Excelics
EFB025A
PRELIMINARY DATA SHEET
General Purpose GaAs FET
+18.5dBm TYPICAL OUTPUT POWER
11.0dB TYPICAL POWER GAIN AT 12GHz
TYPICAL 1.3 dB NOISE FIGURE AND 11 dB ASSOCIATED
GAIN AT 12GHz
0.3 X 250 MICRON RECESSED "MUSHROOM" GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 5mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP
MAX
UNIT
Output Power at 1dB Compression f=12GHz
18.5
P
1dB
Vds=6V, Ids=50% Idss f=18GHz
17
18.5
dBm
Gain at 1dB Compression f=12GHz
11
G
1dB
Vds=6V, Ids=50% Idss f=18GHz
9
9
dB
NF
Noise Figure Vds=3V,Ids=15mA f=12GHz
1.3
dB
G
A
Associated Gain Vds=3V,Ids=15mA f=12GHz
11
dB
Idss
Saturated Drain Current Vds=3V, Vgs=0V
35
65
105
mA
Gm
Transconductance Vds=3V, Vgs=0V
40
60
mS
Vp
Pinch-off Voltage Vds=3V, Ids=1.0mA
-1.5
-3.0
V
BVgd
Drain Breakdown Voltage Igd=100uA
-5.5
-8.5
V
BVgs
Source Breakdown Voltage Igs=100uA
-5.5
-8.5
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
155
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
10V
6V
Vgs
Gate-Source Voltage
-6V
-4V
Ids
Drain Current
Idss
Idss
Igsf
Forward Gate Current
6mA
1mA
Pin
Input Power
16dBm
@ 3dB Compression
Tch
Channel Temperature
175
o
C
150
o
C
Tstg
Storage Temperature
-65/175
o
C
-65/150
o
C
Pt
Total Power Dissipation
880mW
730mW
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Chip Thickness: 75
13 microns
All Dimensions In Microns
50
48
50
40
59
78
104
420
260
90
D
D
G
G
S
S
EFB025A
PRELIMINARY DATA SHEET
General Purpose GaAs FET
S-PARAMETERS
6V,Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.959 -15.7 5.152 166.7 0.018 62.0 0.655 -6.9
2.0 0.938 -30.7 5.002 155.2 0.034 62.8 0.640 -15.2
3.0 0.912 -44.3 4.745 144.2 0.048 57.5 0.628 -24.3
4.0 0.886 -56.8 4.460 134.8 0.060 52.3 0.609 -28.9
5.0 0.867 -68.2 4.277 126.5 0.071 48.0 0.580 -34.2
6.0 0.823 -78.5 3.995 116.6 0.078 41.7 0.563 -45.7
7.0 0.808 -87.9 3.699 108.9 0.084 36.8 0.565 -48.7
8.0 0.795 -97.9 3.543 102.3 0.091 32.9 0.515 -49.9
9.0 0.769 -107.9 3.371 93.9 0.097 27.4 0.469 -60.5
10.0 0.749 -115.8 3.140 86.7 0.098 22.5 0.470 -67.9
11.0 0.743 -124.1 2.971 80.1 0.100 19.3 0.444 -71.6
12.0 0.727 -131.1 2.771 73.4 0.101 15.5 0.440 -79.6
13.0 0.731 -137.8 2.613 68.3 0.101 12.7 0.439 -77.4
14.0 0.738 -145.6 2.541 61.9 0.105 9.2 0.352 -83.7
15.0 0.705 -152.3 2.364 54.0 0.103 4.2 0.387 -108.7
16.0 0.705 -155.6 2.141 50.7 0.098 4.6 0.490 -99.8
17.0 0.731 -160.8 2.122 47.6 0.103 4.6 0.412 -85.9
18.0 0.719 -168.3 2.091 39.2 0.107 -0.7 0.327 -116.4
19.0 0.694 -171.2 1.896 34.1 0.102 -2.3 0.473 -122.7
20.0 0.708 -173.8 1.834 33.0 0.104 -0.9 0.472 -103.1
21.0 0.716 -177.8 1.894 27.1 0.114 -3.0 0.328 -115.7
22.0 0.696 176.6 1.782 19.6 0.111 -6.9 0.406 -140.1
23.0 0.693 172.5 1.673 15.8 0.110 -7.4 0.431 -134.3
24.0 0.692 168.0 1.653 10.2 0.113 -8.9 0.401 -147.1
25.0 0.687 163.5 1.531 4.4 0.109 -10.7 0.473 -156.4
26.0 0.710 160.7 1.520 0.4 0.113 -11.1 0.439 -150.6
Note: The data included 0.7 mils diameter Au bonding wires:
2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 4 source wires, 7 mils each.
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