vorlufige Daten
preliminary data
T
C
=
60 C
I
C,nom.
30
A
T
C
=
25 C
I
C
35
A
min.
typ.
max.
-
1,95
2,55
V
-
2,20
-
V
date of publication:
2002-12-17
revision: 2.0
2,5
600
60
119
+20
30
60
-
5
It
mA
Gateladung
V
GE
= -15V...+15V
gate threshold voltage
V
GE
= 15V, T
vj
= 125C, I
C
= I
C,nom
gate charge
V
CE
= V
GE
, T
vj
= 25C, I
C
=
0,7
-
-
4,5
-
-
V
nF
1,35
-
0,16
-
C
5,5
6,5
I
F
C
t
p
= 1ms
I
FRM
A
repetitive peak collector current
110
Periodischer Kollektor Spitzenstrom
P
tot
T
c
= 25C, Transistor
Gesamt Verlustleistung
total power dissipation
t
p
= 1ms, T
C
= 60
Hchstzulssige Werte / maximum rated values
Kollektor Emitter Sperrspannung
Kollektor Dauergleichstrom
collector emitter voltage
Elektrische Eigenschaften / electrical properties
T
vj
= 25 C
DC collector current
Gate Emitter Spitzenspannung
Gate Schwellenspannung
gate emitter peak voltage
Dauergleichstrom
Kollektor Emitter Sttigungsspannung
DC forward current
insulation test voltage
Grenzlastintegral
collector emitter saturation voltage
It value
V
GE
= 15V, T
vj
= 25C, I
C
= I
C,nom
prepared by: P. Kanschat
Kollektor Emitter Reststrom
reverse transfer capacitance
Rckwirkungskapazitt
Eingangskapazitt
V
CE
= 0V, V
GE
= 20V, T
vj
= 25C
input capacitance
mA
approved: M. Hierholzer
collector emitter cut off current
gate emitter leakage current
Gate Emitter Reststrom
Technische Information / technical information
FS30R06XL4
IGBT-Module
IGBT-Modules
kV
V
CES
V
A
I
CRM
V
ISOL
V
As
W
A
V
GES
repetitive peak forward current
V
CEsat
Charakteristische Werte / characteristic values
Periodischer Spitzenstrom
V
R
= 0V, t
p
= 10ms, T
vj
= 125C
Isolations Prfspannung
RMS, f= 50Hz, t= 1min
Transistor Wechselrichter / transistor inverter
I
GES
nF
-
0,12
-
C
res
I
CES
nA
-
400
V
CE
=
Q
G
600 V, V
GE
= 0V, T
vj
= 25C
C
ies
f= 1MHz, T
vj
= 25C, V
CE
= 25V, V
GE
= 0V
f= 1MHz, T
vj
= 25C, V
CE
= 25V, V
GE
= 0V
V
GE(th)
1 (8)
vorlufige Daten
preliminary data
Technische Information / technical information
FS30R06XL4
IGBT-Module
IGBT-Modules
min.
typ.
max.
I
C
=
30
8,2
-
20
-
ns
8,2
-
21
-
ns
I
C
=
30
8,2
-
7
-
ns
8,2
-
8
-
ns
I
C
=
30
8,2
-
80
-
ns
8,2
-
110
-
ns
I
C
=
30
8,2
-
18
-
ns
8,2
-
25
-
ns
I
C
=
30
R
G
= 8,2
15 nH
I
C
=
30
R
G
= 8,2
15 nH
V
CC
=
I
F
= 30
-
1,4
2
V
I
F
= 30
-
1,35
-
V
I
F
= 30
A/s
V
R
=
-
72
-
A
V
R
=
-
74
-
A
I
F
= 30
A/s
V
R
=
-
1,7
-
C
V
R
=
-
2,8
-
C
I
F
= 30
A/s
V
R
=
-
0,55
-
mJ
V
R
=
-
0,75
-
mJ
V, V
GE
= -10V, T
vj
= 125C
A, V
GE
= 0V, T
vj
= 25C
Sperrverzgerungsladung
recovered charge
A, -di
F
/dt =
4000
300 V, V
GE
= -10V, T
vj
= 25C
nH
-
-
A
turn on energy loss per pulse
Ausschaltverlustenergie pro Puls
V
A, V
CC
=
300 V
4000
300
A, V
GE
= 0V, T
vj
= 125C
4000
300 V, V
GE
= -10V, T
vj
= 25C
300 V, V
GE
= -10V, T
vj
= 125C
stray inductance module
Modulinduktivitt
300 V, V
GE
= -10V, T
vj
= 125C
A, -di
F
/dt =
A, -di
F
/dt =
300 V, V
GE
= -10V, T
vj
= 25C
Kurzschlussverhalten
