Excelics
EFA060B/EFA060BV
DATA SHEET
Low Distortion GaAs Power FET
+25.0dBm TYPICAL OUTPUT POWER
10.5dB TYPICAL POWER GAIN FOR EFA060B AND
12.0dB FOR EFA060BV AT 12GHz
0.3 X 600 MICRON RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
EFA060BV WITH VIA HOLE SOURCE GROUNDING
Idss SORTED IN 10mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS PARAMETERS/TEST CONDITIONS
EFA060B
EFA060BV
UNIT
MIN TYP MAX
MIN
TYP
MAX
P
1dB
Output Power at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
23.0 25.0
25.0
23.0
25.0
25.0
dBm
G
1dB
Gain at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
9.0
10.5
8.0
10.5
12.0
10.0
dB
PAE
Gain at 1dB Compression
Vds=8V, Ids=50% Idss f=12GHz
35
36
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
100
170
240
100
170
240
mA
Gm
Transconductance Vds=3V, Vgs=0V
70
90
70
90
mS
Vp
Pinch-off Voltage Vds=3V, Ids=1.5mA
-2.0
-3.5
-2.0
-3.5
V
BVgd
Drain Breakdown Voltage Igd=1.0mA
-12
-15
-12
-15
V
BVgs
Source Breakdown Voltage Igs=1.0mA
-7
-14
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
75
55
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
EFA060B
EFA060BV
ABSOLUTE
1
CONTINUOUS
2
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
8V
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
-8V
-4V
Ids
Drain
Current
Idss 190mA
Idss Idss
Igsf
Forward Gate Current
15mA
2.5mA
15mA
2.5mA
Pin
Input Power
23dBm
@ 3dB
Compression
23dBm @
3dB
Compression
Tch
Channel Temperature
175
o
C 150
o
C 175
o
C 150
o
C
Tstg
Storage Temperature
-65/175
o
C -65/150
o
C -65/175
o
C -65/150
o
C
Pt
Total
Power
Dissipation
1.8W 1.5W 2.5W 2.1W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Chip Thickness: 75
20 microns
All Dimensions In Microns
: Via Hole
No Via Hole For EFA060B
50
48
100
350
50
95
40
350
D
G
EFA060B/EFA060BV
DATA SHEET
Low Distortion GaAs Power FET
EFA060B
EFA060B EFA060BV
S-PARAMETERS S-PARAMETERS
8V, 1/2 Idss 8V, 1/2 Idss
Note: The data included 0.7 mils diameter Au bonding wires; 1 gate wires, 15 mils each; 1 drain wires, 20 mils each; 4 source wires, 7 mils each;
no source wires for EFA060BV.
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.969 -31.6 7.567 157.9 0.021 71.4 0.580 -14.0
2.0 0.939 -60.4 6.840 139.5 0.038 57.0 0.548 -27.1
3.0 0.900 -85.0 5.997 123.4 0.051 44.0 0.506 -37.2
4.0 0.879 -105.5 5.203 109.8 0.058 33.6 0.470 -45.4
5.0 0.866 -122.6 4.517 98.0 0.062 24.7 0.440 -52.1
6.0 0.859 -135.6 3.933 88.2 0.063 18.4 0.423 -57.8
7.0 0.860 -145.8 3.475 79.9 0.064 12.8 0.412 -62.8
8.0 0.860 -154.1 3.108 72.1 0.065 8.5 0.406 -68.0
9.0 0.861 -160.9 2.812 65.1 0.065 4.3 0.403 -73.3
10.0 0.861 -166.7 2.575 58.7 0.065 0.1 0.406 -78.6
