vorlufige Daten
preliminary data
T
C
=
75 C
I
C,nom.
15
A
T
C
=
25 C
I
C
20
A
min.
typ.
max.
-
1,95
2,55
V
-
2,20
-
V
date of publication:
2002-12-17
revision: 2.0
gate threshold voltage
Rckwirkungskapazitt
reverse transfer capacitance
V
CE
= V
GE
, T
vj
= 25C, I
C
=
Eingangskapazitt
input capacitance
f= 1MHz, T
vj
= 25C, V
CE
= 25V, V
GE
= 0V
nF
-
0,06
f= 1MHz, T
vj
= 25C, V
CE
= 25V, V
GE
= 0V
-
C
res
V
CE
=
V
GE
= -15V...+15V
Q
G
-
gate charge
Gateladung
prepared by: P. Kanschat
Kollektor Emitter Reststrom
approved: M. Hierholzer
collector emitter cut off current
V, V
GE
= 0V, T
vj
= 25C
600
V
CE
= 0V, V
GE
= 20V, T
vj
= 25C
V
GES
repetitive peak forward current
V
CEsat
Charakteristische Werte / characteristic values
Periodischer Spitzenstrom
V
R
= 0V, t
p
= 10ms, T
vj
= 125C
Isolations Prfspannung
RMS, f= 50Hz, t= 1min
Transistor Wechselrichter / transistor inverter
kV
V
CES
V
V
ISOL
V
As
W
It
2,5
Technische Information / technical information
FS15R06XL4
IGBT-Module
IGBT-Modules
Gate Emitter Spitzenspannung
Gate Schwellenspannung
gate emitter peak voltage
Dauergleichstrom
Kollektor Emitter Sttigungsspannung
DC forward current
insulation test voltage
It value
DC collector current
Hchstzulssige Werte / maximum rated values
Kollektor Emitter Sperrspannung
Kollektor Dauergleichstrom
collector emitter voltage
Elektrische Eigenschaften / electrical properties
T
vj
= 25 C
A
repetitive peak collector current
Periodischer Kollektor Spitzenstrom
P
tot
T
c
= 25C, Transistor
Gesamt Verlustleistung
total power dissipation
t
p
= 1ms, T
C
= 75 C
t
p
= 1ms
I
FRM
A
A
I
CRM
6,5
Grenzlastintegral
34
I
F
collector emitter saturation voltage
0,4
V
GE
= 15V, T
vj
= 25C, I
C
= I
C,nom
V
GE
= 15V, T
vj
= 125C, I
C
= I
C,nom
mA
4,5
-
V
nF
0,675
-
0,08
-
C
5,5
-
-
nA
gate emitter leakage current
Gate Emitter Reststrom
I
GES
-
400
V
GE(th)
C
ies
I
CES
600
30
81
+20
15
30
-
5
mA
1 (8)
vorlufige Daten
preliminary data
Technische Information / technical information
FS15R06XL4
IGBT-Module
IGBT-Modules
min.
typ.
max.
I
C
=
15
18
-
20
-
ns
18
-
21
-
ns
I
C
=
15
18
-
7
-
ns
18
-
8
-
ns
I
C
=
15
18
-
80
-
ns
18
-
110
-
ns
I
C
=
15
18
-
18
-
ns
18
-
25
-
ns
I
C
=
15
R
G
= 18
15 nH
I
C
=
15
R
G
= 18
15 nH
V
CC
=
I
F
= 15
-
1,4
2
V
I
F
= 15
-
1,35
-
V
I
F
= 15
A/s
V
R
=
-
36
-
A
V
R
=
-
37
-
A
I
F
= 15
A/s
V
R
=
-
0,9
-
C
V
R
=
-
1,4
-
C
I
F
= 15
A/s
V
R
=
-
0,25
-
mJ
V
R
=
-
0,35
-
mJ
Rckstromspitze
peak reverse recovery current
300 V
300 V, V
GE
= -10V, T
vj
= 25C
300 V
300 V, V
GE
= -10V, T
vj
= 125C
Charakteristische Werte / characteristic values
300
V
, T
vj
= 125C
, T
vj
= 125C
V
GE
= 15V, R
G
=
V
GE
= 15V, R
G
=
, T
vj
= 25C
, T
vj
= 125C
V
300
A, V
CC
=
A, V
GE
= 0V, T
vj
= 25C
A, V
GE
= 0V, T
vj
= 125C
, T
vj
= 125C
V
GE
= 15V, R
G
=
V
GE
= 15V, R
G
=
, T
vj
= 25C
A, V
CC
= 300
Einschaltverzgerungszeit (induktive Last)
turn on delay time (inductive load)
lead resistance, terminal-chip
V
F
forward voltage
A, V
CC
=
E
off
300 V
A, V
CC
=
V
GE
= 15V, R
G
=
Anstiegszeit (induktive Last)
rise time (inductive load)
t
r
A, V
CC
= 300 V
V
GE
= 15V, R
G
=
, T
vj
= 25C
V
GE
= 15V, R
G
=
Abschaltverzgerungszeit (induktive Last)
turn off delay time (inductive load)
Einschaltverlustenergie pro Puls
2000
300 V, V
GE
= -10V, T
vj
= 25C
A, -di
F
/dt =
, T
vj
= 25C
Transistor Wechselrichter / transistor inverter
V
GE
= 15V, R
G
=
m
Charakteristische Werte / characteristic values
mJ
-
mJ
E
on
0,45
t
d,off
-
t
f
SC data
Leitungswiderstand, Anschluss-Chip
A, V
CC
=
, T
vj
= 125C, L
=
360 V, V
CEmax
=V
CES
-L
CE
