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5DG
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Excelics
EFA060B-100F
DATA SHEET
Low Distortion GaAs Power FET
HERMETIC 100mil CERAMIC FLANGE PACKAGE
+25.0dBm TYPICAL OUTPUT POWER
8.0dB TYPICAL POWER GAIN AT 12GHz
0.3 X 600 MICRON RECESSED "MUSHROOM"
GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS PARAMETERS/TEST
CONDITIONS MIN
TYP
MAX
UNIT
P
1dB
Output Power at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss
23.0 25.0
dBm
G
1dB
Gain at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss
6.5 8.0
dB
PAE
Power Added Efficiency at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss
33
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
100
170
240
mA
Gm
Transconductance Vds=3V, Vgs=0V
70
90
mS
Vp
Pinch-off Voltage Vds=3V, Ids=1.5mA
-2.0
-3.5
V
BVgd
Drain Breakdown Voltage Igd=1.0mA
-12
-15
V
BVgs
Source Breakdown Voltage Igs=1.0mA
-7
-14
V
Rth
Thermal Resistance
78*
o
C/W
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS PARAMETERS ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
Ids
Drain Current
Idss
190mA
Igsf
Forward Gate Current
15mA
2.5mA
Pin
Input Power
23dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C
150
o
C
Tstg
Storage Temperature
-65/175
o
C
-65/150
o
C
Pt
Total Power Dissipation
1.8 W
1.5 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
All Dimensions In mils
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