Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ2400R17KF6C B2
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
1700 V
Kollektor-Dauergleichstrom
T
C
= 80 C I
C,nom.
2400 A
DC-collector current
T
C
= 25 C I
C
3800 A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
= 80C I
CRM
4800 A
Gesamt-Verlustleistung
total power dissipation
T
C
=25C, Transistor P
tot
19,2 kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V V
Dauergleichstrom
DC forward current
I
F
2400 A
Periodischer Spitzenstrom
repetitive peak forw. current
tp = 1 ms I
FRM
4800 A
Grenzlastintegral der Diode
I
2
t - value, Diode
V
R
= 0V, t
p
= 10ms, T
Vj
= 125C
I
2
t 1500 kA
2
s
Isolations-Prfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min. V
ISOL
4
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
min. typ. max.
Kollektor-Emitter Sttigungsspannung
I
C
= 2400A, V
GE
= 15V, T
vj
= 25C
V
CE sat
2,6 3,1 V
collector-emitter saturation voltage
I
C
= 2400A, V
GE
= 15V, T
vj
= 125C
3,1 3,6 V
Gate-Schwellenspannung
gate threshold voltage
I
C
= 190mA, V
CE
= V
GE
, T
vj
= 25C V
GE(th)
4,5 5,5 6,5 V
Gateladung
gate charge
V
GE
= -15V ... +15V Q
G
29 C
Eingangskapazitt
input capacitance
f = 1MHz,T
vj
= 25C,V
CE
= 25V, V
GE
= 0V C
ies
160 nF
Rckwirkungskapazitt
reverse transfer capacitance
f = 1MHz,T
vj
= 25C,V
CE
= 25V, V
GE
= 0V C
res
8
nF
Kollektor-Emitter Reststrom
V
CE
= 1700V, V
GE
= 0V, T
vj
= 25C
I
CES
0,06 4,5 mA
collector-emitter cut-off current
V
CE
= 1700V, V
GE
= 0V, T
vj
= 125C
30 240 mA
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25C
I
GES
400 nA
prepared by: Alfons Wiesenthal date of publication: 10.11.2000
approved by: Christoph Lbke; 10.11.2000 revision: serie
1(8)
FZ2400R17KF6C B2
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
Charakteristische Werte / Characteristic values
Transistor / Transistor
min. typ. max.
Einschaltverzgerungszeit (ind. Last)
I
C
= 2400, V
CE
= 900V
turn on delay time (inductive load)
V
GE
= 15V, R
G
= 0,6
, T
vj
= 25C t
d,on
0,3 s
V
GE
= 15V, R
G
= 0,6
, T
vj
= 125C 0,3 s
Anstiegszeit (induktive Last)
I
C
= 2400, V
CE
= 900V
rise time (inductive load)
V
GE
= 15V, R
G
= 0,6
, T
vj
= 25C t
r
0,23 s
V
GE
= 15V, R
G
= 0,6
, T
vj
= 125C 0,23 s
Abschaltverzgerungszeit (ind. Last)
I
C
= 2400, V
CE
= 900V
turn off delay time (inductive load)
V
GE
= 15V, R
G
= 0,6
, T
vj
= 25C t
d,off
1,5 s
V
GE
= 15V, R
G
= 0,6
, T
vj
= 125C 1,5 s
Fallzeit (induktive Last)
I
C
= 2400, V
CE
= 900V
fall time (inductive load)
V
GE
= 15V, R
G
= 0,6
, T
vj
= 25C t
f
0,18 s
V
GE
= 15V, R
G
= 0,6
, T
vj
= 125C 0,19 s
Einschaltverlustenergie pro Puls
I
C
= 2400A, V
CE
= 900V, V
GE
= 15V
turn-on energy loss per pulse
R
G
= 0,6
, T
vj
= 125C, L
S
= 50nH E
on
750 mWs
Abschaltverlustenergie pro Puls
I
C
= 2400A, V
CE
= 900V, V
GE
= 15V
turn-off energy loss per pulse
R
G
= 0,6
, T
vj
= 125C, L
S
= 50nH E
off
1060 mWs
Kurzschluverhalten
t
P
10sec, V
GE
15V
SC Data
T
Vj
125C, V
CC
=1000V, V
CEmax
=V
CES
-L
sCE
dI/dt I
SC
9600 A
Modulinduktivitt
stray inductance module
L
sCE
10 nH
Modulleitungswiderstand, Anschlsse - Chip
module lead resistance, terminals - chip
pro Zweig / per arm R
CC+EE
0,06 m
Charakteristische Werte / Characteristic values
Diode / Diode
min. typ. max.
