EFA960CR-CP083
UPDATED
05/19/2006
Low Distortion GaAs Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised May 2006
.050
.075
.015
.200
.220
.2900.005
.0080.001
.010 MAX
.160
.096
2X .065
All Dimensions in Inches
FEATURES
NON-HERMETIC SURFACE MOUNT
160MIL METAL CERAMIC PACKAGE
+36.0dBm OUTPUT POWER
15.5 dB TYPICAL POWER GAIN AT 2 GHz
0.5x9600
MICRON
RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION PROFLIE
PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH
RELIABILITY
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
Caution! ESD sensitive device.
SYMBOL PARAMETER/TEST
CONDITIONS MIN
TYP
MAX
UNITS
P
1dB
Output Power at 1dB Compression
f = 2.0 GHz
Vds = 8 V, Ids=50% Idss
f = 4.0 GHz
34.5
36.0
36.0
dBm
G
1dB
Gain at 1dB Compression
f = 2.0 GHz
Vds = 8 V, Ids=50% Idss f = 4.0 GHz
14.0
15.5
10.5
dB
PAE
Power Added Efficiency at 1dB Compression
Vds = 8 V, Ids=50% Idss
f = 2.0 GHz
30 %
I
DSS
Saturated Drain Current
V
DS
= 3 V, V
GS
= 0 V
1600
2720
3520
mA
G
M
Transconductance
V
DS
= 3 V, V
GS
= 0 V
1100
1450
mS
V
P
Pinch-off Voltage
V
DS
= 3 V, I
DS
= 27 mA
-2.0
-3.5
V
BV
GD
Drain Breakdown Voltage I
GD
= 9.6 mA
-13
-15
V
BV
GS
Source Breakdown Voltage
I
GS
= 9.6 mA
-7
-14
V
R
TH
*
Thermal Resistance
6*
o
C/W
Notes: * Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
O
C
SYMBOLS PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
10V 8V
Vgs
Gate-Source Voltage
-5V -4V
Igsf
Forward Gate Current
43.2 mA
14.4 mA
Igsr
Reverse Gate Current
-7.2 mA
-2.4 mA
Pin
Input Power
33 dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C 175
o
C
Tstg
Storage Temperature
-65/175
o
C -65/175
o
C
Pt
Total Power Dissipation
23 W
23 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EFA960CR-CP083
UPDATED
05/19/2006
Low Distortion GaAs Power FET
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised May 2006
S-PARAMETERS
8V, 1/2 Idss
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
0.5 0.983 -155.2 6.432
94.5 0.012
24.2 0.810 178.8
1.0 0.986 -175.0 3.285
76.9 0.013
25.8 0.779 175.0
1.5 0.936 174.1 2.855
68.2 0.020
29.5 0.739 168.6
2.0 0.929 166.2 2.194
58.4 0.023
29.4 0.736 164.9
2.5 0.923 160.3 1.835
49.4 0.026
29.6 0.725 161.7
3.0 0.920 154.5 1.643
40.4 0.031
28.3 0.703 158.0
3.5 0.912 147.2 1.532
30.1 0.038
24.5 0.679 152.7
4.0 0.898 138.0 1.466
18.3 0.045
17.6 0.656 145.7
4.5 0.888 126.1 1.402
5.2 0.052
9.6 0.634 136.8
5.0 0.879 113.1 1.339
-8.7 0.059
0.6 0.624 127.2
5.5 0.870 99.9 1.271
-22.4 0.066
-9.4 0.621 117.7
6.0 0.862 87.6 1.212
-35.9 0.073
-19.0 0.609 108.0
6.5 0.860 75.1 1.176
-46.6 0.081
-25.3 0.571 104.6
7.0 0.841 63.8 1.194
-59.9 0.095
-34.5 0.560
92.9
7.5 0.829 48.5 1.217
-77.1 0.110
-48.8 0.543
75.7
8.0 0.828 28.5 1.171
-96.3 0.118
-65.3 0.532
55.1
8.5 0.849 8.2 1.060 -115.1 0.122
-80.8 0.555
33.4
9.0 0.872 -8.9 0.921 -132.2 0.117
-97.3 0.606
15.9
9.5 0.884 -21.1 0.794 -145.7 0.111 -109.9 0.623
4.5
10.0 0.891 -31.7 0.734 -153.5 0.115 -118.2 0.679
0.5
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