t
P
10sec, V
GE
15V, T
vj
= 125C,
I
SC
-
E
off
135
A, V
CC
=
Diode Wechselrichter / diode inverter
Ausschaltenergie pro Puls
reverse recovery energy
turn off energy loss per pulse
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
Q
r
E
rec
-
-
0,65
-
-
-
8
25
R
CC/EE
T
c
= 25C
SC data
Leitungswiderstand, Anschluss-Chip
lead resistance, terminal-chip
L
CE
m
Charakteristische Werte / characteristic values
mJ
-
mJ
E
on
0,95
t
d,off
-
t
f
V
F
forward voltage
Rckstromspitze
peak reverse recovery current
I
RM
Durchlassspannung
Charakteristische Werte / characteristic values
Transistor Wechselrichter / transistor inverter
t
d,on
Anstiegszeit (induktive Last)
rise time (inductive load)
t
r
Einschaltverzgerungszeit (induktive Last)
turn on delay time (inductive load)
Abschaltverzgerungszeit (induktive Last)
turn off delay time (inductive load)
300 V
A, V
CC
=
V
GE
= 15V, R
G
=
V
GE
= 15V, R
G
=
, T
vj
= 25C
, T
vj
= 125C
V
300
V
GE
= 15V, R
G
=
, T
vj
= 25C
V
GE
= 15V, R
G
=
, T
vj
= 125C
A, V
CC
=
, T
vj
= 125C
V
GE
= 15V, R
G
=
A, V
CC
=
300 V
V
GE
= 15V, R
G
=
, T
vj
= 25C
V
GE
= 15V, R
G
=
, T
vj
= 25C
V
GE
= 15V, R
G
=
, T
vj
= 125C
A, V
CC
=
300 V
, T
vj
= 125C, L
=
, T
vj
= 125C, L
=
360 V, V
CEmax
=V
CES
-L
CE
|di/dt|
300
2 (8)
vorlufige Daten
preliminary data
Technische Information / technical information
FS30R06XL4
IGBT-Module
IGBT-Modules
min.
typ.
max.
-
-
1,05
K/W
-
- 2,00
K/W
-
1,35
-
K/W
- 2,35
- K/W
-
0,40
-
K/W
-
0,60
-
K/W
R
thJC
C
terminal to heatsink
N
Transistor Wechselr. / transistor inverter
Diode Wechselrichter / diode inverter
225
mm
mm
5
mm
Innerer Wrmewiderstand; DC
thermal resistance, junction to case; DC
5
R
thCH
Anschluss - Khlkrper
9
Anpresskraft pro Feder
mounting force per clamp
terminal to terminal
clearance distance
terminal to heatsink
Anschluss - Anschluss
Luftstrecke
Kriechstrecke
Anschluss - Khlkrper
Anschluss - Anschluss
terminal to terminal
bergangs-Wrmewiderstand, DC
Transistor Wechselr. / transistor inverter
Paste
= 1 W/m*K /
grease
= 1 W/m*K
thermal resistance, case to heatsink, DC
Diode Wechselrichter / diode inverter
T
stg
-40
Betriebstemperatur
Lagertemperatur
mm
-
125
20..50
g
10,5
-40
-
25
Al
2
O
3
C
C
150
Mechanische Eigenschaften / mechanical properties
storage temperature
operation temperature
maximum junction temperature
125
T
vjmax
T
op
B-Wert
R
2
= R
1
exp[B(1/T
2
- 1/T
1
)]
B
25/50
-
B-value
3375
-
-
-
Charakteristische Werte / characteristic values
NTC-Widerstand / NTC-thermistor
Nennwiderstand
T
c
= 25C
rated resistance
K
-
-
%
mW
20
deviation of R
100
Wrmewiderstand; DC
Transistor Wechselr. / transistor inverter
Diode Wechselrichter / diode inverter
5
R
25
-
k
Thermische Eigenschaften / thermal properties
-5
-
5
Verlustleistung
T
c
= 100C, R
100
= 493
R/R
-
Abweichung von R
100
T
c
= 25C
P
25
power dissipation
R
thJH
thermal resistance, junction to heatsink; DC
Hchstzulssige Sperrschichttemp.
