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Электронный компонент: FF600R12KE3

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I
C, nom
600
A
I
C
850
A
min.
typ.
max.
-
1,7
2,15
V
-
2
t.b.d.
V
-
nA
-
5
gate emitter leakage current
Gate Emitter Reststrom
V
CE
= 0V, V
GE
= 20V, T
vj
= 25C
I
GES
V
GE(th)
C
ies
gate threshold voltage
V
R
= 0V, t
p
= 10ms, T
vj
= 125C
Isolations Prfspannung
Grenzlastintegral
Transistor Wechselrichter / transistor inverter
Gateladung
V
GE
= -15V...+15V; V
CE=
...V
Q
G
-
1200
A
V
nF
43
-
5,8
-
C
t
p
= 1ms, T
c
= 80C
Periodischer Kollektor Spitzenstrom
P
tot
1200
T
c
= 25C; Transistor
repetitive peak collector current
I
CRM
DC forward current
+/- 20
2,8
V
GES
gate emitter peak voltage
Dauergleichstrom
I
F
600
Hchstzulssige Werte / maximum rated values
Kollektor Emitter Sperrspannung
T
c
= 80C
Kollektor Dauergleichstrom
collector emitter voltage
Elektrische Eigenschaften / electrical properties
T
vj
= 25C
T
c
= 25C
DC collector current
Periodischer Spitzenstrom
Gesamt Verlustleistung
total power dissipation
Gate Emitter Spitzenspannung
V
CEsat
Charakteristische Werte / characteristic values
approved: SM TM; Christoph Lbke
Technische Information / technical information
FF600R12KE3
IGBT-Module
IGBT-Modules
1200
V
vorlufige Daten
preliminary data
repetitive peak forward current
kV
75
k As
t
p
= 1ms
I
FRM
insulation test voltage
RMS, f= 50Hz, t= 1min.
It value
It
V
CES
A
5
5,8
2,5
V
ISOL
A
kW
V
6,5
date of publication: 2002-07-30
Kollektor Emitter Sttigungsspannung
I
C
= 600A, V
GE
= 15V, T
vj
= 25C,
collector emitter satration voltage
I
C
= 600A, V
GE
= 15V, T
vj
= 125C,
Gate Schwellenspannung
I
C
= 24mA, V
CE
= V
GE
, T
vj
= 25C,
Eingangskapazitt
input capacitance
f= 1MHz, T
vj
= 25C, V
CE
= 25V, V
GE
= 0V
revision: 2.0
prepared by: MOD-D2; Mark Mnzer
C
res
collector emitter cut off current
I
CES
Rckwirkungskapazitt
reverse transfer capacitance
V
GE
= 0V, T
vj
= 25C, V
CE
= 1200V
-
gate charge
mA
-
nF
-
2
f= 1MHz, T
vj
= 25C, V
CE
= 25V, V
GE
= 0V
-
Kollektor Emitter Reststrom
-
400
1 (8)
DB_FF600R12KE3_2.0.xls
2002-07-30
Technische Information / technical information
FF600R12KE3
IGBT-Module
IGBT-Modules
vorlufige Daten
preliminary data
min.
typ.
max.
-
0,60
-
s
-
0,66
-
s
-
0,23
-
s
-
0,22
-
s
-
0,82
-
s
-
0,96
-
s
-
0,15
-
s
-
0,18
-
s
-
2,0
2,5
V
-
1,8
-
V
-
170
-
A
-
265
-
A
-
25
-
C
-
60
-
C
-
6
-
mJ
-
17
-
mJ
A
I
SC
-
2400
-
Einschaltverlustenergie pro Puls
turn on energy loss per pulse
Ausschaltverlustenergie pro Puls
Fallzeit (induktive Last)
fall time (inductive load)
-
nH
stray inductance module
Modulindiktivitt
L
sCE
-
20
turn off energy loss per pulse
SC data
V
CC
= 900V, V
CEmax
= V
CES
- L
sCE
di/dt
Kurzschlussverhalten
t
P
10s, V
GE
15V, T
Vj
125C
0,18
Q
r
Ausschaltenergie pro Puls
reverse recovery energy
E
rec
V
R
= 600V, V
GE
