Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 17 KF6 B2
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
1700
V
Kollektor-Dauergleichstrom
T
C
= 80 C
I
C,nom.
1200
A
DC-collector current
T
C
= 25 C
I
C
2400
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
= 80C
I
CRM
2400
A
Gesamt-Verlustleistung
total power dissipation
T
C
=25C, Transistor
P
tot
9,6
kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Dauergleichstrom
DC forward current
I
F
1200
A
Periodischer Spitzenstrom
repetitive peak forw. current
tp = 1 ms
I
FRM
2400
A
Grenzlastintegral der Diode
I
2
t - value, Diode
V
R
= 0V, t
p
= 10ms, T
Vj
= 125C
I
2
t
440
kA
2
s
Isolations-Prfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
V
ISOL
4
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
I
C
= 1200A, V
GE
= 15V, T
vj
= 25C
V
CE sat
2,6
3,1
V
collector-emitter saturation voltage
I
C
= 1200A, V
GE
= 15V, T
vj
= 125C
3,1
3,6
V
Gate-Schwellenspannung
gate threshold voltage
I
C
= 80mA, V
CE
= V
GE
, T
vj
= 25C
V
GE(th)
4,5
5,5
6,5
V
Gateladung
gate charge
V
GE
= -15V ... +15V
Q
G
14,5
C
Eingangskapazitt
input capacitance
f = 1MHz,T
vj
= 25C,V
CE
= 25V, V
GE
= 0V
C
ies
79
nF
Rckwirkungskapazitt
reverse transfer capacitance
f = 1MHz,T
vj
= 25C,V
CE
= 25V, V
GE
= 0V
C
res
4
nF
Kollektor-Emitter Reststrom
V
CE
= 1700V, V
GE
= 0V, T
vj
= 25C
I
CES
0,03
2,5
mA
collector-emitter cut-off current
V
CE
= 1700V, V
GE
= 0V, T
vj
= 125C
16
120
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25C
I
GES
400
nA
prepared by: Oliver Schilling
date of publication: 4.9.1998
approved by: Chr. Lbke; 08.10.99
revision: 2 (serie)
1(8)
FZ1200R17KF6B2
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Einschaltverzgerungszeit (ind. Last)
I
C
= 1200A, V
CE
= 900V
turn on delay time (inductive load)
V
GE
= 15V, R
G
= 1,2
, T
vj
= 25C
t
d,on
0,3
s
V
GE
= 15V, R
G
= 1,2
, T
vj
= 125C
0,3
s
Anstiegszeit (induktive Last)
I
C
= 1200A, V
CE
= 900V
rise time (inductive load)
V
GE
= 15V, R
G
= 1,2
, T
vj
= 25C
t
r
0,16
s
V
GE
= 15V, R
G
= 1,2
, T
vj
= 125C
0,16
s
Abschaltverzgerungszeit (ind. Last)
I
C
= 1200A, V
CE
= 900V
turn off delay time (inductive load)
V
GE
= 15V, R
G
= 1,2
, T
vj
= 25C
t
d,off
1,1
s
V
GE
= 15V, R
G
= 1,2
, T
vj
= 125C
1,1
s
Fallzeit (induktive Last)
I
C
= 1200A, V
CE
= 900V
fall time (inductive load)
V
GE
= 15V, R
G
= 1,2
, T
vj
= 25C
t
f
0,13
s
V
GE
= 15V, R
G
= 1,2
, T
vj
= 125C
0,14
s
Einschaltverlustenergie pro Puls
I
C
= 1200A, V
CE
= 900V, V
GE
= 15V
turn-on energy loss per pulse
R
G
= 1,2
, T
vj
= 125C, L
S
= 50nH
E
on
330
mWs
Abschaltverlustenergie pro Puls
I
C
= 1200A, V
CE
= 900V, V
GE
= 15V
turn-off energy loss per pulse
R
G
= 1,2
, T
vj
= 125C, L
S
= 50nH
E
off
480
mWs
Kurzschluverhalten
t
P
10sec, V
GE
15V
SC Data
T
Vj
125C, V
CC
=1000V, V
CEmax
=V
CES
-L
sCE
dI/dt
I
SC
4800
A
Modulinduktivitt
stray inductance module
L
sCE
12
nH
Modulleitungswiderstand, Anschlsse - Chip
module lead resistance, terminals - chip
pro Zweig / per arm
R
CC+EE
0,08
m
Charakteristische Werte / Characteristic values
Diode / Diode
min.
typ.
max.