comperative tracking index
F
creepage distance
Innere Isolation
internal insulation
CTI
weight
G
Gewicht
Paste
= 1 W/m*K /
grease
= 1 W/m*K
3 (8)
vorlufige Daten
preliminary data
Technische Information / technical information
FS30R06XL4
IGBT-Module
IGBT-Modules
I
C
= f(V
CE
)
V
GE
= 15V
Ausgangskennlinienfeld (typisch)
I
C
= f(V
CE
)
Ausgangskennlinie (typisch)
output characteristic (typical)
T
vj
= 125C
output characteristic (typical)
0
10
20
30
40
50
60
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE
[V]
I
C
[A]
Tvj = 25C
Tvj = 125C
0
10
20
30
40
50
60
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
V
CE
[V]
I
C
[A]
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
VGE = 8V
4 (8)
vorlufige Daten
preliminary data
Technische Information / technical information
FS30R06XL4
IGBT-Module
IGBT-Modules
I
C
= f(V
GE
)
V
CE
= 20V
Durchlasskennlinie der Inversdiode (typisch)
I
F
= f(V
F
)
forward characteristic of inverse diode (typical)
bertragungscharakteristik (typisch)
transfer characteristic (typical)
0
10
20
30
40
50
60
5
6
7
8
9
10
11
12
13
V
GE
[V]
I
C
[A]
Tvj = 25C
Tvj = 125C
0
10
20
30
40
50
60
0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
1,6
1,8
V
F
[V]
I
F
[A]
Tvj = 25C
Tvj = 125C
5 (8)
vorlufige Daten
preliminary data
Technische Information / technical information
FS30R06XL4
IGBT-Module
IGBT-Modules
V
GE
= 15V, R
Gon
=R
Goff
= 8,2
, V
CE
= 300V, T
vj
= 125C
E
on
= f(I
C
), E
off
= f(I
C
), E
rec
= f(I
C
)
Schaltverluste (typisch)
switching losses (typical)
Schaltverluste (typisch)
switching losses (typical)
E
on
= f (R
G
) , E
off
= f (R
G
) , E
rec
= f (R
G
)
V
GE
= 15V, I
C
= 30A, V
CE
= 300V, T
vj
= 125C
0
1
2
3
4
0
10
20
30
40
50
60
I
C
[A]
E [mJ]
Eon
Eoff
Erec
0
0,5
1
1,5
2
2,5
0
20
40
60
80
R
G
[
]
E [mJ]
Eon
Eoff
Erec
6 (8)
vorlufige Daten
preliminary data
Technische Information / technical information
FS30R06XL4
IGBT-Module
IGBT-Modules
Transienter Wrmewiderstand
transient thermal impedance
i
r
i
[K/kW]: IGBT
i
[s]: IGBT
r
i
[K/kW]: Diode
i
[s]: Diode
Sicherer Arbeitsbereich (RBSOA)
reverse bias safe operation area (RBSOA)
V
GE
=15V, T
j
=125C, R
G
= 8,2
Z
thJH
= f (t)
0,14540
0,00032
270,0
0,01290
470,0
0,00532
1
81,0
0,000529
141,0
0,10769
423,0
2
3
756,0
0,12731
4
243,0
0,19842
1316,0
0
20
40
60
80
0
200
400
600
V
CE
[V]
I
C
[A]
IC, Chip
IC, Modul
0,10
1,00
10,00
0,001
0,01
0,1
1
10
t (s)
Z
thJH
(K/W)
Zth:IGBT
Zth:Diode
7 (8)
vorlufige Daten
preliminary data
Technische Information / technical information
FS30R06XL4
IGBT-Module
IGBT-Modules
This technical information specifies semiconductor devices but promises no characteristics. It is valid with
the belonging technical notes.
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften
zugesichert. Sie gilt in Verbindung mit den zugehrigen technischen Erluterungen.
Schaltbild
circuit diagram
Gehusemae
package outline
Bohrplan
drilling layout
8 (8)
PDF 
ZIP