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Электронный компонент: FF500R25KF1

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FF 500 R 25 KF1
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
2500
V
Kollektor-Dauergleichstrom
T
C
= 80 C
I
C,nom.
500
A
DC-collector current
T
C
= 25 C
I
C
800
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
= 80C
I
CRM
1000
A
Gesamt-Verlustleistung
total power dissipation
T
C
=25C, Transistor
P
tot
5,2
kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Dauergleichstrom
DC forward current
I
F
500
A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1 ms
I
FRM
1000
A
Grenzlastintegral der Diode
I
2
t - value, Diode
V
R
= 0V, t
p
= 10ms, T
Vj
= 125C
I
2
t
100
kA
2
s
Isolations-Prfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
V
ISOL
5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
I
C
= 500A, V
GE
= 15V, T
vj
= 25C
V
CE sat
-
3,0
3,5
V
collector-emitter saturation voltage
I
C
= 500A, V
GE
= 15V, T
vj
= 125C
-
3,8
4,3
V
Gate-Schwellenspannung
gate threshold voltage
I
C
= 40mA, V
CE
= V
GE
, T
vj
= 25C
V
GE(th)
4,3
5,3
6,3
V
Gateladung
gate charge
V
GE
= -15V ... +15V
Q
G
-
9
-
C
Eingangskapazitt
input capacitance
f = 1MHz,T
vj
= 25C,V
CE
= 25V, V
GE
= 0V
C
ies
-
48
-
nF
Rckwirkungskapazitt
reverse transfer capacitance
f = 1MHz,T
vj
= 25C,V
CE
= 25V, V
GE
= 0V
C
res
-
4
-
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V
CE
= 2500V, V
GE
= 0V, T
vj
= 25C
I
CES
-
-
10
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25C
I
GES
-
-
400
nA
prepared by: Oliver Schilling
date of publication: 01.09.2001
approved by: Thomas Schtze
revision: 3
1
FF5_1@3.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FF 500 R 25 KF1
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Einschaltverzgerungszeit (ind. Last)
I
C
= 500A, V
CE
= 1200V
turn on delay time (inductive load)
V
GE
= 15V, R
G
= 2,7
, C
GE
=68nF, T
vj
= 25C,
t
d,on
-
1,4
-
s
V
GE
= 15V, R
G
= 2,7
, C
GE
=68nF, T
vj
= 125C,
-
1,5
-
s
Anstiegszeit (induktive Last)
I
C
= 500A, V
CE
= 1200V
rise time (inductive load)
V
GE
= 15V, R
G
= 2,7
, C
GE
=68nF, T
vj
= 25C,
t
r
-
0,25
-
s
V
GE
= 15V, R
G
= 2,7
, C
GE
=68nF, T
vj
= 125C,
-
0,25
-
s
Abschaltverzgerungszeit (ind. Last)
I
C
= 500A, V
CE
= 1200V
turn off delay time (inductive load)
V
GE
= 15V, R
G
= 5,6
, C
GE
=68nF, T
vj
= 25C,
t
d,off
-
2,2
-
s
V
GE
= 15V, R
G
= 5,6
, C
GE
=68nF, T
vj
= 125C,
-
2,2
-
s
Fallzeit (induktive Last)
I
C
= 500A, V
CE
= 1200V
fall time (inductive load)
V
GE
= 15V, R
G
= 5,6
, C
GE
=68nF, T
vj
= 25C,
t
f
-
0,2
-
s
V
GE
= 15V, R
G
= 5,6
, C
GE
=68nF, T
vj
= 125C,
-
0,2
-
s
Einschaltverlustenergie pro Puls
I
C
= 500A, V
CE
= 1200V, V
GE
= 15V
turn-on energy loss per pulse
R
G
= 2,7
, C
GE
=68nF, T
vj
= 125C , L
S
= 60nH
E
on
-
700
-
mWs
Abschaltverlustenergie pro Puls
I
C
= 500A, V
CE
= 1200V, V
GE
= 15V
turn-off energy loss per pulse
R
G
= 5,6
, C
GE
=68nF, T
vj
= 125C , L
S
= 60nH
E
off
-
500
-
mWs
Kurzschluverhalten
t
P
10sec, V
GE
15V
SC Data
T
Vj
125C, V
CC
=1200V, V
CEmax
=V
CES
-L
sCE
dI/dt
I
SC
-
200
-
A
Modulinduktivitt
stray inductance module
L
sCE
-
25
-
nH
Modulleitungswiderstand, Anschlsse - Chip
module lead resistance, terminals - chip
R
CC+EE
-
0,37
-
m
Diode / Diode
min.
typ.
max.
Durchlaspannung
I
F
= 500A, V
GE
= 0V, T
vj
= 25C
V
F
-
2,3
2,7
V
forward voltage
I
F
= 500A, V
GE
= 0V, T
vj
= 125C
-
2,3
2,7
V
Rckstromspitze
I
F
= 500A, - di
F
/dt = 2000A/s
peak reverse recovery current
V
R
= 1200V, VGE = -10V, T
vj
= 25C
I
RM
-
480
-
A
V
R
= 1200V, VGE = -10V, T
vj
= 125C
-
500
-
A
Sperrverzgerungsladung
I
F
= 500A, - di
F
/dt = 2000A/s
recovered charge
V
R
= 1200V, VGE = -10V, T
vj
= 25C
Q
r
-
260
-
As
V
R
= 1200V, VGE = -10V, T
vj
= 125C
-
450
-
As
Abschaltenergie pro Puls
I
F
= 500A, - di
F
/dt = 2000A/s
reverse recovery energy
V
R
= 1200V, VGE = -10V, T
vj
= 25C
E
rec
-
160
-
mWs
V
R
= 1200V, VGE = -10V, T
vj
= 125C
-
300
-
mWs
2
FF5_1@3.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FF 500 R 25 KF1
Thermische Eigenschaften / Thermal properties
min.
typ.
max.
