Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 800 R 33 KF2
vorlufiges Datenblatt
preliminary data sheet
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
T
j
= 25C
V
CES
3300
V
collector-emitter voltage
T
j
= -25C
3300
Kollektor-Dauergleichstrom
T
C
= 80C
I
C,nom.
800
A
DC-collector current
T
C
= 25 C
I
C
1300
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
= 80C
I
CRM
1600
A
Gesamt-Verlustleistung
total power dissipation
T
C
=25C, Transistor
P
tot
9,6
kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Dauergleichstrom
DC forward current
I
F
800
A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1 ms
I
FRM
1600
A
Grenzlastintegral der Diode
I
2
t - value, Diode
V
R
= 0V, t
p
= 10ms, T
Vj
= 125C
I
2
t
A
2
s
Spitzenverlustleistung der Diode
maximum power dissipation diode
T
j
= 125C
P
RQM
800
kW
Isolations-Prfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
V
ISOL
6.000
V
Teilentladungs-Aussetzspannung
partial discharge extinction voltage
RMS, f = 50 Hz, Q
PD
10 pC (acc. to IEC 1287)
V
ISOL
2.600
V
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
I
C
= 800A, V
GE
= 15V, Tvj = 25C
V
CE sat
-
3,40
4,25
V
collector-emitter saturation voltage
I
C
= 800A, V
GE
= 15V, T
vj
= 125C
-
4,30
-
V
Gate-Schwellenspannung
gate threshold voltage
I
C
= 80 mA, V
CE
= V
GE
, T
vj
= 25C
V
GE(th)
4,2
5,1
6,0
V
Eingangskapazitt
input capacitance
f = 1MHz,T
vj
= 25C,V
CE
= 25V, V
GE
= 0V
C
ies
-
100
-
nF
Rckwirkungskapazitt
reverse transfer capacitance
f = 1MHz,T
vj
= 25C,V
CE
= 25V, V
GE
= 0V
C
res
-
5,4
-
nF
Gateladung
gate charge
V
GE
= -15V ... + 15V, V
CE
= 1800V
Q
G
-
15
-
C
Kollektor-Emitter Reststrom
V
CE
= 3300V, V
GE
= 0V, T
vj
= 25C
I
CES
-
20
-
A
collector-emitter cut-off current
V
CE
= 3300V, V
GE
= 0V, T
vj
= 125C
-
40
-
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25C
I
GES
-
-
400
nA
prepared by: Jrgen Gttert
date of publication : 22.12.98
approved by:H. Ludwig ; 27.01.99
revision: 2
222.200
1 (9)
DB_FZ800R33KF2_V3.xls
28.01.99
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 800 R 33 KF2
vorlufiges Datenblatt
preliminary data sheet
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Einschaltverzgerungszeit (ind. Last)
I
C
= 800 A, V
CC
= 1800V
turn on delay time (inductive load)
V
GE
= 15V, R
G
= 1,8
, C
GE
= 150nF, T
vj
= 25C
t
d,on
-
370
-
ns
V
GE
= 15V, R
G
= 1,8
, C
GE
= 150nF, T
vj
= 125C
-
350
-
ns
Anstiegszeit (induktive Last)
I
C
= 800 A, V
CC
= 1800V
rise time (inductive load)
V
GE
= 15V, R
G
= 1,8
, C
GE
= 150nF, T
vj
= 25C
t
r
-
250
-
ns
V
GE
= 15V, R
G
= 1,8
, C
GE
= 150nF, T
vj
= 125C
-
270
-
ns
Abschaltverzgerungszeit (ind. Last)
I
C
= 800 A, V
CC
= 1800V
turn off delay time (inductive load)
V
GE
= 15V, R
G
= 1,8
, C
GE
= 150nF, T
vj
= 25C
t
d,off
-
1550
-
ns
V
GE
= 15V, R
G
= 1,8
, C
GE
= 150nF, T
vj
= 125C
-
1700
-
ns
Fallzeit (induktive Last)
I
C
= 800 A, V
CC
= 1800V
fall time (inductive load)
V
GE
= 15V, R
G
= 1,8
, C
GE
= 150nF, T
vj
= 25C
t
f
-
200
-
ns
V
GE
= 15V, R
G
= 1,8
, C
GE
= 150nF, T
vj
= 125C
-
200
-
ns
Einschaltverlustenergie pro Puls
I
C
= 800 A, V
CC
= 1800V, V
GE
= 15V
turn-on energy loss per pulse
R
G
= 1,8
, C
GE
= 150, nF, T
vj
= 125C, L
S
= 40nH
E
on
-
1920
-
mWs
Abschaltverlustenergie pro Puls
I
C
= 800 A, V
CC
= 1800V, V
GE
= 15V
turn-off energy loss per pulse
R
G
= 1,8
, C
GE
= 150, nF, T
vj
= 125C, L
S
= 40nH
E
off
-
1020
-
mWs
Kurzschluverhalten
t
P
10sec, V
GE
15V
SC Data
T
Vj
125C, V
CC
=2500V, V
CEmax
=V
CES
-L
sCE
dI/dt
I
SC
-
4000
-
A
Modulinduktivitt
stray inductance module
L
sCE
-
12
-
nH
Modul-Leitungswiderstand, Anschlsse - Chip
lead resistance, terminals - chip
T = 25C
R
CC'+EE'
-
0,19
-
m
Charakteristische Werte / Characteristic values
Diode / Diode
min.
typ.
max.
