Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FS 150 R17 KE3 G
vorlufige Daten
preliminary data
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
T
vj
= 25C
V
CES
1700
V
Kollektor-Dauergleichstrom
T
C
= 80 C
I
C,nom.
150
A
DC-collector current
T
C
= 25 C
I
C
240
A
Periodischer Kollektor Spitzenstrom
repetitive peak collctor current
t
P
= 1 ms, T
C
= 80C
I
CRM
300
A
Gesamt-Verlustleistung
total power dissipation
T
C
=25C, Transistor
P
tot
1040
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Dauergleichstrom
DC forward current
I
F
150
A
Periodischer Spitzenstrom
repetitive peak forw. current
tp = 1 ms
I
FRM
300
A
Grenzlastintegral der Diode
I
2
t - value, Diode
V
R
= 0V, t
p
= 10ms, T
Vj
= 125C
I
2
t
t.b.d
k A
2
s
Isolations-Prfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
V
ISOL
3,4
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
I
C
= 150A, V
GE
= 15V, T
vj
= 25C
V
CE sat
-
2,0
2,45
V
collector-emitter saturation voltage
I
C
= 150A, V
GE
= 15V, T
vj
= 125C
-
2,4
-
V
Gate-Schwellenspannung
gate threshold voltage
I
C
= 6mA, V
CE
= V
GE
, T
vj
= 25C
V
GE(th)
5,2
5,8
6,4
V
Gateladung
gate charge
V
GE
= -15V ... +15V
Q
G
-
1,7
-
C
Eingangskapazitt
input capacitance
f = 1MHz,T
vj
= 25C,V
CE
= 25V, V
GE
= 0V
C
ies
-
12
-
nF
Rckwirkungskapazitt
reverse transfer capacitance
f = 1MHz,T
vj
= 25C,V
CE
= 25V, V
GE
= 0V
C
res
-
0,45
-
nF
V
CE
= 1700V, V
GE
= 0V, T
vj
= 25C
-
-
5
mA
V
CE
= 1700V, V
GE
= 0V, T
vj
= 125C
-
-
-
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25C
I
GES
-
-
400
nA
prepared by: Alfons Wiesenthal
date of publication: 2002-07-25
approved by: Christoph Lbke
revision: 2.0
Kollektor-Emitter Reststrom
collector-emitter cut-off current
I
CES
1/8
DB_FS150R17KE3G_2.0.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FS 150 R17 KE3 G
vorlufige Daten
preliminary data
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Einschaltverzgerungszeit (ind. Last)
I
C
= 150A, V
CE
= 900V
turn on delay time (inductive load)
V
GE
= 15V, R
G
= 9,1
W, T
vj
= 25C
t
d,on
-
0,20
-
s
V
GE
= 15V, R
G
= 9,1
W, T
vj
= 125C
-
0,22
-
s
Anstiegszeit (induktive Last)
I
C
= 150A, V
CE
= 900V
rise time (inductive load)
V
GE
= 15V, R
G
= 9,1
W, T
vj
= 25C
t
r
-
0,10
-
s
V
GE
= 15V, R
G
= 9,1
W, T
vj
= 125C
-
0,10
-
s
Abschaltverzgerungszeit (ind. Last)
I
C
= 150A, V
CE
= 900V
turn off delay time (inductive load)
V
GE
= 15V, R
G
= 9,1
W, T
vj
= 25C
t
d,off
-
0,72
-
s
V
GE
= 15V, R
G
= 9,1
W, T
vj
= 125C
-
0,88
-
s
Fallzeit (induktive Last)
I
C
= 150A, V
CE
= 900V
fall time (inductive load)
V
GE
= 15V, R
G
= 9,1
W, T
vj
= 25C
t
f
-
0,10
-
s
V
GE
= 15V, R
G
= 9,1
W, T
vj
= 125C
-
0,20
-
s
Einschaltverlustenergie pro Puls
I
C
= 150A, V
CE
= 900V, V
GE
= 15V
turn-on energy loss per pulse
R
G
= 9,1
W, T
vj
= 125C, L
s
= 80nH
E
on
-
60
-
mJ
Abschaltverlustenergie pro Puls
I
C
= 150A, V
CE
= 900V, V
GE
= 15V
turn-off energy loss per pulse
R
G
= 9,1
W, T
vj
= 125C, L
s
= 80nH
E
off
-
50
-
mJ
Kurzschluverhalten
t
P
10sec, V
GE
15V
SC Data
T
Vj
125C, V
CC
=1000V, V
CEmax
=V
CES
-L
sCE
di/dt
I
SC
-
560
-
A
Modulinduktivitt
stray inductance module
L
sCE
-
20
-
nH
Modulleitungswiderstand, Anschlsse - Chip
module lead resistance, terminals - chip
pro Zweig / per arm, T
C
= 25C
R
CC+EE
-
1,1
-
m
W
Charakteristische Werte / Characteristic values
Diode / Diode
min.
typ.
max.
Durchlaspannung
I
F
= 150A, V
GE
= 0V, T
vj
= 25C
V
F
-
1,8
2,2
V
forward voltage
I
F
= 150A, V
GE
= 0V, T
vj
= 125C
-
1,9
t.b.d.
