
=400A, v
GE
=15V, t
vj
=125C
-
4,4
4,8 V
Gate-Schwellenspannung
gate threshold voltage
i
C
=30mA, v
CE
=v
GE
, t
vj
=25C
v
GE(TO)
4,5
5,5
6,5 V
Eingangskapazitt
input capacity
f
O
=1MHz,t
vj
=25C,v
CE
=25V, v
GE
=0V
C
ies
-
65
- nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
v
CE
=1600V, v
GE
=0V, t
vj
=25C
i
CES
-
3
- mA
v
CE
=1600V, v
GE
=0V, t
vj
=125C
-
30
- mA
Gate-Emitter Reststrom
gate leakage current
v
CE
=0V, v
GE
=20V, t
vj
=25C
i
GES
-
-
400 nA
Emitter-Gate Reststrom
gate leakage current
v
CE
=0V, v
EG
=20V, t
vj
=25C
i
EGS
-
-
400 nA
Einschaltzeit (induktive Last)
turn-on time (inductive load)
i
C
=400A,v
CE
=900V,v
L
=15V
t
on
v
L
=15V, R
G
=4,7
, t
vj
=25C
-
0,8
- s
v
L
=15V, R
G
=4,7
, t
vj
=125C
-
1
- s
Speicherzeit (induktive Last)
storage time (inductive load)
i
C
=400A,v
CE
=900V,v
L
=15V
t
s
v
L
=15V, R
G
=4,7
, t
vj
=25C
-
1,1
- s
v
L
=15V, R
G
=4,7
, t
vj
=125C
-
1,3
- s
Fallzeit (induktive Last)
fall time (inductive load)
i
C
=400A,v
CE
=900V,v
L
=15V
t
f
v
L
=15V, R
G
=4,7
, t
vj
=25C
-
0,25
- s
v
L
=15V, R
G
=4,7
, t
vj
=125C
-
0,3
- s
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
i
C
=400A,v
CE
=900V,v
L
=15V
E
on
R
G
=4,7
, t
vj
=125C, L
S
=70nH
-
170
- mWs
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
i
C
=400A,v
CE
=900V,v
L
=15V
E
off
R
G
=4,7
, t
vj
=125C, L
S
=70nH
-
90
- mWs
Inversdiode / Inverse diode
Durchlaspannung
forward voltage
i
F
=400A, v
GE
=0V, t
vj
=25C
v
F
-
2,4
2,8 V
i
F
=400A, v
GE
=0V, t
vj
=125C
-
2,2
- V
Rckstromspitze
peak reverse recovery current
i
F
=400A, -di
F
/dt=2,5kA/s
I
RM
v
RM
=900V, v
EG
=10V, t
vj
=25C
-
270
- A
v
RM
=900V, v
EG
=10V, t
vj
=125C
-
330
- A
Sperrverzgerungsladung
recovered charge
i
F
=400A, -di
F
/dt=2,5kA/s
Q
r
v
RM
=900V, v
EG
=10V, t
vj
=25C
-
50
- As
v
RM
=900V, v
EG
=10V, t
vj
=125C
-
110
- As
Thermische Eigenschaften / Thermal properties
Innerer Wrmewiderstand
thermal resistance, junction to case
Transistor, DC, pro Modul / per module
R
thJC
0,02 C/W
Transistor, DC, pro Zweig / per arm
0,04 C/W
Diode /diode, DC, pro Modul / per module
0,05 C/W
Diode /diode, DC, pro Zweig / per arm
0,1 C/W
bergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Module / per Module
R
thCK
0,01 C/W
pro Zweig / per arm
0,02 C/W
Hchstzul. Sperrschichttemperatur
max. junction temperature
t
vj max
150 C
Betriebstemperatur
operating temperature
t
c op
-40...+125 C
Lagertemperatur
storage temperature
t
stg
-40...+125 C
Mechanische Eigenschaften / Mechanical properties
Innere Isolation
internal insulation
Al
2
O
3
Anzugsdrehmoment f. mech. Befestigung / mounting torque
terminals M6 / tolerance 10%
M1
3 Nm
Anzugsdrehmoment f. elektr. Anschlsse / terminal connection torque
terminals M4 / tolerance +5/-10%
M2
2 Nm
terminals M8
8...10 Nm
Gewicht
weight
G
ca. 1500 g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den
zugehrigen Technischen Erluterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid
in
combination with the belonging technical notes.
Bedingung fr den Kurzschluschutz / Conditions for short-circuit protection
t
fg
= 10 s
V
CC
= 1000 V
v
L
= 15V
v
CEM
= 1300 V
R
GF
= R
GR
= 4,7
i
CMK1
4000 A
t
vj
= 125C
i
CMK2
3000 A
Unabhngig davon gilt bei abweichenden Bedingungen / with regard to other conditions
v
CEM
= V
CES
- 20nH x |di
c
/dt|
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