EFA240D-CP083
UPDATED
06/13/2006
Low Distortion GaAs Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised June 2006
.050
.075
.015
.200
.220
.2900.005
.0080.001
.010 MAX
.160
.096
2X .065
All Dimensions in Inches
FEATURES
NON-HERMETIC SURFACE MOUNT
160MIL METAL CERAMIC PACKAGE
+30.5dBm OUTPUT POWER
17.0 dB TYPICAL POWER GAIN AT 2 GHz
0.5x2400
MICRON
RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE PROVIDES
HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
Caution! ESD sensitive device.
SYMBOL PARAMETER/TEST
CONDITIONS MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression
f = 2.0 GHz
Vds = 8 V, Ids=50% Idss
f = 4.0 GHz
29.0
30.5
30.5
dBm
G
1dB
Gain at 1dB Compression
f = 2.0 GHz
Vds = 8 V, Ids=50% Idss f = 4.0 GHz
15.5
17.0
12.0
dB
PAE
Power Added Efficiency at 1dB Compression
Vds = 8 V, Ids=50% Idss
f = 2.0 GHz
40 %
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
400
680
880
mA
G
M
Transconductance
V
DS
= 3 V, V
GS
= 0 V
280
360
mS
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 6 mA
-2.0
-3.5
V
BV
GD
Drain Breakdown Voltage I
GD
= 2.4 mA
-13
-15
V
BV
GS
Source Breakdown Voltage
I
GS
= 2.4 mA
-7
-14
V
R
TH
*
Thermal Resistance
25
30
o
C/W
Notes: * Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
10V 8V
Vgs
Gate-Source Voltage
-5V -4V
Igsf
Forward Gate Current
10.8 mA
3.6 mA
Igsr
Reverse Gate Current
-1.8 mA
-0.6 mA
Pin
Input Power
27 dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C 175
o
C
Tstg
Storage Temperature
-65/175
o
C -65/175
o
C
Pt
Total Power Dissipation
5.0W 5.0W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
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