Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP10R12KE3
Vorlufig
Preliminary
Elektrische Eigenschaften / Electrical properties
Hchstzulssige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rckw. Spitzensperrspannung
repetitive peak reverse voltage
T
vj
=25C
V
RRM
1600
V
Durchlastrom Grenzeffektivwert pro Chip
RMS forward current per chip
T
C
=80C
I
FRMSM
25
A
Gleichrichter Ausgang Grenzeffektivstrom
maximum RMS current at Rectifier output
T
C
=80C
I
RMSmax
36
A
Stostrom Grenzwert
t
P
= 10 ms, T
vj
= 25C
I
FSM
196
A
surge forward current
t
P
= 10 ms, T
vj
= 150C
158
A
Grenzlastintegral
t
P
= 10 ms, T
vj
= 25C
I
2
t
192
A
2
s
I
2
t - value
t
P
= 10 ms, T
vj
= 150C
125
A
2
s
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
T
vj
=25C
V
CES
1200
V
Kollektor-Dauergleichstrom
T
C
= 80C
I
C,nom.
10
A
DC-collector current
T
C
= 25 C
I
C
15
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
=80C
I
CRM
20
A
Gesamt-Verlustleistung
total power dissipation
T
C
= 25C
P
tot
55
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom
DC forward current
I
F
10
A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1 ms
I
FRM
20
A
Grenzlastintegral
I
2
t - value
V
R
= 0V, t
p
= 10ms, T
vj
= 125C
I
2
t
20
A
2
s
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
T
vj
=25C
V
CES
1200
V
Kollektor-Dauergleichstrom
T
C
= 80 C
I
C,nom.
10
A
DC-collector current
T
C
= 25 C
I
C
15
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
= 80C
I
CRM
20
A
Gesamt-Verlustleistung
total power dissipation
T
C
= 25C
P
tot
55
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Diode Brems-Chopper/ Diode Brake-Chopper
Dauergleichstrom
DC forward current
I
F
10
A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1 ms
I
FRM
20
A
prepared by: Thomas Passe
date of publication: 2002-02-14
approved by: Ingo Graf
revision: 6
1(12)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP10R12KE3
Vorlufig
Preliminary
Modul Isolation/ Module Isolation
Isolations-Prfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
V
ISOL
2,5
kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier
min.
typ. max.
Durchlaspannung
forward voltage
T
vj
= 150C, I
F
= 10 A
V
F
-
0,95
-
V
Schleusenspannung
threshold voltage
T
vj
= 150C
V
(TO)
-
0,78
V
Ersatzwiderstand
slope resistance
T
vj
= 150C
r
T
-
17
m
W
Sperrstrom
reverse current
T
vj
= 150C, V
R
= 1600 V
I
R
-
5
-
mA
Modul Leitungswiderstand, Anschlsse-Chip
lead resistance, terminals-chip
T
C
= 25C
R
AA'+CC'
-
11
-
m
W
Transistor Wechselrichter/ Transistor Inverter
min.
typ. max.
Kollektor-Emitter Sttigungsspannung
V
GE
= 15V, T
vj
= 25C, I
C
=
10 A
V
CE sat
-
1,9
2,45
V
collector-emitter saturation voltage
V
GE
= 15V, T
vj
= 125C, I
C
=
10 A
-
2,3
-
V
Gate-Schwellenspannung
gate threshold voltage
V
CE
= V
GE
, T
vj
= 25C, I
C
=
0,3mA
V
GE(TO)
4,5
5,5
6,5
V
Eingangskapazitt
input capacitance
f = 1MHz, T
vj
= 25C
V
CE
= 25 V, V
GE
= 0 V
C
ies
-
0,6
-
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