|di/dt|
, T
vj
= 125C, L
=
Diode Wechselrichter / diode inverter
Ausschaltenergie pro Puls
reverse recovery energy
turn off energy loss per pulse
V, V
GE
= -10V, T
vj
= 125C
Fallzeit (induktive Last)
fall time (inductive load)
Kurzschlussverhalten
t
P
10sec, V
GE
15V, T
vj
= 125C,
nH
stray inductance module
Modulinduktivitt
L
CE
-
25
-
A
68
-
E
rec
I
RM
-
-
I
SC
-
t
d,on
300 V, V
GE
= -10V, T
vj
= 125C
A, -di
F
/dt =
2000
-
Q
r
Sperrverzgerungsladung
recovered charge
Durchlassspannung
-
0,30
8
turn on energy loss per pulse
Ausschaltverlustenergie pro Puls
R
CC/EE
T
c
= 25C
A, -di
F
/dt =
2000
300 V, V
GE
= -10V, T
vj
= 25C
2 (8)
vorlufige Daten
preliminary data
Technische Information / technical information
FS15R06XL4
IGBT-Module
IGBT-Modules
min.
typ.
max.
-
-
1,55
K/W
-
- 2,70
K/W
-
1,90
-
K/W
- 3,20
- K/W
-
0,65
-
K/W
-
0,85
-
K/W
creepage distance
Innere Isolation
internal insulation
CTI
comperative tracking index
F
T
c
= 25C
P
25
power dissipation
thermal resistance, junction to heatsink; DC
Hchstzulssige Sperrschichttemp.
Thermische Eigenschaften / thermal properties
R
thCH
bergangs-Wrmewiderstand, DC
thermal resistance, case to heatsink, DC
-5
-
5
Verlustleistung
T
c
= 100C, R
100
= 493
R/R
deviation of R
100
-
-
Abweichung von R
100
Wrmewiderstand; DC
%
-
5
R
25
k
-
T
c
= 25C
rated resistance
Charakteristische Werte / characteristic values
NTC-Widerstand / NTC-thermistor
Nennwiderstand
20
-
-
-40
-
125
-
3375
-
150
mW
K
Paste
= 1 W/m*K /
grease
= 1 W/m*K
Transistor Wechselr. / transistor inverter
Diode Wechselrichter / diode inverter
R
thJC
Transistor Wechselr. / transistor inverter
Diode Wechselrichter / diode inverter
Paste
= 1 W/m*K /
grease
= 1 W/m*K
B-Wert
R
2
= R
1
exp[B(1/T
2
- 1/T
1
)]
B
25/50
T
vjmax
B-value
Innerer Wrmewiderstand; DC
thermal resistance, junction to case; DC
Transistor Wechselr. / transistor inverter
Diode Wechselrichter / diode inverter
R
thJH
-40
weight
Lagertemperatur
Gewicht
Kriechstrecke
Anschluss - Khlkrper
20..50
Mechanische Eigenschaften / mechanical properties
mm
-
125
C
g
N
25
operation temperature
maximum junction temperature
Betriebstemperatur
terminal to terminal
Anschluss - Anschluss
terminal to heatsink
storage temperature
10,5
Anschluss - Anschluss
Luftstrecke
Anschluss - Khlkrper
Anpresskraft pro Feder
mounting force per clamp
terminal to terminal
clearance distance
terminal to heatsink
mm
mm
5
mm
5
9
225
C
G
Al
2
O
3
T
stg
T
op
C
3 (8)
vorlufige Daten
preliminary data
Technische Information / technical information
FS15R06XL4
IGBT-Module
IGBT-Modules
I
C
= f(V
CE
)
V
GE
= 15V
T
vj
= 125C
output characteristic (typical)
Ausgangskennlinienfeld (typisch)
I
C
= f(V
CE
)
Ausgangskennlinie (typisch)
output characteristic (typical)
0
10
20
30
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE
[V]
I
C
[A]
Tvj = 25C
Tvj = 125C
0
10
20
30
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
V
CE
[V]
I
C
[A]
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
VGE = 8V
4 (8)
vorlufige Daten
preliminary data
Technische Information / technical information
FS15R06XL4
IGBT-Module
IGBT-Modules
I
C
= f(V
GE
)
V
CE
= 20V
Durchlasskennlinie der Inversdiode (typisch)
I
F
= f(V
F
)
forward characteristic of inverse diode (typical)
bertragungscharakteristik (typisch)
transfer characteristic (typical)
0
10
20
30
5
6
7
8
9
10
11
12
13
V
GE
[V]
I
C
[A]
Tvj = 25C
Tvj = 125C
0
10
20
30
0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
1,6
1,8
V
F
[V]
I
F
[A]
Tvj = 25C
Tvj = 125C
5 (8)
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