= -15V, T
vj
= 25C
V
R
= 600V, V
GE
= -15V, T
vj
= 125C
I
F
=I
C,nom
, -di
F
/dt= 2400A/s
Sperrverzgerungsladung
recoverred charge
I
F
=I
C,nom
, -di
F
/dt= 2400A/s
E
off
I
C
= 600A, V
CC
= 600V, L
s
= 120nH
V
GE
=15V, R
Goff
=1,2
W, T
vj
= 125C
-
E
on
I
C
= 600A, V
CC
= 600V, L
s
= 120nH
V
GE
=15V, R
Gon
=3,6
W, T
vj
= 125C
I
C
= 600A, V
CC
= 600V
t
d,off
V
GE
=15V, R
Goff
=1,2
W, T
vj
=25C
V
GE
=15V, R
Goff
=1,2
W, T
vj
= 125C
I
C
= 600A, V
CC
= 600V
V
GE
=15V, R
Goff
=1,2
W, T
vj
=25C
V
GE
=15V, R
Goff
=1,2
W, T
vj
= 125C
m
W
Charakteristische Werte / characteristic values
-
-
t
f
V
GE
=15V, R
Gon
=3,6
W, T
vj
=25C
V
GE
=15V, R
Gon
=3,6
W, T
vj
= 125C
-
t
d,on
I
C
= 600A, V
CC
= 600V
t
r
Abschaltverzgerungszeit (ind. Last)
turn off delay time (inductive load)
V
R
= 600V, V
GE
= -15V, T
vj
= 125C
V
F
forward voltage
Rckstromspitze
peak reverse recovery current
I
RM
Leitungswiderstand, Anschluss-Chip
lead resistance, terminal-chip
R
CC/EE
T
c
= 25C
V
R
= 600V, V
GE
= -15V, T
vj
= 25C
I
F
=I
C,nom
, -di
F
/dt= 2400A/s
Durchlassspannung
Charakteristische Werte / characteristic values
I
F
= I
C, nom
, V
GE
= 0V, T
vj
= 25C
I
F
= I
C, nom
, V
GE
= 0V, T
vj
= 125C
Diode Wechselrichter / diode inverter
Transistor Wechselrichter / transistor inverter
Anstiegszeit (induktive Last)
rise time (inductive load)
Einschaltverzgerungszeit (ind. Last)
turn on delay time (inductive load)
V
GE
=15V, R
Gon
=3,6
W, T
vj
= 125C
I
C
= 600A, V
CC
= 600V
V
GE
=15V, R
Gon
=3,6
W, T
vj
=25C
V
R
= 600V, V
GE
= -15V, T
vj
= 25C
V
R
= 600V, V
GE
= -15V, T
vj
= 125C
-
mJ
-
mJ
120
95
2 (8)
DB_FF600R12KE3_2.0.xls
2002-07-30
Technische Information / technical information
FF600R12KE3
IGBT-Module
IGBT-Modules
vorlufige Daten
preliminary data
min.
typ.
max.
R
thJC
-
-
0,022
K/W
-
-
0,044
K/W
-
-
0,040
K/W
-
-
0,080
K/W
-
0,006
-
K/W
-
0,012
-
K/W
clearance
Luftstrecke
>400
mm
CTI
mm
creepage distance
T
vj op
pro Modul / per module
pro Zweig/ per arm;
l
Paste
/
l
grease
=1W/m*K
Kriechstrecke
operation temperature
Lagertemperatur
storage temperature
1,7
-
R
thCK
Al
2
O
3
17
10
-40
-
terminal connection torque
M
M
Anzugsdrehmoment, elektr. Anschlsse
Anschlsse / terminal M4
Anschlsse / terminal M8
Anzugsdrehmoment, mech. Befestigung
M
mounting torque
case, see appendix
Gehuse, siehe Anlage
internal insulation
Schraube / screw M5
This technical information specifies semiconductor devices but promises no characteristics. It is valid
with the belonging technical notes.
Mechanische Eigenschaften / mechanical properties
Nm
4,25
-
5,75
Gewicht
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehrigen technischen Erluterungen.
125
C
C
T
stg
-40
-
125
C
150
-
-
maximum junction temperature
Betriebstemperatur
Thermische Eigenschaften / thermal properties
thermal resistance, case to heatsink
Hchstzulssige Sperrschichttemp.
