Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1000 R 25 KF1
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
2500
V
Kollektor-Dauergleichstrom
T
C
= 80 C
I
C,nom.
1000
A
DC-collector current
T
C
= 25 C
I
C
1600
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
= 80C
I
CRM
2000
A
Gesamt-Verlustleistung
total power dissipation
T
C
=25C, Transistor
P
tot
10,4
kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Dauergleichstrom
DC forward current
I
F
1000
A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1 ms
I
FRM
2000
A
Grenzlastintegral der Diode
I
2
t - value, Diode
V
R
= 0V, t
p
= 10ms, T
Vj
= 125C
I
2
t
400
kA
2
s
Isolations-Prfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
V
ISOL
5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
I
C
= 1000A, V
GE
= 15V, T
vj
= 25C
V
CE sat
-
3,0
3,5
V
collector-emitter saturation voltage
I
C
= 1000A, V
GE
= 15V, T
vj
= 125C
-
3,8
4,3
V
Gate-Schwellenspannung
gate threshold voltage
I
C
= 80mA, V
CE
= V
GE
, T
vj
= 25C
V
GE(th)
4,3
5,3
6,3
V
Gateladung
gate charge
V
GE
= -15V ... +15V
Q
G
-
18
-
C
Eingangskapazitt
input capacitance
f = 1MHz,T
vj
= 25C,V
CE
= 25V, V
GE
= 0V
C
ies
-
95
-
nF
Rckwirkungskapazitt
reverse transfer capacitance
f = 1MHz,T
vj
= 25C,V
CE
= 25V, V
GE
= 0V
C
res
-
8
-
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V
CE
= 2500V, V
GE
= 0V, T
vj
= 25C
I
CES
-
-
20
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25C
I
GES
-
-
400
nA
prepared by: Oliver Schilling
date of publication: 01.09.2001
approved by: Thomas Schtze
revision: 3
1
FZ101@3.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1000 R 25 KF1
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Einschaltverzgerungszeit (ind. Last)
I
C
= 1000A, V
CE
= 1200V
turn on delay time (inductive load)
V
GE
= 15V, R
G
= 1,3
, C
GE
=136nF, T
vj
= 25C,
t
d,on
-
1,4
-
s
V
GE
= 15V, R
G
= 1,3
, C
GE
=136nF, T
vj
= 125C,
-
1,5
-
s
Anstiegszeit (induktive Last)
I
C
= 1000A, V
CE
= 1200V
rise time (inductive load)
V
GE
= 15V, R
G
= 1,3
, C
GE
=136nF, T
vj
= 25C,
t
r
-
0,25
-
s
V
GE
= 15V, R
G
= 1,3
, C
GE
=136nF, T
vj
= 125C,
-
0,25
-
s
Abschaltverzgerungszeit (ind. Last)
I
C
= 1000A, V
CE
= 1200V
turn off delay time (inductive load)
V
GE
= 15V, R
G
= 2,7
, C
GE
=136nF, T
vj
= 25C,
t
d,off
-
2,2
-
s
V
GE
= 15V, R
G
= 2,7
, C
GE
=136nF, T
vj
= 125C,
-
2,2
-
s
Fallzeit (induktive Last)
I
C
= 1000A, V
CE
= 1200V
fall time (inductive load)
V
GE
= 15V, R
G
= 2,7
, C
GE
=136nF, T
vj
= 25C,
t
f
-
0,2
-
s
V
GE
= 15V, R
G
= 2,7
, C
GE
=136nF, T
vj
= 125C,
-
0,2
-
s
Einschaltverlustenergie pro Puls
I
C
= 1000A, V
CE
= 1200V, V
GE
= 15V
turn-on energy loss per pulse
R
G
= 1,3
, C
GE
=136nF, T
vj
= 125C , L
S
= 60nH
E
on
-
1400
-
mWs
Abschaltverlustenergie pro Puls
I
C
= 1000A, V
CE
= 1200V, V
GE
= 15V
turn-off energy loss per pulse
R
G
= 2,7
, C
GE
=136nF, T
vj
= 125C , L
S
= 60nH
E
off
-
1000
-
mWs
Kurzschluverhalten
t
P
10sec, V
GE
15V
SC Data
T
Vj
125C, V
CC
=1200V, V
CEmax
=V
CES
-L
sCE
dI/dt
I
SC
-
4000
-
A
Modulinduktivitt
stray inductance module
L
sCE
-
12
-
nH
Modulleitungswiderstand, Anschlsse - Chip
module lead resistance, terminals - chip
R
CC+EE
-
0,19
-
m
Diode / Diode
min.
typ.
max.
