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Электронный компонент: FZ200R65KF1

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 200 R 65 KF1
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
T
vj
=125C
T
vj
=25C
T
vj
=-40C
V
CES
6500
6300
5800
V
Kollektor-Dauergleichstrom
T
C
= 80 C
I
C,nom.
200
A
DC-collector current
T
C
= 25 C
I
C
400
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
= 80C
I
CRM
400
A
Gesamt-Verlustleistung
total power dissipation
T
C
=25C, Transistor
P
tot
3,8
kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Dauergleichstrom
DC forward current
I
F
200
A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1 ms
I
FRM
400
A
Grenzlastintegral der Diode
I
2
t - value, Diode
V
R
= 0V, t
p
= 10ms, T
Vj
= 125C
I
2
t
26
k A
2
s
Isolations-Prfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
V
ISOL
10,2
kV
Teilentladungs Aussetzspannung
partial discharge extinction voltage
RMS, f = 50 Hz, Q
PD
typ. 10pC (acc. To IEC 1287)
V
ISOL
5,1
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
I
C
= 200A, V
GE
= 15V, T
vj
= 25C
V
CE sat
-
4,3
4,9
V
collector-emitter saturation voltage
I
C
= 200A, V
GE
= 15V, T
vj
= 125C
-
5,3
5,9
V
Gate-Schwellenspannung
gate threshold voltage
I
C
= 35mA, V
CE
= V
GE
, T
vj
= 25C
V
GE(th)
6,4
7,0
8,1
V
Gateladung
gate charge
V
GE
= -15V ... +15V
Q
G
-
2,8
-
C
Eingangskapazitt
input capacitance
f = 1MHz,T
vj
= 25C,V
CE
= 25V, V
GE
= 0V
C
ies
-
28
-
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V
CE
= 6300V, V
GE
= 0V, T
vj
= 25C
V
CE
= 6500V, V
GE
= 0V, T
vj
= 125C
I
CES
-
0,2
20
-
mA
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25C
I
GES
-
-
400
nA
prepared by: Dr. Oliver Schilling
date of publication: 2002-07-05
approved by: Dr. Schtze 2002-07-05
revision/Status: Series 1
1
FZ 200 R65 KF1 (final 1).xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 200 R 65 KF1
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Einschaltverzgerungszeit (ind. Last)
I
C
= 200A, V
CE
= 3600V
turn on delay time (inductive load)
V
GE
= 15V, R
Gon
= 13
, C
GE
=22nF, T
vj
= 25C,
t
d,on
-
0,75
-
s
V
GE
= 15V, R
Gon
= 13
, C
GE
=22nF, T
vj
= 125C,
-
0,72
-
s
Anstiegszeit (induktive Last)
I
C
= 200A, V
CE
= 3600V
rise time (inductive load)
V
GE
= 15V, R
Gon
= 13
, C
GE
=22nF, T
vj
= 25C,
t
r
-
0,37
-
s
V
GE
= 15V, R
Gon
= 13
, C
GE
=22nF, T
vj
= 125C,
-
0,40
-
s
Abschaltverzgerungszeit (ind. Last)
I
C
= 200A, V
CE
= 3600V
turn off delay time (inductive load)
V
GE
= 15V, R
Goff
= 75
, C
GE
=22nF, T
vj
= 25C,
t
d,off
-
5,50
-
s
V
GE
= 15V, R
Goff
= 75
, C
GE
=22nF, T
vj
= 125C,
-
6,00
-
s
Fallzeit (induktive Last)
I
C
= 200A, V
CE
= 3600V
fall time (inductive load)
V
GE
= 15V, R
Goff
= 75
, C
GE
=22nF, T
vj
= 25C,
t
f
-
0,40
-
s
V
GE
= 15V, R
Goff
= 75
, C
GE
=22nF, T
vj
= 125C,
-
0,50
-
s
Einschaltverlustenergie pro Puls
I
C
= 200A, V
CE
= 3600V, V
GE
= 15V
turn-on energy loss per pulse
R
Gon
= 13
, C
GE
=22nF, T
vj
= 125C , L
= 280nH
E
on
-
1900
-
mJ
Abschaltverlustenergie pro Puls
I
C
= 200A, V
CE
= 3600V, V
GE
= 15V
turn-off energy loss per pulse
R
Goff
= 75
, C
GE
=22nF, T
vj
= 125C , L
= 280nH
E
off
-
1200
-
mJ
Kurzschluverhalten
t
P
10sec, V
GE
15V, acc to appl.note 2002/05
SC Data
T
Vj
125C, V
CC
=4400V, V
CEmax
=V
CES
-L
CE
di/dt
I
SC
-
1000
-
A
Modulinduktivitt
stray inductance module
L
sCE
-
25
-
nH
Modulleitungswiderstand, Anschlsse - Chip
module lead resistance, terminals - chip
R
CC+EE
-
0,37
-
m
Diode / Diode
min.
typ.
max.