Durchlaspannung
I
F
= 1200A, V
GE
= 0V, T
vj
= 25C
V
F
2,1
2,5
V
forward voltage
I
F
= 1200A, V
GE
= 0V, T
vj
= 125C
1,95
2,3
V
Rckstromspitze
I
F
= 1200A, - di
F
/dt = 7200A/sec
peak reverse recovery current
V
R
= 900V, VGE = -10V, T
vj
= 25C
I
RM
700
A
V
R
= 900V, VGE = -10V, T
vj
= 125C
1000
A
Sperrverzgerungsladung
I
F
= 1200A, - di
F
/dt = 7200A/sec
recovered charge
V
R
= 900V, VGE = -10V, T
vj
= 25C
Q
r
160
As
V
R
= 900V, VGE = -10V, T
vj
= 125C
350
As
Abschaltenergie pro Puls
I
F
= 1200A, - di
F
/dt = 7200A/sec
reverse recovery energy
V
R
= 900V, VGE = -10V, T
vj
= 25C
E
rec
90
mWs
V
R
= 900V, VGE = -10V, T
vj
= 125C
180
mWs
FZ 1200 R 17 KF6 B2
2(8)
FZ1200R17KF6B2
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 17 KF6 B2
Thermische Eigenschaften / Thermal properties
min.
typ.
max.
Innerer Wrmewiderstand
Transistor / transistor, DC
R
thJC
0,013
K/W
thermal resistance, junction to case
Diode/Diode, DC
0,025
K/W
bergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Modul / per module
Paste
= 1 W/m*K /
grease
= 1 W/m*K
R
thCK
0,008
K/W
Hchstzulssige Sperrschichttemperatur
maximum junction temperature
T
vj
150
C
Betriebstemperatur
operation temperature
T
op
-40
125
C
Lagertemperatur
storage temperature
T
stg
-40
125
C
Mechanische Eigenschaften / Mechanical properties
Gehuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
AlN
Kriechstrecke
creepage distance
17
mm
Luftstrecke
clearance
10
mm
CTI
comperative tracking index
275
Anzugsdrehmoment f. mech. Befestigung
M1
5
Nm
mounting torque
Anzugsdrehmoment f. elektr. Anschlsse
terminals M4
M2
2
Nm
terminal connection torque
terminals M8
8 - 10
Nm
Gewicht
weight
G
1050
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehrigen Technischen Erluterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
3(8)
FZ1200R17KF6B2
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 17 KF6 B2
I
C
[A]
V
CE
[V]
I
C
[A]
V
CE
[V]
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
Tj = 25C
Tj = 125C
Ausgangskennlinie (typisch) I
C
= f (V
CE
)
Output characteristic (typical)
V
GE
= 15V
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
VGE = 8V
Ausgangskennlinienfeld (typisch) I
C
= f (V
CE
)
Output characteristic (typical)
T
vj
= 125C
4(8)
FZ1200R17KF6B2
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 17 KF6 B2
I
C
[A]
V
GE
[V]
I
F
[A]
V
F
[V]
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
5
6
7
8
9
10
11
12
13
Tj = 25C
Tj = 125C
bertragungscharakteristik (typisch) I
C
= f (V
GE
)
Transfer characteristic (typical)
V
CE
= 20V
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
0,0
0,5
1,0
1,5
2,0
2,5
3,0
Tj = 125C
Tj = 25C
Durchlakennlinie der Inversdiode (typisch) I
F
= f (V
F
)
Forward characteristic of inverse diode (typical)
5(8)
FZ1200R17KF6B2
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 17 KF6 B2
E [
m
J]
I
C
[A]
E [
m
J]
R
G
[
]
0
200
400
600
800
1000
1200
0
500
1000
1500
2000
2500
Eoff
Eon
Erec
Schaltverluste (typisch) E
on
= f (I
C
) , E
off
= f (I
C
) , E
rec
= f (I
C
)
Switching losses (typical)
R
gon
= R
goff
=1,2
, V
CE
= 900V, T
j
= 125C, V
GE
= 15V
0
200
400
600
800
1000
1200
1400
0
2
4
6
8
10
Eoff
Eon
Erec
Schaltverluste (typisch) E
on
= f (R
G
) , E
off
= f (R
G
) , E
rec
= f (R
G
)
Switching losses (typical)
I
C
= 1200A , V
CE
= 900V , T
j
= 125C, V
GE
= 15V
6(8)
FZ1200R17KF6B2
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 17 KF6 B2
Z
thJ
C
[
K
/ W
]
t [sec]
i
1
2
3
4
r
i
[K/kW]
: IGBT
1,25
6,15
2,6
3
i
[sec]
: IGBT
0,003
0,05
0,1
0,95
r
i
[K/kW]
: Diode
2,46
13,4
4,57
4,57
i
[sec]
: Diode
0,003
0,045
0,45
0,75
I
C
[A]
V
CE
[V]
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
R
g
= 1,2 Ohm, T
vj
= 125C
Transienter Wrmewiderstand Z
thJC
= f (t)
Transient thermal impedance
0
500
1000
1500
2000
2500
3000
0
200
400
600
800
1000
1200
1400
1600
1800
IC,Modul
IC,Chip
0,001
0,01
0,1
0,001
0,01
0,1
1
10
100
Zth:Diode
Zth:IGBT
Seite/page 7 (8)
FZ1200R17KF6B2
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 17 KF6 B2
uere Abmessungen / external dimensions
8(8)
FZ1200R17KF6B2
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