Durchlaspannung
I
F
= 1000A, V
GE
= 0V, T
vj
= 25C
V
F
-
2,3
2,7
V
forward voltage
I
F
= 1000A, V
GE
= 0V, T
vj
= 125C
-
2,3
2,7
V
Rckstromspitze
I
F
= 1000A, - di
F
/dt = 4000A/s
peak reverse recovery current
V
R
= 1200V, VGE = -10V, T
vj
= 25C
I
RM
-
950
-
A
V
R
= 1200V, VGE = -10V, T
vj
= 125C
-
1000
-
A
Sperrverzgerungsladung
I
F
= 1000A, - di
F
/dt = 4000A/s
recovered charge
V
R
= 1200V, VGE = -10V, T
vj
= 25C
Q
r
-
520
-
As
V
R
= 1200V, VGE = -10V, T
vj
= 125C
-
900
-
As
Abschaltenergie pro Puls
I
F
= 1000A, - di
F
/dt = 4000A/s
reverse recovery energy
V
R
= 1200V, VGE = -10V, T
vj
= 25C
E
rec
-
340
-
mWs
V
R
= 1200V, VGE = -10V, T
vj
= 125C
-
650
-
mWs
2
FZ101@3.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1000 R 25 KF1
Thermische Eigenschaften / Thermal properties
min.
typ.
max.
Innerer Wrmewiderstand
Transistor / transistor, DC
R
thJC
-
-
0,012
K/W
thermal resistance, junction to case
Diode/Diode, DC
-
-
0,024
K/W
bergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Modul / per Module
Paste
1 W/m*K /
grease
1 W/m*K
R
thCK
-
0,008
-
K/W
Hchstzulssige Sperrschichttemperatur
maximum junction temperature
T
vj
-
-
150
C
Betriebstemperatur Sperrschicht
junction operation temperature
Schaltvorgnge IGBT(RBSOA);Diode(SOA)
switching operation IGBT(RBSOA);Diode(SOA)
T
vj,op
-40
-
125
C
Lagertemperatur
storage temperature
T
stg
-40
-
125
C
Mechanische Eigenschaften / Mechanical properties
Gehuse, siehe Anlage
case, see appendix
Material Modulbodenplatte
material of module baseplate
AlSiC
Innere Isolation
internal insulation
AlN
Kriechstrecke
creepage distance
32
mm
Luftstrecke
clearance
19,1
mm
CTI
comperative tracking index
>400
Anzugsdrehmoment f. mech. Befestigung
M1
5
Nm
mounting torque
Anzugsdrehmoment f. elektr. Anschlsse
terminals M4
M2
2
Nm
terminal connection torque
terminals M8
8 - 10
Nm
Gewicht
weight
G
1000
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehrigen Technischen Erluterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
3
FZ101@3.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1000 R 25 KF1
I
C
[A]
V
CE
[V]
I
C
[A]
V
CE
[V]
0
250
500
750
1000
1250
1500
1750
2000
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
5,5
6,0
Tj = 25C
Tj = 125C
Ausgangskennlinie (typisch) I
C
= f (V
CE
)
Output characteristic (typical)
V
GE
= 15V
0
250
500
750
1000
1250
1500
1750
2000
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
5,5
6,0
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
VGE = 8V
Ausgangskennlinienfeld (typisch) I
C
= f (V
CE
)
Output characteristic (typical)
T
vj
= 125C
4
FZ101@3.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1000 R 25 KF1
I
C
[A]
V
GE
[V]
I
F
[A]
V
F
[V]
0
250
500
750
1000
1250
1500
1750
2000
5
6
7
8
9
10
11
12
13
Tj = 25C
Tj = 125C
bertragungscharakteristik (typisch) I
C
= f (V
GE
)
Transfer characteristic (typical)
V
CE
= 10V
0
250
500
750
1000
1250
1500
1750
2000
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
Tj = 25C
Tj = 125C
Durchlakennlinie der Inversdiode (typisch) I
F
= f (V
F
)
Forward characteristic of inverse diode (typical)
5
FZ101@3.xls
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