=20V, T
vj
=25C
I
GES
-
-
400
nA
Einschaltverzgerungszeit (ind. Last)
I
C
= I
Nenn
, V
CC
= 600 V
turn on delay time (inductive load)
V
GE
= 15V, T
vj
= 25C, R
G
=
100 Ohm
t
d,on
-
52
-
ns
V
GE
= 15V, T
vj
= 125C, R
G
=
100 Ohm
-
50
-
ns
Anstiegszeit (induktive Last)
I
C
= I
Nenn
, V
CC
= 600 V
rise time (inductive load)
V
GE
= 15V, T
vj
= 25C, R
G
=
100 Ohm
t
r
-
20
-
ns
V
GE
= 15V, T
vj
= 125C, R
G
=
100 Ohm
-
30
-
ns
Abschaltverzgerungszeit (ind. Last)
I
C
= I
Nenn
, V
CC
= 600 V
turn off delay time (inductive load)
V
GE
= 15V, T
vj
= 25C, R
G
=
100 Ohm
t
d,off
-
292
-
ns
V
GE
= 15V, T
vj
= 125C, R
G
=
100 Ohm
-
391
-
ns
Fallzeit (induktive Last)
I
C
= I
Nenn
, V
CC
=
600 V
fall time (inductive load)
V
GE
= 15V, T
vj
= 25C, R
G
=
100 Ohm
t
f
-
65
-
ns
V
GE
= 15V, T
vj
= 125C, R
G
=
100 Ohm
-
90
-
ns
Einschaltverlustenergie pro Puls
I
C
= I
Nenn
, V
CC
=
600 V
turn-on energy loss per pulse
V
GE
= 15V, T
vj
= 125C, R
G
=
100 Ohm
E
on
-
1,42
-
mWs
L
S
= 80 nH
Abschaltverlustenergie pro Puls
I
C
= I
Nenn
, V
CC
= 600 V
turn-off energy loss per pulse
V
GE
= 15V, T
vj
= 125C, R
G
=
100 Ohm
E
off
-
1,22
-
mWs
L
S
= 80 nH
Kurzschluverhalten
t
P
10s, V
GE
15V, R
G
=
100 Ohm
SC Data
T
vj
125C, V
CC
=
720 V
I
SC
-
40
-
A
-
mA
I
CES
-
5,0
V
GE
= 0V, T
vj
=125C, V
CE
= 1200V
2(12)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP10R12KE3
Vorlufig
Preliminary
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
min.
typ. max.
Modulinduktivitt
stray inductance module
L
sCE
-
-
40
nH
Modul Leitungswiderstand, Anschlsse-Chip
lead resistance, terminals-chip
T
C
= 25C
R
CC'+EE'
-
14
-
m
W
Diode Wechselrichter/ Diode Inverter
min.
typ. max.
Durchlaspannung
V
GE
= 0V, T
vj
= 25C, I
F
=
10 A
V
F
-
1,7
2,1
V
forward voltage
V
GE
= 0V, T
vj
= 125C, I
F
=
10 A
-
1,7
-
V
Rckstromspitze
I
F
=I
Nenn
, - di
F
/dt = 550 A/us
peak reverse recovery current
V
GE
= -10V, T
vj
= 25C, V
R
=
600 V
I
RM
-
14
-
A
V
GE
= -10V, T
vj
= 125C, V
R
=
600 V
-
15
-
A
Sperrverzgerungsladung
I
F
=I
Nenn
, - di
F
/dt = 550 A/us
recovered charge
V
GE
= -10V, T
vj
= 25C, V
R
=
600 V
Q
r
-
1
-
As
V
GE
= -10V, T
vj
= 125C, V
R
=
600 V
-
1,8
-
As
Abschaltenergie pro Puls
I
F
=I
Nenn
, - di
F
/dt = 550 A/us
reverse recovery energy
V
GE
= -10V, T
vj
= 25C, V
R
=
600 V
E
rec
-
0,26
-
mWs
V
GE
= -10V, T
vj
= 125C, V
R
=
600 V
-
0,56
-
mWs
Transistor Brems-Chopper/ Transistor Brake-Chopper
min.
typ. max.
Kollektor-Emitter Sttigungsspannung
V
GE
= 15V, T
vj
= 25C, I
C
=
10,0 A
V
CE sat
-
1,9
2,45
V
collector-emitter saturation voltage
V
GE
= 15V, T
vj
= 125C, I
C
=
10,0 A
-
2,3
-
V
Gate-Schwellenspannung
gate threshold voltage
V
CE
= V
GE
, T
vj
= 25C, I
C
=
0,3mA
V
GE(TO)
4,5
5,5
6,5
V
Eingangskapazitt
input capacitance
f = 1MHz, T
vj
= 25C
V
CE
= 25 V, V
GE
= 0 V
C
ies
-
0,6
-
nF
Kollektor-Emitter Reststrom
-
5,0
-
mA
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25C
I
GES
-
-
400
nA
Diode Brems-Chopper/ Diode Brake-Chopper
min.
typ. max.