Durchlaspannung
I
F
= 2400A, V
GE
= 0V, T
vj
= 25C V
F
2,1 2,5 V
forward voltage
I
F
= 2400A, V
GE
= 0V, T
vj
= 125C 2,1 2,5 V
Rckstromspitze
I
F
= 2400A, - di
F
/dt = 11000A/sec
peak reverse recovery current
V
R
= 900V, VGE = -10V, T
vj
= 25C I
RM
1750 A
V
R
= 900V, VGE = -10V, T
vj
= 125C 2200 A
Sperrverzgerungsladung
I
F
= 2400A, - di
F
/dt = 11000A/sec
recovered charge
V
R
= 900V, VGE = -10V, T
vj
= 25C Q
r
530 As
V
R
= 900V, VGE = -10V, T
vj
= 125C 960 As
Abschaltenergie pro Puls
I
F
= 2400A, - di
F
/dt =11000A/sec
reverse recovery energy
V
R
= 900V, VGE = -10V, T
vj
= 25C E
rec
320 mWs
V
R
= 900V, VGE = -10V, T
vj
= 125C 600 mWs
FZ2400R17KF6C B2
2(8)
FZ2400R17KF6C B2
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ2400R17KF6C B2
Thermische Eigenschaften / Thermal properties
min. typ. max.
Innerer Wrmewiderstand
Transistor / transistor, DC R
thJC
0,007 K/W
thermal resistance, junction to case
Diode/Diode, DC 0,012 K/W
bergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Modul / per module
Paste
= 1 W/m*K /
grease
= 1 W/m*K
R
thCK
0,006 K/W
Hchstzulssige Sperrschichttemperatur
maximum junction temperature
T
vj
150 C
Betriebstemperatur
operation temperature
T
op
-40 125 C
Lagertemperatur
storage temperature
T
stg
-40 125 C
Mechanische Eigenschaften / Mechanical properties
Gehuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
AlN
Kriechstrecke
creepage distance
32 mm
Luftstrecke
clearance
20 mm
CTI
comperative tracking index
min. >400
Anzugsdrehmoment f. mech. Befestigung
M1 5 Nm
mounting torque
Anzugsdrehmoment f. elektr. Anschlsse
terminals M4 M2 2 Nm
terminal connection torque
terminals M8 8 - 10 Nm
Gewicht
weight
G 1500 g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehrigen Technischen Erluterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
3(8)
FZ2400R17KF6C B2
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ2400R17KF6C B2
I
C
[A]
V
CE
[V]
I
C
[A]
V
CE
[V]
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
Tj = 25C
Tj = 125C
Ausgangskennlinie (typisch) I
C
= f (V
CE
)
Output characteristic (typical)
V
GE
= 15V
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
VGE = 8V
Ausgangskennlinienfeld (typisch) I
C
= f (V
CE
)
Output characteristic (typical)
T
vj
= 125C
4(8)
FZ2400R17KF6C B2
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ2400R17KF6C B2
I
C
[A]
V
GE
[V]
I
F
[A]
V
F
[V]
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5
6
7
8
9
10
11
12
13
Tj = 25C
Tj = 125C
bertragungscharakteristik (typisch) I
C
= f (V
GE
)
Transfer characteristic (typical)
V
CE
= 20V
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0,0 0,5 1,0 1,5 2,0 2,5 3,0
Tj = 25C
Tj = 125C
Durchlakennlinie der Inversdiode (typisch) I
F
= f (v
F
)
Forward characteristic of inverse diode (typical)
5(8)
FZ2400R17KF6C B2
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