Durchlaspannung
I
F
= 800 A, V
GE
= 0V, T
vj
= 25C
V
F
-
2,80
3,50
V
forward voltage
I
F
= 800 A, V
GE
= 0V, T
vj
= 125C
-
2,80
-
V
Rckstromspitze
I
F
= 800 A, - di
F
/dt = 2500 A/sec
peak reverse recovery current
V
R
= 1800V, VGE = -10V, T
vj
= 25C
I
RM
-
650
-
A
V
R
= 1800V, VGE = -10V, T
vj
= 125C
-
700
-
A
Sperrverzgerungsladung
I
F
= 800 A, - di
F
/dt = 2500 A/sec
recovered charge
V
R
= 1800V, VGE = -10V, T
vj
= 25C
Q
r
-
500
-
As
V
R
= 1800V, VGE = -10V, T
vj
= 125C
-
900
-
As
Abschaltenergie pro Puls
I
F
= 800 A, - di
F
/dt = 2500 A/sec
reverse recovery energy
V
R
= 1800V, VGE = -10V, T
vj
= 25C
E
rec
-
490
-
mWs
V
R
= 1800V, VGE = -10V, T
vj
= 125C
-
1000
-
mWs
2 (9)
DB_FZ800R33KF2_V3.xls
28.01.99
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 800 R 33 KF2
vorlufiges Datenblatt
preliminary data sheet
Thermische Eigenschaften / Thermal properties
min.
typ.
max.
Innerer Wrmewiderstand
Transistor / transistor, DC
R
thJC
-
-
0,013
K/W
thermal resistance, junction to case
Diode/Diode, DC
-
-
0,026
K/W
bergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Modul / per module
Paste
= 1 W/m*K /
grease
= 1 W/m*K
R
thCK
-
0,006
-
K/W
Hchstzulssige Sperrschichttemperatur
maximum junction temperature
T
vj
-
-
150
C
Betriebstemperatur
operation temperature
T
op
-40
-
125
C
Lagertemperatur
storage temperature
T
stg
-40
-
125
C
Mechanische Eigenschaften / Mechanical properties
Gehuse, siehe Anlage
case, see appendix
Material Modulgrundplatte
material of module baseplate
AlSiC
Innere Isolation
internal insulation
AlN
Kriechstrecke
creepage distance
32,2
mm
Luftstrecke
clearance
19,1
mm
CTI
comperative tracking index
> 400
Anzugsdrehmoment f. mech. Befestigung
M1
5
Nm
mounting torque
Anzugsdrehmoment f. elektr. Anschlsse
terminals M4
M2
2
Nm
terminal connection torque
terminals M8
8 .. 10
Nm
Gewicht
weight
G
1000
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehrigen Technischen Erluterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
3 (9)
DB_FZ800R33KF2_V3.xls
28.01.99
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 800 R 33 KF2
vorlufiges Datenblatt
preliminary data sheet
I
C
[A]
V
CE
[V]
I
C
[A]
V
CE
[V]
0
200
400
600
800
1000
1200
1400
1600
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
5,5
6,0
6,5
7,0
T = 25C
T = 125C
Ausgangskennlinie (typisch) I
C
= f (V
CE
)
Output characteristic (typical)
V
GE
= 15V
0
200
400
600
800
1000
1200
1400
1600
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
5,5
6,0
6,5
7,0
VGE = 8V
VGE = 9V
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
Ausgangskennlinienfeld (typisch) I
C
= f (V
CE
)
Output characteristic (typical)
T
vj
= 125C
4 (9)
DB_FZ800R33KF2_V3.xls
28.01.99
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 800 R 33 KF2
vorlufiges Datenblatt
preliminary data sheet
I
C
[A]
V
GE
[V]
I
F
[A]
V
F
[V]
0
200
400
600
800
1000
1200
1400
1600
5
6
7
8
9
10
11
12
13
T = 25C
T = 125C
bertragungscharakteristik (typisch) I
C
= f (V
GE
)
Transfer characteristic (typical)
V
CE
= 20V
0
200
400
600
800
1000
1200
1400
1600
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
Tj = 25C
Tj = 125C
Durchlakennlinie der Inversdiode (typisch) I
F
= f (V
F
)
Forward characteristic of inverse diode (typical)
5 (9)
DB_FZ800R33KF2_V3.xls
28.01.99
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