bergangs Wrmewiderstand
T
vj max
comperative tracking index
Innere Isolation
weight
G
g
2,3
Nm
10
Nm
1500
8
-
Innerer Wrmewiderstand
thermal resistance, junction to case
Transistor, DC, pro Modul / per module
Transistor, DC, pro Zweig / per arm
Diode/Diode, DC, pro Modul / per module
Diode/Diode, DC, pro Zweig / per arm
3 (8)
DB_FF600R12KE3_2.0.xls
2002-07-30
Technische Information / technical information
FF600R12KE3
IGBT-Module
IGBT-Modules
vorlufige Daten
preliminary data
Ausgangskennlinie (typisch)
I
C
= f(V
CE
)
output characteristic (typical)
T
vj
= 125C
output characteristic (typical)
V
GE
= 15V
Ausgangskennlinienfeld (typisch)
I
C
= f(V
CE
)
0
200
400
600
800
1000
1200
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE
[V]
I
C
[A
]
Tvj = 25C
Tvj = 125C
0
200
400
600
800
1000
1200
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
V
CE
[V]
I
C
[A
]
Vge=19V
Vge=17V
Vge=15V
Vge=13V
Vge=11V
Vge=9V
4 (8)
DB_FF600R12KE3_2.0.xls
2002-07-30
Technische Information / technical information
FF600R12KE3
IGBT-Module
IGBT-Modules
vorlufige Daten
preliminary data
bertragungscharakteristik (typisch)
transfer characteristic (typical)
I
C
= f(V
GE
)
V
CE
= 20V
Durchlasskennlinie der Inversdiode (typisch)
I
F
= f(V
F
)
forward caracteristic of inverse diode (typical)
0
200
400
600
800
1000
1200
5
6
7
8
9
10
11
12
13
V
GE
[V]
I
C
[A
]
Tvj=25C
Tvj=125C
0
200
400
600
800
1000
1200
0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
1,6
1,8
2,0
2,2
2,4
2,6
V
F
[V]
I
F
[A
]
Tvj = 25C
Tvj = 125C
5 (8)
DB_FF600R12KE3_2.0.xls
2002-07-30
Technische Information / technical information
FF600R12KE3
IGBT-Module
IGBT-Modules
vorlufige Daten
preliminary data
Switching losses (typical)
E
on
= f (I
C
) , E
off
= f (I
C
) , E
rec
= f (I
C
)
V
GE
=15V, R
gon
=3,6
W, R
goff
=1,2
W, V
CE
=600V, T
vj
=125C
Schaltverluste (typisch)
Switching losses (typical)
E
on
= f (R
G
) , E
off
= f (R
G
) , E
rec
= f (R
G
)
V
GE
=15V, I
C
=600A, V
CE
=600V, T
vj
=125C
Schaltverluste (typisch)
0
50
100
150
200
250
300
350
400
0
150
300
450
600
750
900
1050
1200
I
C
[A]
E [m
J
]
Eon
Eoff
Erec
0
50
100
150
200
250
300
350
400
0
3
6
9
12
15
18
21
24
27
30
33
36
R
G
[
W]
E [m
J
]
Eon
Eoff
Erec
6 (8)
DB_FF600R12KE3_2.0.xls
2002-07-30
Technische Information / technical information
FF600R12KE3
IGBT-Module
IGBT-Modules
vorlufige Daten
preliminary data
6,897E-01
Z
thJC
= f (t)
3
2,51
0,83
3,820E-03
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
V
GE
=15V, T
vj
=125C
i
r
i
[K/kW] : IGBT
t
i
[s] : IGBT
r
i
[K/kW] : Diode
t
i
[s] : Diode
1
18,49
5,38
2,850E-03
22,96
4,452E-01
25,20
7,451E-02
26,46
2,647E-02
2
22,17
5,634E-02
4
2,997E-02
Transienter Wrmewiderstand
Transient thermal impedance
0,001
0,01
0,1
0,001
0,01
0,1
1
10
t [s]
Z
th
J
C
[
K
/W]
Zth : IGBT
Zth : Diode
IC,Chip
0
200
400
600
800
1000
1200
1400
0
200
400
600
800
1000
1200
1400
V
CE
[V]
I
C
[A
]
IC,Chip
7 (8)
DB_FF600R12KE3_2.0.xls
2002-07-30
Technische Information / technical information
FF600R12KE3
IGBT-Module
IGBT-Modules
vorlufige Daten
preliminary data
Gehusemae / Schaltbild
Package outline / Circuit diagram
8 (8)
DB_FF600R12KE3_2.0.xls
2002-07-30
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Attention
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staff. This Data Sheet is describing the specification of the products for which a
warranty is granted exclusively pursuant the terms and conditions of the supply
agreement. There will be no guarantee of any kind for the product and its
specifications. Changes to the Data Sheet are reserved.
You and your technical departments will have to evaluate the suitability of the
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with respect to such application. Should you require product information in
excess of the data given in the Data Sheet, please contact your local Sales Office
via "www.eupec.com / sales & contact".
Warning
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For information on the types in question please contact your local Sales Office via
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