T 699 N
Elektrische Eigenschaften
Electrical properties
Hchstzulssige Werte
Maximum rated values
Periodische Vorwrts- und Rckwrts-
Spitzensperrspannung
repetitive peak forward off-state and
reverse voltages
t
vj
= -40C...t
vj max
V
DRM
, V
RRM
1800 2000 2200
V
Vorwrts-Stospitzensperrspannung
non-repetitive peak forward off-state
voltage
t
vj
= -40C...t
vj max
V
DSM
= V
DRM
1800 2000 2200
V
Rckwrts-Stospitzensperrspannung
non-repetitive peak reverse voltage
t
vj
= +25C...t
vj max
V
RSM
= V
RRM
1900 2100 2300
V
Durchlastrom-Grenzeffektivwert
RMS on-state current
I
TRMSM
1500
A
Dauergrenzstrom
average on-state current
t
c
= 85C
I
TAVM
699
A
t
c
= 64C
950
A
Stostrom-Grenzwert
surge current
t
vj
= 25C, t
p
= 10 ms
I
TSM
13500
A
t
vj
= t
vj max
, t
p
= 10 ms
12200
A
Grenzlastintegral
I
2
t-value
t
vj
= 25C, t
p
= 10 ms
I
2
t
911000
A
2
s
t
vj
= t
vj max
, t
p
= 10 ms
744000
A
2
s
Kritische Stromsteilheit
critical rate of rise of on-state current
DIN IEC 747-6, f = 50 Hz
(di
T
/dt)
cr
200
A/s
i
GM
= 1 A, di
G
/dt = 1 A/s
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
t
vj
= t
vj max
, v
D
= 0,67 V
DRM
(dv
D
/dt)
cr
1000
V/s
5.Kennbuchstabe/5th letter F
Charakteristische Werte
Characteristic values
Durchlaspannung
on-state voltage
t
vj
= t
vj max
, i
T
= 2850 A
v
T
max. 2,32
V
Schleusenspannung
threshold voltage
t
vj
= t
vj max
V
T(TO)
0,95
V
Ersatzwiderstand
slope resistance
t
vj
= t
vj max
r
T
0,45
m
Zndstrom
gate trigger current
t
vj
= 25 C, v
D
= 6 V
I
GT
max. 250
mA
Zndspannung
gate trigger voltage
t
vj
= 25 C, v
D
= 6 V
V
GT
max. 2,2
V
Nicht zndender Steuerstrom
gate non-trigger current
t
vj
= t
vj max
, v
D
= 6 V
I
GD
max. 10
mA
t
vj
= t
vj max
, v
D
= 0,5 V
DRM
max. 5
mA
Nicht zndende Steuerspannung
gate non-trigger voltage
t
vj
= t
vj max
, v
D
= 0,5 V
DRM
V
GD
max. 0,25
V
Haltestrom
holding current
t
vj
= 25 C, v
D
= 6 V, R
A
= 5
I
H
max. 300
mA
Einraststrom
latching current
t
vj
= 25 C,v
D
= 6 V, R
GK
>
10
I
L
max. 1500
mA
i
GM
= 1 A, di
G
/dt = 1 A/s, t
g
= 20 s
Vorwrts- und Rckwrts-Sperrstrom
forward off-state and reverse currents
t
vj
= t
vj max,
v
D
= V
DRM
, v
R
= V
RRM
i
D
, i
R
max. 100
mA
Zndverzug
gate controlled delay time
DIN IEC 747-6 t
vj
=25C, i
GM
= 1 A, di
G
/dt
= 1 A/s
t
gd
max. 4,0
s
Freiwerdezeit
circuit commutated turn-off time
t
vj
=t
vj max
, i
TM
=i
TAVM
, v
RM
=100V, v
DM
=0,67
V
DRM
, dv
D
/dt=20V/s, -
di
T
/dt=10A/s
t
q
typ. 300
s
4.Kennbuchstabe/4th letter O
Thermische Eigenschaften
Thermal properties
Innerer Wrmewiderstand, beidseitig
thermal resistance, junction to case for
two-sided cooling
=180 el, sin
R
thJC
max. 0,0320 C/W
DC
max. 0,0300 C/W
fr anodenseitige Khlung
for anode-sided cooling
=180 el, sin
R
thJC(A)
max. 0,0537 C/W
DC
max. 0,0511 C/W
fr kathodenseitige Khlung
for cathode-sided cooling
=180 el, sin
R
thJC(K)
max. 0,0816 C/W
DC
max. 0,0732 C/W
bergangs-Wrmewiderstand
thermal resistance, case to heatsink
beidseitig/two-sided
R
thCK
max. 0,005 C/W
einseitig/one-sided
max. 0,010 C/W
Hchstzul.Sperrschichttemperatur
max. junction temperature
t
vj max
125
C
Betriebstemperatur
operating temperature
t
c op
-40...+125
C
Lagertemperatur
storage temperature
t
stg
-40...+140
C
Mechanische Eigenschaften
Mechanical properties
Si-Elemente mit Druckkontakt, Amplifying-
Gate
Si-pellet with pressure contact,amplifying
gate
Anprekraft
clamping force
F
10,5...21
kN
Gewicht
weight
G
typ. 280
g
Kriechstrecke
creepage distance
25
mm
Feuchteklasse
humidity classification
DIN 40040
C
Schwingfestigkeit
vibration resistance
f = 50 Hz
50
m/s
Mabild, anliegend
outline, attached
4000
3500
2500
2000
1500
1000
500
0
1
1,5
2
2,5
3
0,5
v
T
[V]
i
T
[A]
T 699 N
Bild / Fig. 1
Grenzdurchlakennlinie / Limiting on-state characteristic
i
T
= f(v
T
), t
vj
= 125C
T 699 N / 1
Analytische Elemente des transienten Wrmewiderstandes Z
thJC
pro Zweig fr DC
Analytical elements of transient thermal impedance Z
thJC
per arm for DC
Analytische Funktion / Analytical function:
n
max
n=1
Z
thJC
= R
thn
(1-e )
t
-
n
Pos. n
R
thn
[C/W]
n
[s]
Kathodenseitig / Cathode-sided
Pos. n
R
thn
[C/W]
n
[s]
Anodenseitig / Anode-sided
Pos. n
R
thn
[C/W]
n
[s]
Beidseitig / Two-sided
1
2
3
4
5
1
2
3
4
5
1
2
3
4
5
0,000134
0,001636
0,00195
0,00968
0,01680
0,000183
0,00166
0,00937
0,119
0,939
0,000455
0,003885
0,00331
0,0138
0,02965
0,000251
0,00243
0,0544
0,183
1,14
0,000708
0,007242
0,0137
0,02665
0,0249
0,00032
0,00387
0,0232
0,138
0,9
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