Durchlaspannung
T
vj
= 25C, I
F
=
10,0 A
V
F
-
1,8
2,3
V
forward voltage
T
vj
= 125C, I
F
=
10,0 A
-
1,85
-
V
NTC-Widerstand/ NTC-Thermistor
min.
typ. max.
Nennwiderstand
rated resistance
T
C
= 25C
R
25
-
5
-
k
W
Abweichung von R
100
deviation of R
100
T
C
= 100C, R
100
= 493
W
DR/R
-5
5
%
Verlustleistung
power dissipation
T
C
= 25C
P
25
20
mW
B-Wert
B-value
R
2
= R
1
exp [B(1/T
2
- 1/T
1
)]
B
25/50
3375
K
V
GE
= 0V, T
vj
= 125C, V
CE
= 1200V
3(12)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP10R12KE3
Vorlufig
Preliminary
Thermische Eigenschaften / Thermal properties
min.
typ. max.
Innerer Wrmewiderstand
Gleichr. Diode/ Rectif. Diode
l
Paste
=1W/m*K
R
thJH
-
1,9
-
K/W
thermal resistance, junction to heatsink
Trans. Wechsr./ Trans. Inverter
l
grease
=1W/m*K
-
2,6
-
K/W
Diode Wechsr./ Diode Inverter
-
3,7
-
K/W
Trans. Bremse/ Trans. Brake
-
2,6
-
K/W
Diode Bremse/ Diode Brake
-
4,0
-
K/W
Innerer Wrmewiderstand
Gleichr. Diode/ Rectif. Diode
R
thJC
-
-
1,9
K/W
thermal resistance, junction to case
Trans. Wechsr./ Trans. Inverter
-
-
2,2
K/W
Diode Wechsr./ Diode Inverter
-
-
2,7
K/W
Trans. Bremse/ Trans. Brake
-
-
2,2
K/W
Diode Bremse/ Diode Brake
-
-
2,9
K/W
bergangs-Wrmewiderstand
Gleichr. Diode/ Rectif. Diode
l
Paste
=1W/m*K
R
thCH
-
0,2
-
K/W
thermal resistance, case to heatsink
Trans. Wechsr./ Trans. Inverter
l
grease
=1W/m*K
-
0,6
-
K/W
Diode Wechsr./ Diode Inverter
-
1,3
-
K/W
Trans. Bremse/ Trans. Brake
-
0,6
-
K/W
Diode Bremse/ Diode Brake
-
1,4
-
K/W
Hchstzulssige Sperrschichttemperatur
maximum junction temperature
T
vj
-
-
150
C
Betriebstemperatur
operation temperature
T
op
-40
-
125
C
Lagertemperatur
storage temperature
T
stg
-40
-
125
C
Mechanische Eigenschaften / Mechanical properties
Innere Isolation
internal insulation
Al
2
O
3
CTI
comperative tracking index
225
Anprekraft f. mech. Befestigung pro Feder
F
N
mounting force per clamp
Gewicht
weight
G
36
g
Kriechstrecke
creeping distance
13,5
mm
Luftstrecke
clearance
12
mm
Kriechstrecke
creeping distance
7,5
mm
Luftstrecke
clearance
7,5
mm
Terminal - Terminal
terminal to terminal
40...80
Kontakt - Khlkrper
terminal to heatsink
4(12)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP10R12KE3
Vorlufig
Preliminary
I
C
[A
]
V
CE
[V]
I
C
[A
]
V
CE
[V]
Ausgangskennlinienfeld Wechselr. (typisch) I
C
= f (V
CE
)
Output characteristic Inverter (typical)
V
GE
= 15 V
0
2
4
6
8
10
12
14
16
18
20
0,00
0,50
1,00
1,50
2,00
2,50
3,00
3,50
Tj = 25C
Tj = 125C
0
2
4
6
8
10
12
14
16
18
20
0,00
0,50
1,00
1,50
2,00
2,50
3,00
3,50
9V
11V
13V
15V
17V
19V
Ausgangskennlinienfeld Wechselr. (typisch) I
C
= f (V
CE
)
Output characteristic Inverter (typical)
T
vj
= 125C
5(12)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP10R12KE3
Vorlufig
Preliminary
I
C
[A
]
V
GE
[V]
I
F
[A
]
V
F
[V]
Durchlakennlinie der Freilaufdiode Wechselr. (typisch) I
F
= f (V
F
)
Forward characteristic of FWD Inverter (typical)
0
2
4
6
8
10
12
14
16
18
20
6
7
8
9
10
11
12
Tj = 25C
Tj = 125C