V
Rckstromspitze
I
F
= 150A, - di
F
/dt = 2200A/s
peak reverse recovery current
V
R
= 900V, V
GE
= -15V, T
vj
= 25C
I
RM
-
185
-
A
V
R
= 900V, V
GE
= -15V, T
vj
= 125C
-
200
-
A
Sperrverzgerungsladung
I
F
= 150A, - di
F
/dt = 2200A/s
recovered charge
V
R
= 900V, V
GE
= -15V, T
vj
= 25C
Q
r
-
40
-
C
V
R
= 900V, V
GE
= -15V, T
vj
= 125C
-
65
-
C
Abschaltenergie pro Puls
I
F
= 150A, - di
F
/dt = 2200A/s
reverse recovery energy
V
R
= 900V, V
GE
= -15V, T
vj
= 25C
E
rec
-
20
-
mJ
V
R
= 900V, V
GE
= -15V, T
vj
= 125C
-
35
-
mJ
2/8
DB_FS150R17KE3G_2.0.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FS 150 R17 KE3 G
vorlufige Daten
preliminary data
Charakteristische Werte / Characteristic values
NTC - Widerstand / NTC - thermistor
min.
typ.
max.
Nennwiderstand
rated resistance
T
C
= 25C
R
25
-
5
-
k
W
Abweichung von R
100
devitation of R
100
T
C
= 100C; R
100
= 493
W
DR/R
-5
-
5
%
Verlustleistung
Power dissipation
T
C
= 25C
P
25
-
-
20
mW
B - Wert
B - value
R2= R1 exp[B(1/T2 - 1/T1)]
B
25/50
-
3375
-
K
Thermische Eigenschaften / Thermal properties
min.
typ.
max.
Innerer Wrmewiderstand
Transistor / transistor, DC
R
thJC
-
-
0,120
K/W
thermal resistance, junction to case
Diode/Diode, DC
R
thJC
-
-
0,210
K/W
bergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Modul / per module
l
Paste
= 1 W/m*K /
l
grease
= 1 W/m*K
R
thCK
-
0,005
-
K/W
Hchstzulssige Sperrschichttemperatur
maximum junction temperature
T
vj max
-
-
150
C
Betriebstemperatur
operation temperature
T
vjop
-40
-
125
C
Lagertemperatur
storage temperature
T
stg
-40
-
125
C
Mechanische Eigenschaften / Mechanical properties
Gehuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
Al
2
O
3
Kriechstrecke
creepage distance
14
mm
Luftstrecke
clearance
10
mm
CTI
comperative tracking index
225
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Anzugsdrehmoment f. elektr. Anschlsse
terminal connection torque
Gewicht
weight
G
916
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehrigen Technischen Erluterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
3
-
6
Nm
3
-
6
Nm
Anschlsse / terminals M6
Schraube / screw M5
M
M
3/8
DB_FS150R17KE3G_2.0.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FS 150 R17 KE3 G
vorlufige Daten
preliminary data
I
C
[A]
V
CE
[V]
I
C
[A]
V
CE
[V]
0
50
100
150
200
250
300
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
Tvj = 25C
Tvj = 125C
Ausgangskennlinie (typisch) I
C
= f (V
CE
)
Output characteristic (typical)
V
GE
= 15V
0
50
100
150
200
250
300
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
VGE=9V
VGE=11V
VGE=13V
VGE=15V
VGE=19V
Ausgangskennlinienfeld (typisch) I
C
= f (V
CE
)
Output characteristic (typical)
T
vj
= 125C
4/8
DB_FS150R17KE3G_2.0.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FS 150 R17 KE3 G
vorlufige Daten
preliminary data
I
C
[A]
V
GE
[V]
I
F
[A]
V
F
[V]
0
50
100
150
200
250
300
5
6
7
8
9
10
11
Tvj = 25C
Tvj = 125C
bertragungscharakteristik (typisch) I
C
= f (V
GE
)
Transfer characteristic (typical)
V
CE
= 20V
0
50
100
150
200
250
300
0,0
0,5
1,0
1,5
2,0
2,5
3,0
Tvj = 25C
Tvj = 125C
Durchlakennlinie der Inversdiode (typisch) I
F
= f (V
F
)
Forward characteristic of inverse diode (typical)
5/8
DB_FS150R17KE3G_2.0.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FS 150 R17 KE3 G
vorlufige Daten
preliminary data
E [
m
J]
I
C
[A]
E [
m
J]
R
G
[
W]
0
50
100
150
200
250
300
0
50
100
150
200
250
300
Eon
Eoff
Erec
Schaltverluste (typisch) E
on
= f (I
C
) , E
off
= f (I
C
) , E
rec
= f (I
C
)
Switching losses (typical)
V
GE
= 15V, R
Gon
= R
Goff
=9,1
W, V
CE
= 900V, T
vj
= 125C
0
50
100
150
200
250
300
0
10
20
30
40
50
60
70
80
90
Eon
Eoff
Erec
Schaltverluste (typisch) E
on
= f (R
G
) , E
off
= f (R
G
) , E
rec
= f (R
G
)
Switching losses (typical)
V
GE
= 15V, I
C
= 150A , V
CE
= 900V , T
vj
= 125C
6/8
DB_FS150R17KE3G_2.0.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FS 150 R17 KE3 G
vorlufige Daten
preliminary data
i
1
2
3
4
r
i
[K/kW]
: IGBT
30,54
45,13
34,85
9,479
t
i
[s]
: IGBT
0,01565
0,03977
0,07521
1,443
r
i
[K/kW]
: Diode
71,17
78,97
50,01
9,856
t
i
[s]
: Diode
0,02103
0,03011
0,08672
1,1583
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
V
GE
=15V, R
G
= 9,1 Ohm, T
vj
= 125C
0
50
100
150
200
250
300
350
0
200
400
600
800
1000
1200
1400
1600
1800
V
CE
[V]
I
C
[A]
IC,Chip
Transienter Wrmewiderstand Z
thJC
= f (t)
Transient thermal impedance
0,001
0,01
0,1
1
0,001
0,01
0,1
1
10
t [s]
Z
thJC
[K/W]
Zth:Diode
Zth:IGBT
7/8
DB_FS150R17KE3G_2.0.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FS 150 R17 KE3
vorlufige Daten
preliminary data
8/8
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