FZ 1200 R 12 KF4
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
1200 V
Kollektor-Dauergleichstrom
DC-collector current
I
C
1200 A
Periodischer Kollektor Spitzenstrom
repetitive peak collctor current
t
p
=1 ms
I
CRM
2400 A
Gesamt-Verlustleistung
total power dissipation
t
C
=25C, Transistor /transistor
P
tot
7800 W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GE
20 V
Dauergleichstrom
DC forward current
I
F
1200 A
Periodischer Spitzenstrom
repetitive peak forw. current
t
p
=1ms
I
FRM
2400 A
Isolations-Prfspannung
insulation test voltage
RMS, f=50 Hz, t= 1 min.
V
ISOL
2,5 kV
Charakteristische Werte / Characteristic values: Transistor
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
i
C
=1,2kA, v
GE
=15V, t
vj
=25C
v
CE sat
-
2,7
3,2 V
i
C
=1,2kA, v
GE
=15V, t
vj
=125C
-
3,3
3,9 V
Gate-Schwellenspannung
gate threshold voltage
i
C
=48mA, v
CE
=v
GE
, t
vj
=25C
v
GE(th)
4,5
5,5
6,5 V
Eingangskapazitt
input capacity
f
O
=1MHz,t
vj
=25C,v
CE
=25V, v
GE
=0V
C
ies
-
90
- nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
v
CE
=1200V, v
GE
=0V, t
vj
=25C
i
CES
-
16
- mA
v
CE
=1200V, v
GE
=0V, t
vj
=125C
-
100
200 mA
Gate-Emitter Reststrom
gate leakage current
v
CE
=0V, v
GE
=20V, t
vj
=25C
i
GES
-
-
400 nA
Emitter-Gate Reststrom
gate leakage current
v
CE
=0V, v
EG
=20V, t
vj
=25C
i
EGS
-
-
400 nA
Einschaltzeit (induktive Last)
turn-on time (inductive load)
i
C
=1,2kA,v
CE
=600V
t
on
vL = 15V, R
G
= 0,82 , t
vj
=25
0,7
- s
vL = 15V, R
G
= 0,82 , t
vj
=125
-
0,8
- s
Speicherzeit (induktive Last)
storage time (inductive load)
i
C
=1,2kA,v
CE
=600V
t
s
vL = 15V, R
G
= 0,82 , t
vj
=25
-
0,9
- s
vL = 15V, R
G
= 0,82 , t
vj
=125
-
1,0
- s
Fallzeit (induktive Last)
fall time (inductive load)
i
C
=1,2kA,v
CE
=600V
t
f
vL = 15V, R
G
= 0,82 , t
vj
=25
- 0,10
- s
vL = 15V, R
G
= 0,82 , t
vj
=125
- 0,15
- s
Einschaltverlustenergie pro Puls
turn-on energy loss per puls
i
C
=1,2kA, v
CE
=600V, L
s
=70nH
v
L
=15V,R
G
=0,82 ,T
vj
=125C
E
on
-
170
- mWs
Abschaltverlustleistung pro Puls
turn-off energy loss per puls
i
C
=1,2kA, v
CE
=600V, L
s
=70nH
v
L
=15V,R
G
=0,82 ,T
vj
=125C
E
off
-
190
- mWs
Charakteristische Werte / Characteristic values
Inversdiode / Inverse diode
Durchlaspannung
forward voltage
i
F
=1,2kA, v
GE
=0V, t
vj
=25C
v
F
-
2,2
2,7 V
i
F
=1,2kA, v
GE
=0V, t
vj
=125C
-
2,0
2,5 V
Rckstromspitze
peak reverse recovery current
i
F
=1,2kA, v
RM
=600V, v
EG
= 10V
I
RM
-di
F
/dt = 6 kA/s, t
vj
= 25C
-
400
- A
-
700
- A
Sperrverzgerungsladung
recovered charge
i
F
=1,2kA, v
RM
=600V, v
EG
= 10V
Q
r
-di
F
/dt = 6 kA/s, t
vj
= 25C
-
50
- As
-
150
- As
Thermische Eigenschaften / Thermal properties
Innerer Wrmewiderstand
thermal resistance, junction to case
Transistor / transistor, DC
R
thJC
0,016 C/W
Transistor,DC,pro Zweig/per arm
0,032 C/W
bergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Modul / per Module
R
thCK
0,008 C/W
Hchstzul. Sperrschichttemperatur
max. junction temperature
pro Modul / per Module
t
vj max
150 C
Betriebstemperatur
operating temperature
Transistor / transistor
t
c op
-40...+125 C
Lagertemperatur
storage temperature
t
stg
-40...+125 C
Mechanische Eigenschaften / Mechanical properties
Innere Isolation
internal insulation
AI
2
O
3
Anzugsdrehmoment f. mech. Befestigung
mounting torque
terminals M6 /
tolerance +/-15%
M1
5 Nm
Anzugsdrehmoment f. elektr. Anschlsse
terminal connection torque
terminals M4 /
tolerance +/-15%
M2
2 Nm
terminals M8
8...10 Nm
Gewicht
weight
G
ca. 1500 g
Bedingung fr den Kurzschluschutz / Conditions for short-circuit protection
t
fg
= 10 s
V
CC
= 750 V
v
L
= 15 V
v
CEM
= 900 V
R
GF
= R
GR
= 0,82
i
CMK1
10000 A
t
vj
= 125C
i
CMK2
8000 A
Unabhngig davon gilt bei abweichenden Bedingungen / with regard to other conditions
CEM
= V
CES
- 15nH x |di
c
/dt|
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den
zugehrigen Technischen Erluterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in
combination with the belonging technical notes.
v
t
vj
= 125C
t
vj
= 125C
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