EFA120D
UPDATED
09/05/2006
Low Distortion GaAs Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised September 2006
Chip Thickness: 75
20 microns
All Dimensions In Micron
s
FEATURES
+28.0dBm TYPICAL OUTPUT POWER
19.5dB TYPICAL POWER GAIN AT 2GHz
0.5 X 1200 MICRON RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION AND PLATED HEAT SINK
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 30mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
Caution! ESD sensitive device.
SYMBOLS PARAMETERS/TEST
CONDITIONS MIN
TYP
MAX
UNIT
P
1dB
Output Power at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
26.0 28.0
28.0
dBm
G
1dB
Gain at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
18.0 19.5
14.5
dB
PAE
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=2GHz
45
%
Idss
Saturated Drain Current
Vds=3V, Vgs=0V
220
340
440
mA
Gm
Transconductance Vds=3V,
Vgs=0V
140 180
mS
Vp
Pinch-off Voltage
Vds=3V,Ids=3.4mA
-2.0
-3.5
V
BVgd
Drain Breakdown Voltage
Igd=1.2mA
-13
-15
V
BVgs
Source Breakdown Voltage
Igs=1.2mA
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
40
45
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V 8V
Vgs
Gate-Source Voltage
-5V -4V
Igsf
Forward Gate Current
5.4 mA
1.8 mA
Igsr
Reserve Gate Current
0.9 mA
0.3 mA
Pin
Input Power
25 dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C 175
o
C
Tstg
Storage Temperature
-65/175
o
C -65/175
o
C
Pt
Total Power Dissipation
3.3 W
3.3 W
Note:
1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EFA120D
UPDATED
09/05/2006
Low Distortion GaAs Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised September 2006
S-PARAMETERS
8V, 1/2 Idss
Freq
S11 S21 S12 S22
GHz Mag Ang Mag Ang Mag Ang Mag Ang
1 0.918
-74.7
9.820
134.4 0.031 52.7 0.290 -41.9
2 0.878 -117.1 6.762 108.7 0.043 33.4 0.240 -68.5
3 0.858
-141.0
4.898 92.3 0.046 27.4
0.223
-84.0
4 0.852
-156.5
3.781 80.0 0.047 23.7
0.226
-96.2
5 0.849 -167.9 3.041 69.8 0.046 21.4 0.243 -106.1
6 0.849 -176.5 2.558 60.8 0.047 22.4 0.261 -111.3
7 0.846
176.6
2.200 52.9 0.049 24.8
0.282
-117.3
8 0.848
170.3
1.925 45.2 0.049 23.7
0.306
-123.0
9 0.848
164.8
1.720 37.9 0.049 26.5
0.331
-128.9
10 0.851 159.9 1.538 31.0 0.052 28.2
0.354
-134.1
11 0.859 154.9 1.392 23.9 0.054 30.5
0.383
-140.2
12 0.860 151.1 1.261 17.5 0.056 32.3
0.416
-145.8
13 0.865 147.4 1.149 11.3 0.061 30.9
0.449
-151.0
14 0.870 144.0 1.053 5.3 0.065 33.5
0.480
-155.5
15 0.869 140.7 0.962 -0.6 0.068 32.0
0.511
-159.8
16 0.877 137.8 0.893 -6.1 0.073 33.3
0.538
-163.7
17 0.878 134.8 0.823 -11.1 0.079 32.4
0.564
-167.5
18 0.876 131.7 0.766 -16.2 0.085 32.2
0.586
-171.0
19 0.881 128.4 0.719 -21.4 0.093 31.5
0.599
-174.8
20 0.882 124.6 0.671 -26.2 0.103 30.0
0.611
-178.6
21 0.872 116.8 0.662 -33.0 0.116 25.9 0.605 176.8
22 0.875 113.1 0.618 -37.8 0.124 24.2 0.626 172.2
23 0.876 110.2 0.574 -41.6 0.132 22.4 0.637 166.9
24 0.878 107.5 0.524 -45.6 0.141 21.3 0.662 161.9
25 0.876 105.0 0.482 -48.6 0.150 20.4 0.701 156.7
26 0.878 103.0 0.442 -51.6 0.163 17.3 0.714 151.8
Note:
The data included 0.7 mils diameter Au bonding wires:
1 gate wires, 15 mils each; 2 drain wires, 12 mils each; 4 source wires, 7 mils each.
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