Excelics
EFA480C
DATA SHEET
Low Distortion GaAs Power FET
+34.0dBm TYPICAL OUTPUT POWER
18.0dB TYPICAL POWER GAIN AT 2GHz
0.5 X 4800 MICRON RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION AND PLATED HEAT SINK
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 80mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS PARAMETERS/TEST
CONDITIONS MIN
TYP
MAX
UNIT
P
1dB
Output Power at 1dB Compression f= 2GHz
Vds=8V, Ids=50% Idss f= 4GHz
32.0 34.0
34.0
dBm
G
1dB
Gain at 1dB Compression f= 2GHz
Vds=8V, Ids=50% Idss f= 4GHz
16.0 18.0
12.5
dB
PAE
Gain at 1dB Compression
Vds=8V, Ids=50% Idss f= 2GHz
40
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
800
1360
1760
mA
Gm
Transconductance Vds=3V, Vgs=0V
560
720
mS
Vp
Pinch-off Voltage Vds=3V, Ids=10mA
-2.0
-3.5
V
BVgd
Drain Breakdown Voltage Igd=4.8mA
-12
-15
V
BVgs
Source Breakdown Voltage Igs=4.8mA
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
12
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS PARAMETERS ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
Ids
Drain Current
Idss
1.2A
Igsf
Forward Gate Current
120mA
20mA
Pin
Input Power
32dBm
@3dB Compression
Tch
Channel Temperature
175
o
C
150
o
C
Tstg
Storage Temperature
-65/175
o
C
-65/150
o
C
Pt
Total Power Dissipation
11.4 W
9.5 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Chip Thickness: 75
13 microns
All Dimensions In Microns
680
104
160
620
72
155
75
100
94
120
D
D
G
G
S
S
S
EFA480C
DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
0.500 0.944 -119.8 9.669 115.5 0.023 33.8 0.515 -166.9
1.000 0.931 -149.2 5.352 97.6 0.026 24.2 0.553 -172.1
1.500 0.928 -161.0 3.646 88.3 0.027 23.1 0.564 -174.0
2.000 0.927 -167.6 2.756 81.6 0.027 24.4 0.569 -175.0
2.500 0.927 -172.0 2.213 75.9 0.028 26.6 0.574 -175.4
3.000 0.927 -175.4 1.849 70.7 0.029 29.2 0.580 -175.7
3.500 0.928 -178.1 1.587 66.0 0.030 31.9 0.585 -175.9
4.000 0.928 179.6 1.389 61.4 0.031 34.6 0.591 -176.0
4.500 0.929 177.5 1.235 57.0 0.032 37.2 0.597 -176.1
5.000 0.930 175.6 1.112 52.8 0.034 39.6 0.604 -176.3
5.500 0.931 173.9 1.010 48.7 0.035 41.9 0.612 -176.5
6.000 0.932 172.3 0.925 44.7 0.037 44.1 0.620 -176.7
6.500 0.933 170.7 0.853 40.8 0.039 46.0 0.628 -176.9
7.000 0.934 169.2 0.790 37.0 0.040 47.8 0.636 -177.2
7.500 0.935 167.7 0.735 33.3 0.042 49.4 0.645 -177.5
8.000 0.937 166.3 0.687 29.7 0.044 50.8 0.654 -177.9
8.500 0.938 164.9 0.643 26.2 0.047 52.1 0.664 -178.3
9.000 0.939 163.6 0.604 22.8 0.049 53.2 0.673 -178.8
9.500 0.941 162.3 0.569 19.5 0.051 54.1 0.683 -179.4
10.000 0.942 160.9 0.537 16.2 0.054 54.9 0.693 -179.9
Note: The data included 0.7 mils diameter Au bonding wires:
2 gate wires, 20 mils each; 2 drain wires, 12 mils each; 6 source wires, 7 mils each.
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