EFA960CR-180F
ISSUED
05/11/2006
Low Distortion GaAs Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised May 2006
FEATURES
Non-Hermetic 180mil Metal Flange Package
+36.5 dBm Typical Output Power
16.0 dB Typical Power Gain at 2GHz
0.5 x 9600 Micron Recessed "Mushroom" Gate
Si
3
N
4
Passivation
Advanced Epitaxial Heterojunction Profile
Provides High Power Efficiency, Linearity
and Reliability
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
Caution! ESD sensitive device.
SYMBOL PARAMETERS/TEST
CONDITIONS
1
MIN
TYP
MAX
UNITS
35.0 36.5
P
1dB
Output Power at 1dB Compression f = 2GHz
V
DS
= 8 V, I
DS
50% I
DSS
f = 4GHz
36.5
dBm
14.5 16.0
G
1dB
Gain at 1dB Compression f = 2GHz
V
DS
= 8 V, I
DS
50% I
DSS
f = 4GHz
11.0
dB
PAE
Power Added Efficiency at 1dB Compression
V
DS
= 8 V, I
DS
50% I
DSS
f = 2GHz
34 %
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
1600
2720
3520
mA
G
M
Transconductance
V
DS
= 3 V, V
GS
= 0 V
1100
1450
mS
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 28 mA
-2.0
-3.5
V
BV
GD
Drain Breakdown Voltage
I
GD
= 9.6 mA
-13
-15
V
BV
GS
Source Breakdown Voltage
I
GS
= 9.6 mA
-7
-14
V
R
TH
Thermal
Resistance
6*
o
C/W
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V 8V
Vgs
Gate-Source Voltage
-5V -3V
Igsf
Forward Gate Current
43.2 mA
14.4 mA
Igsr
Reversed Gate Current
-7.2 mA
-2.4 mA
Pin
Input Power
33 dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C 175
o
C
Tstg
Storage Temperature
-65/175
o
C -65/175
o
C
Pt
Total Power Dissipation
23 W
23 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EFA960CR-180F
ISSUED
05/11/2006
Low Distortion GaAs Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised May 2006
S-PARAMETERS
VDS = 8 V, IDS 50% IDSS
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.5 0.976
-158.7
5.862 93.1 0.010 22.1 0.822 179.7
1.0
0.971
-176.4
3.028
77.0
0.012
22.3
0.808
176.5
1.5 0.948 176.1 2.702 69.3 0.018 26.4 0.743 169.2
2.0
0.934
168.5
2.132
60.0
0.021
27.2
0.733
167.2
2.5 0.929 162.1 1.853 51.1 0.025 26.9 0.704 165.4
3.0
0.908
155.3
1.736
41.5
0.030
24.1
0.671
163.3
3.5 0.893 146.5 1.728 29.7 0.038 18.8 0.626 158.0
4.0
0.868
134.3
1.740
14.9
0.047
7.8
0.562
149.5
4.5 0.847 119.2 1.751 -2.0 0.056 -3.7 0.503 136.4
5.0
0.835
101.9
1.735
-20.3
0.065
-17.5
0.453
119.1
5.5
0.830
84.3
1.700
-38.6 0.074 -31.2 0.415 100.0
6.0
0.823
65.8
1.661
-57.7
0.083
-46.7
0.389
79.4
6.5
0.807
46.7
1.632
-77.4
0.089
-63.4
0.391
59.1
7.0
0.807
21.5
1.603
-100.2
0.096
-81.6
0.386
35.4
7.5
0.824
-7.2
1.473
-124.5
0.095
-101.8
0.420
7.6
8.0
0.851
-33.9
1.259
-147.7
0.087
-119.4
0.481
-17.7
8.5
0.882
-54.9
1.047
-167.0
0.078
-136.7
0.574
-36.3
9.0
0.901
-74.3
0.876
174.5
0.066
-146.5
0.660
-47.1
9.5 0.890 -88.9 0.733 160.0 0.072 -158.3 0.659 -54.7
10.0
0.893
-104.2
0.666
144.8
0.068
-177.5
0.673
-64.4
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