bertragungscharakteristik Wechselr. (typisch) I
C
= f (V
GE
)
Transfer characteristic Inverter (typical)
V
CE
= 20 V
0
2
4
6
8
10
12
14
16
18
20
0
0,5
1
1,5
2
2,5
3
Tj = 25C
Tj = 125C
6(12)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP10R12KE3
Vorlufig
Preliminary
600 V
100 Ohm
E [
m
Ws
]
I
C
[A]
600 V
E [
m
Ws
]
R
G
[
W]
Schaltverluste Wechselr. (typisch) E
on
= f (I
C
), E
off
= f (I
C
), E
rec
= f (I
C
)
V
CC
=
Switching losses Inverter (typical)
T
j
= 125C, V
GE
= 15 V, R
Gon
= R
Goff
=
0
0,5
1
1,5
2
2,5
3
100
120
140
160
180
200
220
Eon
Eoff
Erec
Schaltverluste Wechselr. (typisch) E
on
= f (R
G
), E
off
= f (R
G
), E
rec
= f (R
G
)
Switching losses Inverter (typical)
T
j
= 125C, V
GE
= +-15 V , I
c
= I
nenn
, V
CC
=
0
0,5
1
1,5
2
2,5
3
3,5
4
4,5
5
0
5
10
15
20
25
Eon
Eoff
Erec
7(12)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP10R12KE3
Vorlufig
Preliminary
Z
th
JH
[
K
/W
]
t [s]
100 Ohm
I
C
[A
]
V
CE
[V]
Transienter Wrmewiderstand Wechselr. Z
thJH
= f (t)
Transient thermal impedance Inverter
0,100
1,000
10,000
0,001
0,01
0,1
1
10
Zth-IGBT
Zth-FWD
i
1 2 3 4
IGBT: r
i
[K/W]: 169,8e-3 850,1e-3 667,8e-3 912,3e-3
t
i
[s]: 3e-6 78,7e-3 10,1e-3 225,6e-3
FWD: r
i
[K/W]: 245,4e-3 1,22 956,8e-3 1,27
t
i
[s]: 3e-6 80,4e-3 10,35e-3 227,3e-3
Sicherer Arbeitsbereich Wechselr. (RBSOA) I
C
= f (V
CE
)
Reverse bias save operating area Inverter (RBSOA)
T
vj
= 125C, V
GE
= 15V, R
G
=
IC,Chip
0
5
10
15
20
25
0
200
400
600
800
1000
1200
1400
8(12)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP10R12KE3
Vorlufig
Preliminary
I
C
[A
]
V
CE
[V]
I
F
[A
]
V
F
[V]
0
2
4
6
8
10
12
14
16
18
20
0,00
0,50
1,00
1,50
2,00
2,50
3,00
3,50
Tj = 25C
Tj = 125C
Durchlakennlinie der Brems-Chopper-Diode (typisch) I
F
= f (V
F
)
Forward characteristic of brake-chopper-FWD (typical)
Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) I
C
= f (V
CE
)
Output characteristic brake-chopper-IGBT (typical)
V
GE
= 15 V
0
2
4
6
8
10
12
14
16
18
20
0
0,5
1
1,5
2
2,5
3
3,5
Tj = 25C
Tj = 125C
9(12)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP10R12KE3
Vorlufig
Preliminary
I
F
[A
]
V
F
[V]
R[
W
]
T
C
[C]
Durchlakennlinie der Gleichrichterdiode (typisch) I
F
= f (V
F
)
Forward characteristic of Rectifier Diode (typical)
0
2
4
6
8
10
12
14
16
18
20
0
0,2
0,4
0,6
0,8
1
1,2
Tj = 25C
Tj = 150C
NTC- Temperaturkennlinie (typisch) R = f (T)
NTC- temperature characteristic (typical)
Rtyp
100
1000
10000
100000
0
20
40
60
80
100
120
140
10(12)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP10R12KE3
Vorlufig
Preliminary
Schaltplan/ Circuit diagram
Gehuseabmessungen/ Package outlines
J
Bohrplan /
drilling layout
11(12)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP10R12KE3
Gehuseabmessungen Forts. / Package outlines contd.
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Diese gilt in Verbindung mit den zugehrigen Technischen Erluterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
12(12)
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