Innerer Wrmewiderstand
Transistor / transistor, DC
R
thJC
-
-
0,024
K/W
thermal resistance, junction to case
Diode/Diode, DC
-
-
0,048
K/W
bergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Modul / per Module
Paste
1 W/m*K /
grease
1 W/m*K
R
thCK
-
0,016
-
K/W
Hchstzulssige Sperrschichttemperatur
maximum junction temperature
T
vj
-
-
150
C
Betriebstemperatur Sperrschicht
junction operation temperature
Schaltvorgnge IGBT(RBSOA);Diode(SOA)
switching operation IGBT(RBSOA);Diode(SOA)
T
vj,op
-40
-
125
C
Lagertemperatur
storage temperature
T
stg
-40
-
125
C
Mechanische Eigenschaften / Mechanical properties
Gehuse, siehe Anlage
case, see appendix
Material Modulbodenplatte
material of module baseplate
AlSiC
Innere Isolation
internal insulation
AlN
Kriechstrecke
creepage distance
32
mm
Luftstrecke
clearance
19,1
mm
CTI
comperative tracking index
>400
Anzugsdrehmoment f. mech. Befestigung
M1
5
Nm
mounting torque
Anzugsdrehmoment f. elektr. Anschlsse
terminals M4
M2
2
Nm
terminal connection torque
terminals M8
8 - 10
Nm
Gewicht
weight
G
1000
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehrigen Technischen Erluterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
3
FF5_1@3.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FF 500 R 25 KF1
I
C
[A]
V
CE
[V]
I
C
[A]
V
CE
[V]
0
100
200
300
400
500
600
700
800
900
1000
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
5,5
6,0
Tj = 25C
Tj = 125C
Ausgangskennlinie (typisch) I
C
= f (V
CE
)
Output characteristic (typical)
V
GE
= 15V
0
100
200
300
400
500
600
700
800
900
1000
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
5,5
6,0
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
VGE = 8V
Ausgangskennlinienfeld (typisch) I
C
= f (V
CE
)
Output characteristic (typical)
T
vj
= 125C
4
FF5_1@3.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FF 500 R 25 KF1
I
C
[A]
V
GE
[V]
I
F
[A]
V
F
[V]
0
100
200
300
400
500
600
700
800
900
1000
5
6
7
8
9
10
11
12
13
Tj = 25C
Tj = 125C
bertragungscharakteristik (typisch) I
C
= f (V
GE
)
Transfer characteristic (typical)
V
CE
= 10V
0
100
200
300
400
500
600
700
800
900
1000
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
Tj = 25C
Tj = 125C
Durchlakennlinie der Inversdiode (typisch) I
F
= f (V
F
)
Forward characteristic of inverse diode (typical)
5
FF5_1@3.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FF 500 R 25 KF1
E [
m
J]
I
C
[A]
E [
m
J]
R
G
[
]
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
0
100
200
300
400
500
600
700
800
900
1000
Eon
Eoff
Erec
Schaltverluste (typisch) E
on
= f (I
C
) , E
off
= f (I
C
) , E
rec
= f (I
C
)
Switching losses (typical)
R
gon
=2,7
, R
goff
=5,6
, C
GE
=68nF , V
GE
=15V, V
CE
= 1200V, T
j
= 125C, L
S
= 60nH
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
Eon
Eoff
Erec
Schaltverluste (typisch) E
on
= f (R
G
) , E
off
= f (R
G
) , E
rec
= f (R
G
)
Switching losses (typical)
I
C
= 500A , V
CE
= 1200V , V
GE
=15V, C
GE
= 68nF, T
j
= 125C, L
S
= 60nH
6
FF5_1@3.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FF 500 R 25 KF1
I
C
[A]
V
CE
[V]
IR
[A
]
VR [V]
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
R
g
= 5,6 Ohm, C
GE
= 68nF, T
vj
= 125C
0
200
400
600
800
1000
0
500
1000
1500
2000
2500
IC,Modul
IC,Chip
0
200
400
600
800
1000
0
500
1000
1500
2000
2500
Sicherer Arbeitsbereich Diode (SOA)
safe operation area Diode (SOA)
T
vj
= 125C
7
FF5_1@3.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FF 500 R 25 KF1
t [sec]
i
1
2
3
4
r
i
[K/kW]
: IGBT
2,7
6,6
11,1
3,6
i
[sec]
: IGBT
0,011
0,052
0,103
0,95
r
i
[K/kW]
: Diode
6,3
15
13,5
13,2
i
[sec]
: Diode
0,025
0,056
0,1
1,31
Z
th
J
C
[K
/ W]
0,001
0,01
0,1
0,001
0,01
0,1
1
10
100
Zth:Diode
Zth:IGBT
Transienter Wrmewiderstand Z
thJC
= f (t)
Transient thermal impedance
8
FF5_1@3.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FF 500 R 25 KF1
uere Abmessungen und Schaltbild /
extenal dimensions and circuit diagram
7
IH6
28
10
external connections
(to be done)
55,2
11,85
29,5
E1
C1
G1
C1
E1
E2
C2
E2
G2
C2
114
130
1
3
for M8
C1
E1
C2
E2
for M4
C1
G2
E2
3,5 deep
3,5 deep
6
for M6
43
29,5
5
47
45
29,5
25,5
E1
G1
C2
4
7
2
9
FF5_1@3.xls