11.0 0.859 -172.2 2.380 52.1 0.065 -3.1 0.408 -84.9
12.0 0.858 -177.9 2.225 45.4 0.065 -6.5 0.414 -91.0
13.0 0.853 176.4 2.083 38.7 0.066 -10.1 0.417 -97.5
14.0 0.846 169.8 1.963 31.6 0.066 -13.8 0.426 -104.1
15.0 0.845 163.0 1.847 24.3 0.067 -18.1 0.435 -110.6
16.0 0.843 156.0 1.724 17.0 0.067 -21.2 0.447 -117.0
17.0 0.844 148.9 1.610 9.6 0.068 -26.2 0.458 -123.4
18.0 0.849 141.9 1.497 2.5 0.066 -29.8 0.470 -129.3
19.0 0.856 135.8 1.384 -4.4 0.065 -33.0 0.483 -135.2
20.0 0.865 131.1 1.278 -10.7 0.065 -35.6 0.498 -140.7
21.0 0.882 130.5 1.175 -15.9 0.063 -38.7 0.518 -149.1
22.0 0.888 128.4 1.091 -21.1 0.062 -39.2 0.542 -155.0
23.0 0.898 127.4 1.016 -25.8 0.060 -40.2 0.565 -160.1
24.0 0.902 126.6 0.953 -30.5 0.059 -39.8 0.589 -165.2
25.0 0.905 126.3 0.911 -34.6 0.058 -40.5 0.613 -169.8
26.0 0.899 124.8 0.860 -39.1 0.058 -40.6 0.640 -172.6
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.981 -31.1 6.867 158.9 0.020 73.0 0.540 -11.0
2.0 0.955 -58.2 6.229 140.5 0.037 60.1 0.500 -22.2
3.0 0.920 -80.1 5.422 125.4 0.048 48.3 0.457 -30.0
4.0 0.889 -97.0 4.722 112.7 0.054 39.5 0.421 -36.6
5.0 0.869 -110.8 4.163 101.8 0.058 33.4 0.396 -42.8
6.0 0.855 -121.8 3.692 92.3 0.060 28.1 0.373 -49.0
7.0 0.843 -130.5 3.322 83.9 0.061 24.4 0.361 -54.9
8.0 0.837 -139.1 3.033 75.6 0.062 19.3 0.352 -61.5
9.0 0.825 -146.9 2.769 67.7 0.062 15.3 0.344 -68.7
10.0 0.818 -153.2 2.566 60.9 0.061 12.0 0.338 -76.0
11.0 0.815 -160.1 2.419 53.4 0.062 9.2 0.336 -84.8
12.0 0.813 -168.3 2.278 45.5 0.062 5.6 0.335 -94.3
13.0 0.819 -175.0 2.135 37.8 0.062 2.3 0.332 -104.7
14.0 0.817 178.5 2.018 30.1 0.063 0.2 0.335 -115.4
15.0 0.816 171.4 1.887 22.1 0.063 -3.2 0.340 -127.6
16.0 0.824 164.7 1.755 13.9 0.063 -6.5 0.353 -139.9
17.0 0.835 160.1 1.619 6.6 0.064 -8.5 0.369 -152.7
18.0 0.847 156.0 1.505 -0.6 0.064 -10.1 0.391 -164.3
19.0 0.854 151.9 1.385 -8.1 0.064 -10.7 0.421 -175.1
20.0 0.856 150.2 1.256 -15.0 0.064 -12.0 0.455 175.1
21.0 0.852 148.9 1.137 -20.4 0.064 -11.5 0.487 166.1
22.0 0.863 149.8 1.040 -25.3 0.064 -10.4 0.522 158.2
23.0 0.871 150.5 0.976 -29.6 0.064 -7.2 0.551 151.6
24.0 0.879 149.1 0.913 -35.4 0.066 -4.5 0.579 145.6
25.0 0.878 147.4 0.862 -40.4 0.069 -1.7 0.604 141.7
26.0 0.876 147.5 0.803 -44.2 0.070 0.7 0.619 136.2
P-1dB & PAE vs, Vds
10
15
20
25
30
4
5
6
7
8
9
10
Drain-Source Voltage (V)
P-1
d
B
(d
Bm
)
20
25
30
35
40
45
50
55
60
PA
E (%
)
f = 12 GHz
Ids = 50% Idss
Pout & PAE vs. Pin
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25
Pin (dBm)
Po
u
t
(
d
Bm
) o
r
Pa
e
(%
)
f = 12 GHz
Vds = 8V, Ids = 50% Idss
PA
E
Pout
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