Durchlaspannung
I
F
= 200A, V
GE
= 0V, T
vj
= 25C
V
F
3,0
3,8
4,6
V
forward voltage
I
F
= 200A, V
GE
= 0V, T
vj
= 125C
3,9
4,7
V
Rckstromspitze
I
F
= 200A, - di
F
/dt = 700A/s
peak reverse recovery current
V
R
= 3600V, V
GE
= -10V, T
vj
= 25C
I
RM
-
270
-
A
V
R
= 3600V, V
GE
= -10V, T
vj
= 125C
-
330
-
A
Sperrverzgerungsladung
I
F
= 200A, - di
F
/dt = 700A/s
recovered charge
V
R
= 3600V, V
GE
= -10V, T
vj
= 25C
Q
r
-
180
-
C
V
R
= 3600V, V
GE
= -10V, T
vj
= 125C
-
350
-
C
Abschaltenergie pro Puls
I
F
= 200A, - di
F
/dt = 700A/s
reverse recovery energy
V
R
= 3600V, V
GE
= -10V, T
vj
= 25C
E
rec
-
220
-
mJ
V
R
= 3600V, V
GE
= -10V, T
vj
= 125C
-
550
-
mJ
2
FZ 200 R65 KF1 (final 1).xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 200 R 65 KF1
Thermische Eigenschaften / Thermal properties
min.
typ.
max.
Innerer Wrmewiderstand
Transistor / transistor, DC
R
thJC
-
-
0,033
K/W
thermal resistance, junction to case
Diode/Diode, DC
-
-
0,063
K/W
bergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Modul / per Module
Paste
1 W/m*K /
grease
1 W/m*K
R
thCK
-
0,016
-
K/W
Hchstzulssige Sperrschichttemperatur
maximum junction temperature
T
vj, max
-
-
150
C
Betriebstemperatur Sperrschicht
junction operation temperature
Schaltvorgnge IGBT(RBSOA);Diode(SOA)
switching operation IGBT(RBSOA);Diode(SOA)
T
vj,op
-40
-
125
C
Lagertemperatur
storage temperature
T
stg
-40
-
125
C
Mechanische Eigenschaften / Mechanical properties
Gehuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
AlN
Kriechstrecke
creepage distance
56
mm
Luftstrecke
clearance
26
mm
CTI
comperative tracking index
>600
Anzugsdrehmoment f. mech. Befestigung
Schraube /screw M6
M
5
Nm
mounting torque
Anzugsdrehmoment f. elektr. Anschlsse
terminal connection torque
Anschlsse / terminals M8
M
8 - 10
Nm
Gewicht
weight
G
500
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehrigen Technischen Erluterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
3
FZ 200 R65 KF1 (final 1).xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 200 R 65 KF1
I
C
[A
]
V
CE
[V]
I
C
[A
]
V
CE
[V]
0
50
100
150
200
250
300
350
400
450
0,0
1,0
2,0
3,0
4,0
5,0
6,0
7,0
8,0
9,0
10,0
25C
125C
Ausgangskennlinie (typisch) I
C
= f (V
CE
)
Output characteristic (typical)
V
GE
= 15V
0
50
100
150
200
250
300
350
400
450
0,0
1,0
2,0
3,0
4,0
5,0
6,0
7,0
8,0
9,0
10,0
20V
15V
12V
10V
Ausgangskennlinienfeld (typisch) I
C
= f (V
CE
), V
GE
= < see inset >
Output characteristic (typical)
T
vj
= 125C
4
FZ 200 R65 KF1 (final 1).xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 200 R 65 KF1
I
C
[A
]
V
GE
[V]
I
F
[A
]
V
F
[V]
0
50
100
150
200
250
300
350
400
450
5
6
7
8
9
10
11
12
13
14
15
25C
125C
bertragungscharakteristik (typisch) I
C
= f (V
GE
)
Transfer characteristic (typical)
V
CE
= 10V
0
50
100
150
200
250
300
350
400
450
0,0
1,0
2,0
3,0
4,0
5,0
6,0
7,0
25C
125C
Durchlakennlinie der Inversdiode (typisch) I
F
= f (V
F
)
Forward characteristic of inverse diode (typical)
5
FZ 200 R65 KF1 (final 1).xls