EFA120B-100F
UPDATED
11/04/2005
Low Distortion GaAs Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2005
ALL DIMENSIONS IN INCHES
DRAIN
GATE
FEATURES
Hermetic 100mil Ceramic Flange Package
+28.0 dBm Typical Output Power
9.0 dB Typical Power Gain at 8GHz
0.3 x 1200 Micron Recessed "Mushroom" Gate
Si
3
N
4
Passivation
Advanced Epitaxial Doping Profile Provides
High Power Efficiency, Linearity and
Reliability
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
Caution! ESD sensitive device.
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
28.0
P
1dB
Output Power at 1dB Compression f = 8GHz
V
DS
= 8 V, I
DS
50% I
DSS
f = 12GHz
26.0
28.0
dBm
9.0
G
1dB
Gain at 1dB Compression f = 8GHz
V
DS
= 8 V, I
DS
50% I
DSS
f = 12GHz
4.0
6.0
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 8 V, I
DS
50% I
DSS
f = 12GHz
30 %
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
200
340
440
mA
G
M
Transconductance
V
DS
= 3 V, V
GS
= 0 V
140
180
mS
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 3 mA
-2.0
-3.5
V
BV
GD
Drain Breakdown Voltage
I
GD
= 1.2 mA
-12
-15
V
BV
GS
Source Breakdown Voltage
I
GS
= 1.2 mA
-7
-14
V
R
TH
Thermal Resistance
43*
o
C/W
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOL PARAMETERS
ABSOLUTE
1
CONTINUOURS
2
V
DS
Drain to Source Voltage
12 V
8 V
V
GS
Gate to Source Voltage
-8 V
-4.0 V
I
DS
Drain Current
Idss
315 mA
I
GSF
Forward Gate Current
30 mA
5 mA
P
IN
Input Power
26 dBm
@ 3dB compression
P
T
Total Power Dissipation
3.2 W
2.7 W
T
CH
Channel
Temperature
175C
150C
T
STG
Storage
Temperature
-65/+175C
-65/+150C
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EFA120B-100F
UPDATED
11/04/2005
Low Distortion GaAs Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2005
S-PARAMETERS
8V, 1/2 Idss
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.960
-62.2
7.670 137.4
0.028 52.9 0.458
-46.5
2.0 0.884
-102.4
5.782 106.2
0.038 34.8 0.397
-69.5
3.0 0.841
-126.9
4.474
83.8 0.043 27.0 0.375
-85.2
4.0 0.812
-148.4
3.697
64.4 0.047 20.8 0.376
-97.4
5.0 0.790
-168.3
3.179
46.1 0.050 15.7 0.370 -107.9
6.0 0.774
178.5
2.801
29.3 0.054 10.8 0.342 -125.3
7.0 0.759
163.9
2.490
12.5 0.059 5.2 0.347 -144.3
8.0 0.746
149.9
2.220
-3.8 0.063 -0.7 0.371 -162.5
9.0 0.758
128.8
1.951
-20.5
0.068 -6.2 0.391 -166.2
10.0 0.777 114.8 1.754
-35.9 0.074 -14.2 0.383 -175.9
11.0 0.768 109.9 1.668
-51.1 0.086 -22.8 0.388
159.4
12.0 0.740 102.0 1.596
-66.9 0.099 -32.3 0.418
142.6
13.0 0.740 85.1 1.485
-82.4 0.114 -41.9 0.395
137.7
14.0 0.753 69.4 1.405
-98.6 0.132 -54.5 0.343
122.3
15.0 0.737 57.8 1.342 -117.8 0.156 -69.8 0.382
92.6
16.0 0.718 45.9 1.274 -136.3 0.187 -84.3 0.411
75.2
17.0 0.722 34.0 1.245 -152.8 0.232 -98.1 0.356
68.9
18.0 0.703 22.0 1.211 -171.5 0.295
-114.7 0.310
53.3
19.0 0.657 10.6 1.164 168.6
0.379
-134.5 0.319
39.7
20.0 0.717 -1.0 1.174 147.8
0.514
-158.6 0.270
39.6
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